Dielectric function of hexagonal AlN films determined by spectroscopic ellipsometry in the vacuum-uv spectral range

1999 ◽  
Vol 59 (3) ◽  
pp. 1845-1849 ◽  
Author(s):  
T. Wethkamp ◽  
K. Wilmers ◽  
C. Cobet ◽  
N. Esser ◽  
W. Richter ◽  
...  
Keyword(s):  
Dielectric Function ◽  
Spectral Range ◽  
Spectroscopic Ellipsometry ◽  
Vacuum Uv

The Study of Damage Profile of Ion Implanted Layer on Si by Spectroscopic Ellipsometry

1982 ◽  
Vol 14 ◽  
Author(s):  
Jinshen Luo ◽  
P.J. Mc Marr ◽  
K. Vedam
Keyword(s):  
Dielectric Function ◽  
Spectral Range ◽  
Spectroscopic Ellipsometry ◽  
Ion Implanted

ABSTRACTWe have determined the dielectric function of silicon samples which were implanted with 100-150 KeV P, As, Si ions to doses of 2·1014-1·1016cm−2, by a rotating analyser Automated ellipsometer in the spectral range 1.77− 4.59 eV. These data have been analyzed using a simplified three layer model.The results are compared with an earlier ellipsometric investigation [2].

IR-VUV Dielectric Function of Al1−xInxN determined by Spectroscopic Ellipsometry

2000 ◽  
Vol 639 ◽  
Author(s):  
A. Kasic ◽  
M. Schubert ◽  
B. Rheinländer ◽  
J. Off ◽  
F. Scholz ◽  
...  
Keyword(s):  
Dielectric Function ◽  
Spectral Range ◽  
Spectroscopic Ellipsometry ◽  
Vacuum Ultraviolet ◽  
Phonon Mode ◽  
Film Growth ◽  
Mode Frequency ◽  
Buffer Layers ◽  
Mid Infrared ◽  
Theoretical Predictions

ABSTRACTSpectroscopic Ellipsometry from the mid-infrared (mid-ir) to the vacuum-ultraviolet (vuv) spectral range (350 cm−1 … 8.8 eV) is used to study the optical properties of hexagonal MOVPE-grown Al1−xInxN films for 0.11 ≤ × ≤ 0.21. The AlInN E1(TO) phonon shows a onemode behavior in contrast to recent theoretical predictions [H. Grille, Ch. Schnittler, and F. Bechstedt, Phys. Rev. B 61, 6091 (2000)]. Approximately 120 nm thick Al1−xInxN films grown on slightly compressively strained hexagonal GaN buffer layers reveal the influence of in-plane strain on the E1(TO) phonon mode frequencies. Al1−xInxN deposited directly on [0001] sapphire substrate possesses E1(TO) mode frequency which indicate fully relaxed film growth. For highquality Al0.890In0.110N one A1(LO) phonon mode was observed. Furthermore, we present the complex dielectric function of hexagonal Al0.872In0.128N from the mid-ir to vuv spectral range.

From Semiconductor to Metal in a Flash: Observing Ultrafast Laser-Induced Phase Transformations

1997 ◽  
Vol 481 ◽  
Author(s):  
J. P. Callan ◽  
A. M.-T. Kim ◽  
L. Huangt ◽  
E. N. Glezer ◽  
E. Mazur
Keyword(s):  
Phase Transformations ◽  
Dielectric Function ◽  
Spectral Range ◽  
Laser Excitation ◽  
Spectroscopic Technique ◽  
Ultrafast Laser ◽  
Lattice Heating ◽  
Fs Laser

ABSTRACTWe use a new broadband spectroscopic technique to measure ultrafast changes in the dielectric function of a material over the spectral range 1.5–3.5 eV following intense 70-fs laser excitation. The results reveal the nature of the phase transformations which occur in the material following excitation. We studied the response of GaAs and Si. For GaAs, there are three distinct regimes of behavior as the pump fluence is increased — lattice heating, lattice disordering, and a semiconductor-to-metal transition.

Dielectric function of thin polypyrrole and Prussian blue films by spectroscopic ellipsometry

1983 ◽  
Vol 6 ◽  
pp. 309-316 ◽  
Author(s):  
H. Arwin ◽  
D.E. Aspnes ◽  
R. Bjorklund ◽  
I. Lundström
Keyword(s):  
Prussian Blue ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry

Femtosecond-time-resolved imaging of the dielectric function of ZnO in the visible to near-IR spectral range

2019 ◽  
Vol 115 (21) ◽  
pp. 212103 ◽  
Author(s):  
O. Herrfurth ◽  
T. Pflug ◽  
M. Olbrich ◽  
M. Grundmann ◽  
A. Horn ◽  
...  
Keyword(s):  
Dielectric Function ◽  
Spectral Range ◽  
Time Resolved ◽  
Near Ir ◽  
Time Resolved Imaging

Dielectric function of ZnTe nanocrystals by spectroscopic ellipsometry

2009 ◽  
Vol 20 (30) ◽  
pp. 305702 ◽  
Author(s):  
F Ahmed ◽  
A En Naciri ◽  
J J Grob ◽  
M Stchakovsky ◽  
L Johann
Keyword(s):  
Dielectric Function ◽  
Spectroscopic Ellipsometry

Measurement of the dielectric function spectra of low dielectric constant using the spectroscopic ellipsometry

2003 ◽  
Author(s):  
Masahiro Horie ◽  
Kamil Postava ◽  
Tomuo Yamaguchi ◽  
Kumiko Akashika ◽  
Hideki Hayashi ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Low Dielectric Constant ◽  
Low Dielectric

Spectroscopic Ellipsometry as a Potential In-Line Optical Metrology Tool For Relative Porosity Measurements of Low- K Dielectric Films

2001 ◽  
Vol 697 ◽  
Author(s):  
N.V. Edwards ◽  
J. Vella ◽  
Q. Xie ◽  
S. Zollner ◽  
D. Werho ◽  
...  
Keyword(s):  
Optical Properties ◽  
Spectral Range ◽  
Spectroscopic Ellipsometry ◽  
Optical Metrology ◽  
Dielectric Films ◽  
Electron Densities ◽  
Organosilicate Glass ◽  
Relative Porosity ◽  
Low K ◽  
Porosity Measurements

AbstractThe optical properties of organosilicate glass (OSG) samples were investigated with spectroscopic ellipsometry. We found that samples with dramatically higher hardness had higher indices of refraction (RI) and thus higher electron densities and lower relative porosities than films with lower hardnesses. The reverse was true for films with low hardnesses. As well, these films did not have the same optical properties as porous SiO2 across the spectral range measured, which we show has significant implications for the in-line optical metrology of these materials.

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