Chemical Vapor Deposition of Ultrafine Ceramic Structures

1988 ◽  
Vol 132 ◽  
Author(s):  
B. M. Gallois ◽  
R. Mathur ◽  
S. R. Lee ◽  
J. Y. Yoo
Keyword(s):  
Composite Coatings ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Carbon Films ◽  
Rf Plasma ◽  
Subgrain Structure ◽  
Ultrafine Grained ◽  
Vapor Liquid Solid Mechanism ◽  
Hydrogen Mixtures

ABSTRACTUltrafine ceramic structures based on the nitrides and carbides of titanium and silicon have been synthesized in a computer-controlled hot-wall CVD reactor. Layered deposits have been produced by pulsing the reactant gases judiciously under software control. The development of a columnar structure which is endemic to most CVD materials has been suppressed. Skeletal structures of filaments have also been grown with appropriate catalysts by the vapor-liquid-solid mechanism and immediately infiltrated in situ with different materials to produce filament-reinforced composite coatings.Ultrafine-grained carbon films and filaments have been grown from methane-hydrogen mixtures by RF plasma-assisted CVD. The microstructural features of these materials are of the order of 20 to 100 nm. The subgrain structure determined by Raman spectroscopy varies from 2 to 3 nm.

Preparation and Characterization of Chromium Containing amorphous Hydrogenated Carbon Films (A-C:H/Cr)

1995 ◽  
Vol 388 ◽  
Author(s):  
R. Gampp ◽  
P. Gantenbein ◽  
P. Oelhafen
Keyword(s):  
Chromium Carbide ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Rf Plasma ◽  
Silicon Substrates ◽  
Amorphous Hydrogenated Carbon ◽  
High Chemical Stability

AbstractChromium containing amorphous hydrogenated carbon films (a-C:H/Cr) were prepared in a process that combines rf plasma activated chemical vapor deposition of methane and magnetron sputtering of a chromium target. During the deposition the silicon substrates were kept at 200°C and dc biased at -200 V in order to obtain films with high chemical stability which is required for the application as solar selective surfaces. the films with different Cr concentrations (5 to 49 at.%) were characterized by in situ x-ray photoelectron spectroscopy (XPS). Up to 40 at.%, chromium proves to be built into the cermet-like films in the form of chromium carbide clusters. above 40 at.%, chromium is partly metallic. a modification of the a-C:H matrix in the vicinity of the chromium carbide clusters has been observed.

OPTICAL PROPERTIES OF TRIMETHYLBORON AND NITROGEN CODOPED AMORPHOUS CARBON FILMS

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1096-1100 ◽  
Author(s):  
Y. HAYASHI ◽  
S. ISHIKAWA ◽  
T. SOGA ◽  
T. JIMBO ◽  
M. ADACHI ◽  
...  
Keyword(s):  
Optical Properties ◽  
Amorphous Carbon ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Rf Plasma ◽  
Amorphous Carbon Films ◽  
Fabry Perot ◽  
Pl Emission ◽  
Hydrogenated Amorphous

We report on the efficient photoluminescence (PL) and optical properties of hydrogenated amorphous carbon thin films codoped with nitrogen and trimethylboron (TMB) grown by rf plasma-enhanced chemical vapor deposition at room temperature. The study clearly shows the observation of discrete PL emission peaks. The PL intensity of the film deposited with 20 sccm TMB is more than 103 times than that of the film deposited without TMB. The change of optical bandgap and PL emission energy with TMB flow rate are discussed based on sp3 and sp2 C networks. Angular dependence of the PL spectra revealed that the origin of multiple sharp peaks is due to Fabry-Perot cavity interference effect.

Chemical vapor deposition of carbon films: in-situ plasma diagnostics

Carbon ◽  
2003 ◽  
Vol 41 (4) ◽  
pp. 836-839 ◽  
Author(s):  
A.N. Obraztsov ◽  
A.A. Zolotukhin ◽  
A.O. Ustinov ◽  
A.P. Volkov ◽  
Yu.P. Svirko
Keyword(s):  
Chemical Vapor Deposition ◽  
Plasma Diagnostics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Films

Photoelectron Emission Study of Hydrogenated Amorphous Carbon Films Prepared by RF Plasma Chemical Vapor Deposition

1991 ◽  
Vol 30 (Part 2, No. 5B) ◽  
pp. L924-L926 ◽  
Author(s):  
Masatoshi Nakayama ◽  
Kunihiro Ueda ◽  
Masanori Shibahara ◽  
Kazunori Maruyama ◽  
Kiichiro Kamata
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Rf Plasma ◽  
Photoelectron Emission ◽  
Plasma Chemical ◽  
Amorphous Carbon Films ◽  
Plasma Chemical Vapor Deposition ◽  
Emission Study ◽  
Hydrogenated Amorphous

Thermally stimulated exoelectron emission from hydrogenated amorphous carbon films

1992 ◽  
Vol 7 (7) ◽  
pp. 1805-1808
Author(s):  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura ◽  
Shigekazu Hirayama ◽  
Yoshimasa Yamaguchi
Keyword(s):  
Stainless Steel ◽  
Amorphous Carbon ◽  
Stainless Steel Substrate ◽  
Steel Substrate ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Rf Plasma ◽  
Exoelectron Emission ◽  
Hydrogenated Amorphous Carbon ◽  
Hydrogenated Amorphous

Hydrogenated amorphous carbon (a–C:H) films on stainless steel (AISI430) substrate oxidized in air at 1273 K were prepared from a gas mixture of methane and hydrogen by an rf plasma chemical vapor deposition, and thermally stimulated exoelectron emission (TSEE) was studied for the x-ray irradiated a–C:H films. Glow curves and energy distributions of TSEE from the 80- and 280-nm a–C:H films and from the AISI430 substrate have been measured under ultrahigh vacuum conditions. It was found that the glow curve from the 80-nm a–C:H film was similar to that from the AISI430 substrate, but it was quite different from that from the 280-nm film; the values of the mean energy of exoelectrons at the glow peak temperatures from the 80-nm a–C:H film are almost the same as those from the substrate but are much lower than those of the 280-nm film. The surfaces of 80- and 280-nm a–C:H films are observed with the scanning electron microscope (SEM). Observations by SEM show that the 80-nm film has relatively large-sized clusters of films and the stainless steel substrate still appears in some places, but the surface of the 280-nm film is completely covered by the carbon films. From these results, we propose that TSEE from the 80-nm film originates mainly from the oxide films on the stainless steel substrate and TSEE from the 280-nm film originates from the film itself. Thus, TSEE can be applied to characterize the surface of thin films.

scholarly journals Evidence of Carboxyl Modification of Hydrogen-Free Diamond-Like Carbon Films Assisted by Radio Frequency Plasma in Vacuum

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Yuqi Xue ◽  
Zixin Wang ◽  
Jun Wang ◽  
Changji Hu ◽  
Fangyan Xie ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Carbon Films ◽  
Rf Plasma ◽  
Diamond Like Carbon ◽  
Spectra Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Frequency Plasma ◽  
Ft Ir

Modification of hydrogen-free diamond-like carbon (DLC) is presented, with acrylic acid (AA) vapor carried into a vacuum chamber by argon and with the in situ assistance of low-power radio frequency (RF) plasma at a temperature below 100°C. Measured by atomic force microscopy (AFM) technique, the roughness (Ra) of the DLC was 1.063±0.040 nm. XPS and FT-IR spectra analysis showed that carboxyl groups were immobilized on the surface of the DLC films, with about 40% of carboxyl group area coverage. It was found that the RF plasma and reaction time are important in enhancing the modification rate and efficiency.

Substrate Effect on the Diamond-Like Carbon Films Synthesized by RF Plasma Enhanced Chemical Vapor Deposition

2007 ◽  
Vol 539-543 ◽  
pp. 3574-3579 ◽  
Author(s):  
S.S. Tzeng ◽  
Wei Min Wu ◽  
J.S. Hsu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Films ◽  
The Self ◽  
Rf Plasma ◽  
Diamond Like Carbon ◽  
Working Pressure ◽  
Glass Substrates ◽  
Self Bias

Diamond-like carbon (DLC) films were synthesized by RF plasma enhanced chemical vapor deposition using methane as carbon source. Effect of substrate on the growth of DLC films was investigated by using four different substrate materials, silicon wafer (100), glass, flat-polished and mirror-polished alumina. The carbon films were deposited at four different self-bias voltages (-157 V, -403 V, -500 V and -590 V) by changing the plasma power under fixed flow rate and working pressure. Raman analyses indicated that DLC films were deposited on silicon and glass substrates at the self-bias -403 V ~ -590 V, and polymer-like carbon films were obtained at -157 V. For the alumina substrates, different Raman results were observed for flat-polished and mirror-polished alumina substrates. The hardness of DLC films, deposited on silicon and glass substrates at the self-bias -403 V ~ -590 V, was within 16~20 GPa using nanoindentation technique.

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