Surface Reaction Mechanisms in the Metallisation and Etching of Semiconductor Materials.

1988 ◽  
Vol 131 ◽  
Author(s):  
A Wee ◽  
A J Murrell ◽  
C L French ◽  
R J Price ◽  
R B Jackman ◽  
...  

ABSTRACTSurface spectroscopic techniques have been used to investigate aluminium deposition form tri-methyl aluminium (TMA) on Si(100), and the etching of InP by chlorine. Thermal reactions and processes stimulated by UV lamps and ion beams are examined. The results are interpreted in the light of the adsorption states which are formed and the surface transformations of chemical states which are observed to occur.

1990 ◽  
Vol 204 ◽  
Author(s):  
John S. Foord ◽  
Nagindar K. Singh ◽  
Andrew T.S. Wee ◽  
Cathy L. French ◽  
Emma T. Fitzgerald

ABSTRACTSurface reaction mechanisms which underly the growth of III-V semiconductors by chemical beam epitaxy have been investigated using a combination of surface spectroscopic techniques in conjunction with modulated molecular beam scattering techniques. Emphasis is placed on understanding the complex growth rate effects observed during the growth of Ga(Al,In)As and the origin of selected area epitaxy. These effects are shown to arise from the surface sensitive nature of the decomposition of the group III alkyl source chemicals used in CBE.


2006 ◽  
Vol 69 (8) ◽  
pp. 1366-1371 ◽  
Author(s):  
A. Di Pietro ◽  
P. Figuera ◽  
V. Scuderi ◽  
F. Amorini ◽  
C. Angulo ◽  
...  

2020 ◽  
Vol 22 (34) ◽  
pp. 19349-19358
Author(s):  
Zunrong Sheng ◽  
Hyun-Ha Kim ◽  
Shuiliang Yao ◽  
Tomohiro Nozaki

Abundant carbonate species are generated over lanthanum by vibrationally excited CO2, which increase adsorbed oxygen species fixation for surface reaction.


2003 ◽  
Vol 107 (46) ◽  
pp. 12721-12733 ◽  
Author(s):  
A. B. Mhadeshwar ◽  
H. Wang ◽  
D. G. Vlachos

Sign in / Sign up

Export Citation Format

Share Document