Surface Reaction Mechanisms in the Metallisation and Etching of Semiconductor Materials.
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ABSTRACTSurface spectroscopic techniques have been used to investigate aluminium deposition form tri-methyl aluminium (TMA) on Si(100), and the etching of InP by chlorine. Thermal reactions and processes stimulated by UV lamps and ion beams are examined. The results are interpreted in the light of the adsorption states which are formed and the surface transformations of chemical states which are observed to occur.
2006 ◽
Vol 69
(8)
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pp. 1366-1371
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2003 ◽
Vol 107
(46)
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pp. 12721-12733
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2004 ◽
Vol 120
(2)
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pp. 979-987
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1998 ◽
Vol 16
(6)
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pp. 3259-3265
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