Control and Variation of Stress in Pecvd SiNx Films on InP

1988 ◽  
Vol 130 ◽  
Author(s):  
J. Lopata ◽  
W. C. Dautremont-Smith ◽  
J. W. Lee
Keyword(s):  
Compressive Stress ◽  
High Frequency ◽  
Gas Flow ◽  
Plasma Reactor ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Flow Ratio ◽  
Deposition Parameters ◽  
Chemical Vapor Deposited ◽  
Gas Flow Ratio

AbstractStress in plasma enhanced chemical vapor deposited (PECVD) SiNx films on InP has been evaluated as a function of source gases (NH3 /SiH4 or N2/SiH4) and plasma operating frequency (high, » 1 MHz or low, « 1 MHz). All films were deposited at 300°C in the same parallel-plate, radial flow plasma reactor. Levels of stress in PECVD SiNx on InP within a continuous range from moderately high tensile (∼ 5 × 109 dyne cm−2) to very high compressive (2 × 1010 dyne cm−2 ) were obtained from appropriate choices of deposition parameters. Deposition from NH3/SiH4 at high frequency produces tensile stress, of magnitude increasing with NH3/SiH4 flow ratio. Deposition from N2/SiH4 at high frequency produces zero to low compressive stress. At low frequency compressive stress is always produced; for N2/SiH4 increasing the gas flow ratio from 25:1 to 500:1 reduces the compressive stress from 1.8 X 1010 to 7 × 108 dyne cm−2. The ability to vary the stress in a dielectric film of approximately constant chemical composition over such a broad range is beneficial for assessing the effects of stress on device performance.

Advances in the Characterization of Compositionally-graded Layers in Amorphous Semiconductor Solar Cells by Real Time Spectroellipsometry

1996 ◽  
Vol 420 ◽  
Author(s):  
R. W. Collins ◽  
Sangbo Kim ◽  
Joohyun Koh ◽  
J. S. Burnham ◽  
Lihong Jiao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Real Time ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Interface Layer ◽  
Open Circuit ◽  
Amorphous Semiconductor ◽  
Deposition Parameters ◽  
Gas Flow Ratio ◽  
Graded Layers

AbstractWe have developed a real time spectroellipsometry data analysis procedure that allows us to characterize compositionally- graded amorphous semiconductor alloy thin films prepared by plasma-enhanced chemical vapor deposition (PECVD). As an example, we have applied the analysis to obtain the depth-profile of the optical gap and alloy composition with ≤15 Å resolution for a hydrogenated amorphous silicon-carbon alloy (a-Si1−xCx:H) film prepared by continuously varying the gas flow ratio z=[CH4]/{[CH4]+[SiH4]} in the PECVD process. The graded layer has been incorporated at the p/i interface of widegap a-Si1−xCx:H (x∼0.05) p-i-n solar cells, and consistent improvements in open-circuit voltage have been demonstrated. The importance of the graded-layer characterization is the ability to relate improvements in device performance directly to the physical properties of the interface layer, rather to the deposition parameters with which they were prepared.

Dependence of PECVD Silicon Oxynitride Properties on Deposition Parameters

1988 ◽  
Vol 131 ◽  
Author(s):  
Aubrey L. Helms ◽  
Robert M. Havrilla
Keyword(s):  
Gas Flow ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Gas Flow Rate ◽  
Process Gas ◽  
Deposition Parameters ◽  
Chemical Vapor Deposited ◽  
Passivation Layers ◽  
Parallel Plate Reactor ◽  
Deposition Conditions

ABSTRACTThe properties of Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon oxynitride thin films were determined for a variety of deposition conditions. The films were characterized with respect to stress, refractive index, deposition rate, hydrogen content, dielectric constant, and uniformity. The films were deposited in an Electrotech ND6200 parallel plate reactor using a silane - ammonia - nitrous oxide process gas chemistry. Deposition parameters which were investigated include process gas flow rate, power, and total pressure. The possible application of these films as both inter-layer and final passivation layers for use on GaAs ICs will be discussed.

Effect of film chemistry on refractive index of plasma-enhanced chemical vapor deposited silicon oxynitride films: A correlative study

2008 ◽  
Vol 23 (5) ◽  
pp. 1433-1442 ◽  
Author(s):  
S. Naskar ◽  
S.D. Wolter ◽  
C.A. Bower ◽  
B.R. Stoner ◽  
J.T. Glass
Keyword(s):  
Refractive Index ◽  
Hydrogen Concentration ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Rf Plasma ◽  
Flow Ratio ◽  
Plasma Chemical Vapor Deposition ◽  
Gas Flow Ratio

Thick SiOxNy films were deposited by radiofrequency (rf) plasma chemical vapor deposition using silane (SiH4) and nitrous oxide (N2O) source gases. The influence of deposition conditions of gas flow ratio, rf plasma mixed-frequency ratio (100 kHz, 13.56 MHz), and rf power on the refractive index were examined. It was observed that the refractive index of the SiOxNy films increased with N and Si concentration as measured via x-ray photoelectron spectroscopy. Interestingly, a variation of refractive index with N2O:SiH4 flow ratio for the two drive frequencies was observed, suggesting that oxynitride bonding plays an important role in determining the optical properties. The two drive frequencies also led to differences in hydrogen concentration that were found to be correlated with refractive index. Hydrogen concentration has been linked to significant optical absorption losses above index values of ∼1.6, which we identified as a saturation level in our films.

OES Diagnostics of HMDSO/O2/CF4 Microwave Plasma for SiOCxFy Films Deposition

2011 ◽  
Vol 227 ◽  
pp. 152-155 ◽  
Author(s):  
Rayene Chabane ◽  
Salah Sahli ◽  
Azziz Zenasni ◽  
Patrice Raynaud ◽  
Yvan Segui
Keyword(s):  
Gas Flow ◽  
Optical Emission Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Microwave Plasma ◽  
Plasma Reactor ◽  
Optical Emission ◽  
Plasma Diagnostic ◽  
Flow Ratio ◽  
Gas Flow Ratio ◽  
Deposited Films

SiOF like films have been elaborated in microwave excited DECR plasma reactor (Distributed Electron Cyclotron Resonance) from a mixture of oxygen-hexamethyldisiloxane (HMDSO/O2) and CF4. The fluorine contents in the precursor mixture were adjusted by varying the CF4 gas flow ratio in the range of 10% - 70%. Optical emission spectroscopy (OES) and Fourier transform infrared (FTIR) have been used for the plasma diagnostic and the deposited films structure analysis, respectively. Actinometric technique was used to find trends in the concentrations of species present in the plasma. A large number of species have been detected, such as F, Si, O, C and H. Depending on the gas mixture composition, FTIR spectra revealed the presence of several chemical bonds such as Si-F and Si-O.

Fabrication of planar SiON optical waveguide and its characterization

2005 ◽  
Vol 891 ◽  
Author(s):  
Yu-Jeong Cho ◽  
Yeong-Cheol Kim
Keyword(s):  
Refractive Index ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Core Layer ◽  
Silicon Oxynitride ◽  
Flow Ratio ◽  
Cladding Layer ◽  
Gas Flow Ratio ◽  
Index Contrast ◽  
Optical Planar Waveguide

ABSTRACTSilicon oxynitride (SiON) was deposited as a core layer on a silica (SiO2) under-cladding layer by using plasma enhanced chemical vapor deposition (PECVD). The refractive index of the SiON core layer was varied between 1.45 and 1.78 by changing the gas flow ratio of SiH4, N2O and NH3. Etching experiments were performed using a dry etching equipment to fabricate the SiON core. An optical planar waveguide with a core and under-cladding thicknesses of 6 μm and 8 μm, respectively, and a refractive index contrast (Δn) of 7 % has been fabricated.

Field emission characteristics of carbon nanotubes synthesized by C3H4 and NH3 gases

2002 ◽  
Vol 727 ◽  
Author(s):  
Taewon Jeong ◽  
Jae Hee Han ◽  
Whikun Yi ◽  
SeGi Yu ◽  
Jeonghee Lee ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Field Emission ◽  
Gas Flow ◽  
Field Enhancement ◽  
Chemical Vapor ◽  
Emission Characteristics ◽  
Flow Ratio ◽  
Multiwalled Carbon ◽  
Turn On ◽  
Gas Flow Ratio

AbstractUsing a gas mixture of propyne (C3H4) and ammonia (NH3) as a carbon precursor, we have successfully synthesized multiwalled carbon nanotubes (CNTs) by the direct current (dc) plasma enhanced chemical vapor deposition (PECVD) onto Co-sputtered glass at 550°C. As the flow ratio of NH3 to C3H4 in the mixture gas increased, the crystallinity and alignment of CNTs were improved. In addition, the field emission characteristics of CNTs were also improved. the turn-on voltage became lower, and the current density and the field enhancement factor were more increasing. Raman spectroscopy and scanning electron microscopy were utilized to confirm the effect of the gas flow ratio on CNTs. Therefore, the gas flow ratio was found to be one of important factors to govern the crystalline and field emission characteristics of CNTs. The growth mechanism of CNTs using a C3H4 gas is under investigation with the possibility that three carbon atoms in a C3H4 molecule is converted directly to a hexagon of a CNT by combining two molecules.

Plasma Etching of SiO2 with CF3I Gas in Plasma-Enhanced Chemical Vapor Deposition Chamber for In-Situ Cleaning

2019 ◽  
Vol 11 (12) ◽  
pp. 1667-1672
Author(s):  
Jin-Seong Park ◽  
In-Sung Park ◽  
Seon Yong Kim ◽  
Taehoon Lee ◽  
Jinho Ahn ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Vapor Deposition ◽  
Etch Rate ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Chamber Pressure ◽  
Flow Ratio ◽  
Deposition Chamber ◽  
Gas Flow Ratio ◽  
Chamber Temperature

Non-global-warming CF3I gas has been investigated as a removal etchant for SiO2 film. Thermally fabricated SiO2 films were etched by the plasma generated with a gas mixture of CF3I and O2 (CF3I/O2) in the plasma-enhanced chemical vapor deposition chamber. The etch rate of SiO2 films was studied along with the process parameters of plasma etching such as chamber pressure, etching gas flow ratio of CF3I to CF3I/O2, plasma power, and chamber temperature. Increasing the chamber pressure from 400 to 1,000 mTorr decreased the etch rate of SiO2 film. The etch rate of this film showed a minimum value at a gas flow ratio of 0.71 in CF3I to CF3I/O2 and then increased at a higher CF3I gas flow ratio. In addition, the elevated plasma power increased the etch rate. However, the chamber temperature has little effect on the etch rate of SiO2 films. When only CF3I gas without O2 was supplied for etching, polymerized fluorocarbon was formed on the surface, indicating the role of oxygen in ashing the polymerized fluorocarbon during the etching process.

Hydrogen Concentration Analysis in Pecvd and Rtcvd Silicon Nitride Thin Films and It's Impact on Device Performance

2001 ◽  
Vol 664 ◽  
Author(s):  
C. Y. Wang ◽  
E. H. Lim ◽  
H. Liu ◽  
J. L. Sudijono ◽  
T. C. Ang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Threshold Voltage ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Gate Oxide ◽  
Nitride Film ◽  
Device Performance ◽  
Gas Flow Ratio ◽  
The Impact

ABSTRACTIn this paper the impact of the ESL (Etch Stop layer) nitride on the device performance especially the threshold voltage (Vt) has been studied. From SIMS analysis, it is found that different nitride gives different H concentration, [H] in the Gate oxide area, the higher [H] in the nitride film, the higher H in the Gate Oxide area and the lower the threshold voltage. It is also found that using TiSi instead of CoSi can help to stop the H from diffusing into Gate Oxide/channel area, resulting in a smaller threshold voltage drift for the device employed TiSi. Study to control the [H] in the nitride film is also carried out. In this paper, RBS, HFS and FTIR are used to analyze the composition changes of the SiN films prepared using Plasma enhanced Chemical Vapor deposition (PECVD), Rapid Thermal Chemical Vapor Deposition (RTCVD) with different process parameters. Gas flow ratio, RF power and temperature are found to be the key factors that affect the composition and the H concentration in the film. It is found that the nearer the SiN composition to stoichiometric Si3N4, the lower the [H] in SiN film because there is no excess silicon or nitrogen to be bonded with H. However the lowest [H] in the SiN film is limited by temperature. The higher the process temperature the lower the [H] can be obtained in the SiN film and the nearer the composition to stoichiometric Si3N4.

Heat Transfer in Chemical Vapor Deposited Optical Fiber Coatings

2001 ◽  
Author(s):  
Patricia O. Iwanik ◽  
Wilson K. S. Chiu
Keyword(s):  
Heat Transfer ◽  
Optical Fiber ◽  
Gas Flow ◽  
Convection Heat Transfer ◽  
Fiber Surface ◽  
Chemical Vapor ◽  
Temperature Changes ◽  
Flow And Heat Transfer ◽  
Chemical Vapor Deposited ◽  
Fiber Coatings

Abstract A fundamental understanding of how reactor parameters influence the fiber surface temperature is essential to manufacturing high quality optical fiber coatings by chemical vapor deposition (CVD). In an attempt to better understand this process, a finite volume model has been developed to study the gas flow and heat transfer of an optical fiber as it travels through a CVD reactor. This study showed that draw speed significantly affects fiber temperature inside the reactor, with temperature changes up to 45% observed under the conditions studied. Multiple heat transfer modes contribute to this phenomena, with convection heat transfer dominating the process.

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