Gold-Nickel Multilayer Films: Structure-Property Correlations

1988 ◽  
Vol 130 ◽  
Author(s):  
S. R. Nutt ◽  
K A. Green ◽  
S. P. Baker ◽  
W. D. Nix ◽  
A. Jankowski
Keyword(s):  
Small Variation ◽  
Multilayer Films ◽  
Structure Property ◽  
Depth Sensing ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Short Period ◽  
Indentation Tests ◽  
Diffraction Patterns ◽  
Growth Features

AbstractGold-nickel multilayer films with periods of 1.2 - 4.6 nm were deposited on silicon substrates by magnetron sputtering, and plan and cross-sectional specimens were examined by transmission electron microscopy. The cross-sectional specimens revealed well-defined layering and columnar growth features that extended through the film thickness. Dark striations extending normal to the layers were attributed to diffraction contrast from defect strain fields. Diffraction patterns showed that the films were highly textured and that short-period films had a single fcc structure, while long-period films separated into three fcc structures. High-resolution images of the layer interfaces showed local regions of epitaxy partitioned by regions of disorder.Indentation tests using a Nanoindenter, a depth-sensing indentation device, were performed to measure the elastic modulus and hardness of the films. No modulus enhancement was detected, and a small variation in hardness was measured.

Microstructural Studies of Sputtered Co90Fe10/Ag GMR Multilayers

1997 ◽  
Vol 475 ◽  
Author(s):  
J.D. Jarratt ◽  
T.J. Klemmer ◽  
J.A. Barnard
Keyword(s):  
Multilayer Films ◽  
X Ray Diffraction ◽  
Satellite Peak ◽  
Cross Sectional ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Columnar Grains ◽  
Diffraction Patterns ◽  
Microstructural Studies

ABSTRACTThe microstructure of Co90Feio/Ag giant magnetoresistive multilayer films has been investigated using x-ray diffraction (XRD) and cross-sectional transmission electron microscopy. Columnar grains with a (111) fiber growth texture is observed. A comparison is made between the observed layering structure and earlier multilayer schematics based on the literature and magnetic and magnetoresistive measurements as a function of layer thickness. A direct correlation is made between superlattice satellite peak signals from selected area electron diffraction patterns and XRD scans.

Observation of the Wurtzite Phase in OMVPE Grown ZnSe/GaAs: Effect on Implantation and Rapid Thermal Annealing

1989 ◽  
Vol 147 ◽  
Author(s):  
K. S. Jones ◽  
J. Yu ◽  
P. D. Lowen ◽  
D. Kisker
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electrical Transport ◽  
High Resistivity ◽  
Ion Milling ◽  
Electrical Transport Properties ◽  
Wurtzite Phase ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Diffraction Patterns

AbstractTransmission electron diffraction patterns of cross-sectional TEM samples of OMVPE ZnSe on GaAs indicate the existence of the hexagonal wurtzite phase in the epitaxial layers. The orientation relationship is (0002)//(111); (1120)//(220). Etching studies indicate the phase is internal not ion milling induced. The average wurtzite particle size is 80Å-120Å. Because of interplanar spacing matches it is easily overlooked. Electrical property measurements show a high resistivity (1010ω/square) which drops by four orders of magnitude upon rapid thermal annealing between 700°C and 900 °C for 3 sec. Implantation of Li and N have little effect on the electrical transport properties. The Li is shown to have a high diffusivity, a solid solubility of ≈1016/cm3 at 800°C and getters to the ZnSeA/aAs interface.

scholarly journals The Reliability Improvement of Cu Interconnection by the Control of Crystallizedα-Ta/TaNxDiffusion Barrier

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Wei-Lin Wang ◽  
Chia-Ti Wang ◽  
Wei-Chun Chen ◽  
Kuo-Tzu Peng ◽  
Ming-Hsin Yeh ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Practical Application ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Reliability Improvement ◽  
N Concentration ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Interconnection Structure

Ta/TaN bilayers have been deposited by a commercial self-ionized plasma (SIP) system. The microstructures of Ta/TaN bilayers have been systematically characterized by X-ray diffraction patterns and cross-sectional transmission electron microscopy. TaN films deposited by SIP system are amorphous. The crystalline behavior of Ta film can be controlled by the N concentration of underlying TaN film. On amorphous TaN film with low N concentration, overdeposited Ta film is the mixture ofα- andβ-phases with amorphous-like structure. Increasing the N concentration of amorphous TaN underlayer successfully leads upper Ta film to form pureα-phase. For the practical application, the electrical property and reliability of Cu interconnection structure have been investigated by utilizing various types of Ta/TaN diffusion barrier. The diffusion barrier fabricated by the combination of crystallizedα-Ta and TaN with high N concentration efficiently reduces the KRc and improves the EM resistance of Cu interconnection structure.

Microstructure and Mechanical Behavior of Magnetron Sputtered Al-Cu Films

1991 ◽  
Vol 226 ◽  
Author(s):  
Tsann Lin ◽  
V. Raman
Keyword(s):  
Mechanical Behavior ◽  
Grain Morphology ◽  
Depth Sensing ◽  
Cu Films ◽  
Sputtered Films ◽  
Fine Grain ◽  
Platelet Morphology ◽  
Transmission Electron ◽  
Indentation Tests ◽  
Substrate Temperatures

AbstractWe have investigated the microstructure, electrical resistivity and mechanical behavior of DC magnetron sputtered A1-4wt%Cu films. The substrate temperatures were varied systematically from room temperature to 500 °C. Scanning and transmission electron microscopy of the sputtered films show that the top surface of the films sputtered at low temperatures (< 200 °C) exhibits a pure Al-like fine grain morphology. In contrast, sputter deposition at higher temperatures (> 300 °C) produces films that are characterized at the top surface by a distribution of θ’-A12Cu precipitates with a platelet morphology. The mechanical behavior of the sputtered films were investigated by performing indentation tests using a depth-sensing technique.

scholarly journals Preparation of Porous F-WO3/TiO2Films with Visible-Light Photocatalytic Activity by Microarc Oxidation

2012 ◽  
Vol 2012 ◽  
pp. 1-9 ◽  
Author(s):  
Chung-Wei Yeh ◽  
Kee-Rong Wu ◽  
Chung-Hsuang Hung ◽  
Hao-Cheng Chang ◽  
Chuan-Jen Hsu
Keyword(s):  
Visible Light ◽  
Dye Degradation ◽  
Microarc Oxidation ◽  
Band Gap Energy ◽  
High Specific Surface Area ◽  
Cross Sectional ◽  
Porous Networks ◽  
Transmission Electron ◽  
Porous Microstructure ◽  
Diffraction Patterns

Porous F-WO3/TiO2(mTiO2) films are prepared on titanium sheet substrates using microarc oxidation (MAO) technique. The X-ray diffraction patterns show that visible-light (Vis) enabling mTiO2films with a very high content of anatase TiO2and high loading of WO3are successfully synthesized at a low applied voltage of 300 V using electrolyte contenting NaF and Na2WO4without subsequent heat treatment. The cross-sectional transmission electron microscopy micrograph reveals that the mTiO2films feature porous networks connected by many micron pores. The diffused reflection spectrum displays broad absorbance across the UV-Vis regions and a significant red shift in the band gap energy (∼2.23 eV) for the mTiO2film. Owing to the high specific surface area from the porous microstructure, the mTiO2film shows a 61% and 50% rate increase in the photocatalytic dye degradation, as compared with the N,C-codoped TiO2films under UV and Vis irradiation, respectively.

Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate

Open Physics ◽  
2008 ◽  
Vol 6 (3) ◽  
Author(s):  
Hua Li ◽  
Jianping Sang ◽  
Chang Liu ◽  
Hongbing Lu ◽  
Juncheng Cao
Keyword(s):  
Interface Layer ◽  
Interfacial Microstructure ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Gan Heterostructure

AbstractSingle crystalline ZnO film is grown on GaN/sapphire (0001) substrate by molecular beam epitaxy. Ga2O3 is introduced into the ZnO/GaN heterostructure intentionally by oxygen-plasma pre-exposure on the GaN surface prior to ZnO growth. The crystalline orientation and interfacial microstructure are characterized by X-ray diffraction and transmission electron microscopy. X-ray diffraction analysis shows strong c-axis preferred orientation of the ZnO film. Cross-sectional transmission electron microscope images reveal that an additional phase is formed at the interface of ZnO/GaN. Through a comparison of diffraction patterns, we confirm that the interface layer is monoclinic Ga2O3 and the main epitaxial relationship should be $$ (0001)_{ZnO} \parallel (001)_{Ga_2 O_3 } \parallel (0001)_{GaN} $$ and $$ [2 - 1 - 10]_{ZnO} \parallel [010]_{Ga_2 O_3 } \parallel [2 - 1 - 10]_{GaN} $$.

Ordering In Zn0.5Fe0.5Se Epilayers Grown on InP Substrates by Molecular Beam Epitaxy

1991 ◽  
Vol 231 ◽  
Author(s):  
L. Salamanca Riba ◽  
K. Park ◽  
B. T. Jonker
Keyword(s):  
High Resolution ◽  
Ordered Structure ◽  
Cross Sectional ◽  
Zinc Blende ◽  
Transmission Electron ◽  
Lattice Images ◽  
High Resolution Images ◽  
Diffraction Patterns ◽  
Inp Substrates ◽  
Image Simulations

AbstractWe have observed an ordered structure in Zn0.5Fe0.5Se epilayers grown on (001) InP substrates using transmission electron microscopy. The ordered structure of Zn0.5Fe0.5Se has Fe atoms occupying the (0,0,0) and (½, ½, 0) sites and Zn atoms occupying the (0, ½, ½) and (½, 0, ½) sites in the zinc-blende unit cell. Ordering is observed in both electron diffraction patterns and cross-sectional high-resolution lattice images along the < 100 > and < 110 > directions. This ordered structure consists of alternating ZnSe and FeSe monolayers along the < 100 > and < 110 > directions. Computer image simulations of the high-resolution images under various thicknesses, and defocusing conditions have been obtained and are compared with those obtained experimentally.

Nanostructural characterizations of hydrogen-permselective Si–Co–O membranes by transmission electron microscopy

2009 ◽  
Vol 24 (2) ◽  
pp. 372-378 ◽  
Author(s):  
Shinji Fujisaki ◽  
Koji Hataya ◽  
Tomohiro Saito ◽  
Shigeo Arai ◽  
Yuji Iwamoto ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Gas Permeation ◽  
Hydrogen Gas ◽  
Transmission Electron Microscopy Micrographs ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Diffraction Patterns ◽  
Permeation Properties

Nanostructural characterizations of liquid metal–organic precursors-derived cobalt-doped amorphous silica (Si–Co–O) membranes supported on a mesoporous anodic alumina capillary (MAAC) tube were performed to study their unique high-temperature hydrogen gas permeation properties. Cross-sectional scanning transmission electron microscopy images and selected-area electron diffraction patterns indicated that the metal cobalt and the different oxidation states of cobalt oxides (CoO and Co3O4) nanocrystallites having a size range of 5–20 nm were in situ formed in the mesopore channels of the MAAC tube. In addition, high-resolution transmission electron microscopy micrographs and electron energy loss spectroscopy elemental mapping images indicated that the highly dense Co-doped amorphous Si–O formed within the mesopore channels of the MAAC tube. These nanostructural features could contribute to the hydrogen-selective permeation properties observed for the membranes.

An investigation of a nonspiking Ohmic contact to n-GaAs using the Si/Pd system

1988 ◽  
Vol 3 (5) ◽  
pp. 922-930 ◽  
Author(s):  
L. C. Wang ◽  
B. Zhang ◽  
F. Fang ◽  
E. D. Marshall ◽  
S. S. Lau ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Rutherford Backscattering Spectrometry ◽  
Tunneling Current ◽  
Solid State Reactions ◽  
Cross Sectional ◽  
Ohmic Behavior ◽  
Transmission Electron ◽  
Specific Contact ◽  
Diffraction Patterns ◽  
Ohmic Contact Formation

A low-resistance nonspiking Ohmic contact to n-GaAs is formed via solid-state reactions utilizing the Si/Pd/GaAs system. Samples with Si to Pd atomic ratios greater than 0.65 result in specific contact resistivity of the order of 10−6 Ω cm2, whereas samples with atomic ratios less than 0.65 yield higher specific contact resistivities or rectifying contacts. Rutherford backscattering spectrometry, cross-sectional transmission electron microscopy, and electron diffraction patterns show that a Pd, Si layer is in contact with GaAs with excess Si on the surface after the Ohmic formation annealing. This observation contrasts with that on a previously studied Ge/Pd/GaAs contact where Ohmic behavior is detected after transport of Ge through PdGe to the interface with GaAs. Comparing the Ge/Pd/GaAs system with the present Si/Pd/GaAs system suggests that a low barrier heterojunction between Ge and GaAs is not the primary reason for Ohmic contact behavior. Low-temperature measurements suggest that Ohmic behavior results from tunneling current transport mechanisms. A regrowth mechanism involving the formation of an n+ GaAs surface layer is proposed to explain the Ohmic contact formation.

Characterization of Interfacial Structure in Large Lattice Mismatch Heteroepitaxy: Ag/Si (111)

1990 ◽  
Vol 209 ◽  
Author(s):  
D.C. McKenna ◽  
G.-C. Wang ◽  
K. Rajan
Keyword(s):  
Lattice Mismatch ◽  
Interfacial Structure ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Interfacial Structures ◽  
Large Lattice ◽  
Large Lattice Mismatch ◽  
Diffraction Patterns

ABSTRACTThe interfacial structure of a large lattice mismatched (˜25%) (111) Ag-Si system was studied by using transmission electron diffraction (SADP - Selected Area Diffraction Pattern). The epitaxial films of Ag (600–1200Å) were grown by MBE on flat Si(111) and misoriented Si(1ll) surfaces. We have examined the interfacial structures of the Ag on 2° misoriented Si(111) using diffraction patterns of cross sectional view. Through a detail analysis of thelocation and shape of the diffraction spots, we can determine the epitaxial relationship between Ag and Si, the small tilt angle of Ag(111) planes withrespect to the misoriented Si(111), the period of the finite terrace size of the misoriented Si substrate, and the size of the ordered region in the Ag film. The O-lattice analysis developed by Bollmann has beenapplied to this interface andthe result is compared with the SADP observation.

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