Microstructure and Mechanical Behavior of Magnetron Sputtered Al-Cu Films

1991 ◽  
Vol 226 ◽  
Author(s):  
Tsann Lin ◽  
V. Raman
Keyword(s):  
Mechanical Behavior ◽  
Grain Morphology ◽  
Depth Sensing ◽  
Cu Films ◽  
Sputtered Films ◽  
Fine Grain ◽  
Platelet Morphology ◽  
Transmission Electron ◽  
Indentation Tests ◽  
Substrate Temperatures

AbstractWe have investigated the microstructure, electrical resistivity and mechanical behavior of DC magnetron sputtered A1-4wt%Cu films. The substrate temperatures were varied systematically from room temperature to 500 °C. Scanning and transmission electron microscopy of the sputtered films show that the top surface of the films sputtered at low temperatures (< 200 °C) exhibits a pure Al-like fine grain morphology. In contrast, sputter deposition at higher temperatures (> 300 °C) produces films that are characterized at the top surface by a distribution of θ’-A12Cu precipitates with a platelet morphology. The mechanical behavior of the sputtered films were investigated by performing indentation tests using a depth-sensing technique.

Effect of Substrate Temperature on the Shape Memory Behavior of Ti-Ni-Cu Ternary Alloy Sputtered Films

2012 ◽  
Vol 706-709 ◽  
pp. 1903-1908 ◽  
Author(s):  
Shozo Inoue ◽  
K. Morino ◽  
Keisuke Yoshiki ◽  
Takahiro Namazu
Keyword(s):  
Substrate Temperature ◽  
Shape Memory ◽  
Deposition Process ◽  
Cu Films ◽  
Shape Memory Behavior ◽  
Sputtered Films ◽  
Dsc Measurements ◽  
Crystalline Films ◽  
Substrate Temperatures ◽  
Si Wafer

The purpose of this work is to establish a deposition process of Ti-Ni-Cu films showing shape memory effect in the as-deposited state. 5-µm-thick Ti50Ni35Cu15 films have been deposited onto thermally oxidized (001) Si wafer by triple-source dc magnetron sputtering at various substrate temperatures. Their shape memory behavior were characterized by XRD, DSC measurements and thermal cycling tests under various constant tensile stresses. We have confirmed that crystalline films can be grown directly when the substrate temperature exceeds 400°C. The films deposited at higher than 450°C showed thermoelastic martensitic transformation and their Ms temperature slightly increased with increasing substrate temperature. Since their Ms temperature were found to be higher than 30°C, they can be used as an actuator at RT. These films were also found to have higher critical stress against plastic deformation than the post-deposition crystallized films. We have also tried to fabricate a prototype of micro-actuator and to characterize their actuation behavior and have confirmed that TiNiCu/SiO2 double layered diaphragm showed an actuation response to a pulsed current of more than 100Hz.

Epitaxial Growth of Nb Films and Nb/Cu Bilayers on A12O3 Substrates by DC Magnetron Sputtering

1998 ◽  
Vol 528 ◽  
Author(s):  
R. Loloee ◽  
M.A. Crimp ◽  
W. Zhu ◽  
W.P. Pratt
Keyword(s):  
Electron Microscopy ◽  
Sputter Deposition ◽  
Dc Magnetron Sputtering ◽  
High Quality ◽  
Cu Films ◽  
Force Microscopy ◽  
Sputtered Films ◽  
Sapphire Substrates ◽  
Atomic Force ◽  
Transmission Electron

AbstractEpitaxial single crystal Nb films have been grown by sputter deposition on (1 1 2 0) sapphire substrates. Subsequently, high quality epitaxial Cu films, with two orientation variants, have been grown onto the epitaxial Nb films. The sputtered films have been characterized using atomic force microscopy, electron backscattered patterns, and conventional transmission electron microscopy.

Gold-Nickel Multilayer Films: Structure-Property Correlations

1988 ◽  
Vol 130 ◽  
Author(s):  
S. R. Nutt ◽  
K A. Green ◽  
S. P. Baker ◽  
W. D. Nix ◽  
A. Jankowski
Keyword(s):  
Small Variation ◽  
Multilayer Films ◽  
Structure Property ◽  
Depth Sensing ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Short Period ◽  
Indentation Tests ◽  
Diffraction Patterns ◽  
Growth Features

AbstractGold-nickel multilayer films with periods of 1.2 - 4.6 nm were deposited on silicon substrates by magnetron sputtering, and plan and cross-sectional specimens were examined by transmission electron microscopy. The cross-sectional specimens revealed well-defined layering and columnar growth features that extended through the film thickness. Dark striations extending normal to the layers were attributed to diffraction contrast from defect strain fields. Diffraction patterns showed that the films were highly textured and that short-period films had a single fcc structure, while long-period films separated into three fcc structures. High-resolution images of the layer interfaces showed local regions of epitaxy partitioned by regions of disorder.Indentation tests using a Nanoindenter, a depth-sensing indentation device, were performed to measure the elastic modulus and hardness of the films. No modulus enhancement was detected, and a small variation in hardness was measured.

Aspects of microanalysis in a transmission electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 510-511
Author(s):  
R. Sinclair ◽  
B.E. Jacobson
Keyword(s):  
Grain Size ◽  
Electron Beam ◽  
Electron Microscope ◽  
Chemical Analysis ◽  
Transmission Electron Microscope ◽  
Vapor Deposition ◽  
Critical Currents ◽  
X Ray ◽  
Fine Grain ◽  
Transmission Electron

INTRODUCTIONThe prospect of performing chemical analysis of thin specimens at any desired level of resolution is particularly appealing to the materials scientist. Commercial TEM-based systems are now available which virtually provide this capability. The purpose of this contribution is to illustrate its application to problems which would have been intractable until recently, pointing out some current limitations.X-RAY ANALYSISIn an attempt to fabricate superconducting materials with high critical currents and temperature, thin Nb3Sn films have been prepared by electron beam vapor deposition [1]. Fine-grain size material is desirable which may be achieved by codeposition with small amounts of Al2O3 . Figure 1 shows the STEM microstructure, with large (∽ 200 Å dia) voids present at the grain boundaries. Higher quality TEM micrographs (e.g. fig. 2) reveal the presence of small voids within the grains which are absent in pure Nb3Sn prepared under identical conditions. The X-ray spectrum from large (∽ lμ dia) or small (∽100 Ǻ dia) areas within the grains indicates only small amounts of A1 (fig.3).

(111) Monocrystalline Nickel Films

1972 ◽  
Vol 30 ◽  
pp. 512-513
Author(s):  
T.E. Pratt ◽  
R.W. Vook
Keyword(s):  
Film Thickness ◽  
Deposition Rate ◽  
Room Temperature ◽  
Narrow Range ◽  
High Vacuum ◽  
Residual Pressure ◽  
Temperature Dependent ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Substrate Temperatures

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

Copper Chemical Vapor Deposition using a Novel Cu(II) Precursor for Contact Via Filling Process

2007 ◽  
Vol 990 ◽  
Author(s):  
Hideaki Zama ◽  
Yuuji Nishimura ◽  
Michiyo Yago ◽  
Mikio Watanabe
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hydrogen Reduction ◽  
Reduction Process ◽  
Chemical Vapor ◽  
Molar Ratio ◽  
Cu Films ◽  
Pure Cu ◽  
Substrate Temperatures ◽  
Advanced Generation

ABSTRACTChemical vapor deposition (CVD) of copper using both a novel Cu(II) β-diketonate source and hydrogen reduction process was studied to fill contact vias with the smallest diameter in the 32nm and more advanced generation chip. Pure Cu films were grown under the condition with the product of hydrogen partial pressure and H2/Cu source molar ratio being over 1,000,000. We succeeded in filling the 40-nm-diameter contact vias by optimizing the growth condition of the Cu-CVD in both substrate temperatures and reaction pressures.

Photo Modified Growth of GaAs by Chemical Beam Epitaxy

1998 ◽  
Vol 510 ◽  
Author(s):  
R. Jothilingam ◽  
T. Farrell ◽  
T.B. Joyce ◽  
P.J. Goodhew
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Rate ◽  
Electrical Power ◽  
Xenon Lamp ◽  
Chemical Beam Epitaxy ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
Laser Reflectometry

AbstractWe report the photo modified growth of GaAs by chemical beam epitaxy at substrate temperatures in the range 335 to 670°C using triethygallium (TEG) and arsine. A mercury-xenon lamp (electrical power 200 W) provided the irradiation for the photoassisted growth. The growth was monitored in real time by laser reflectometry (LR) using a 670 nm semiconductor laser, and the optically determined growth rate agreed with that obtained from the layer thickness measured by cross sectional transmission electron microscopy. The observed photo-enhancement of the growth rate at low substrate temperatures and inhibition at high substrate temperatures is thermal in origin, consistent with raising the substrate temperature by 10±3°C. Cross sectional transmission electron microscopy showed that the photoassisted layers are essentially free from dislocations

scholarly journals Analysis of depth-sensing indentation tests with a Knoop indenter

2001 ◽  
Vol 16 (6) ◽  
pp. 1660-1667 ◽  
Author(s):  
L. Riester ◽  
T. J. Bell ◽  
A. C. Fischer-Cripps
Keyword(s):  
Elastic Modulus ◽  
Elastic Recovery ◽  
Indentation Test ◽  
New Method ◽  
Short Axis ◽  
Depth Sensing ◽  
Specimen Material ◽  
Indentation Tests ◽  
Conventional Methods ◽  
Knoop Indenter

The present work shows how data obtained in a depth-sensing indentation test using a Knoop indenter may be analyzed to provide elastic modulus and hardness of the specimen material. The method takes into account the elastic recovery along the direction of the short axis of the residual impression as the indenter is removed. If elastic recovery is not accounted for, the elastic modulus and hardness are overestimated by an amount that depends on the ratio of E/H of the specimen material. The new method of analysis expresses the elastic recovery of the short diagonal of the residual impression into an equivalent face angle for one side of the Knoop indenter. Conventional methods of analysis using this corrected angle provide results for modulus and hardness that are consistent with those obtained with other types of indenters.

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