Pulsed Laser Melting of Metallic Glasses

1982 ◽  
Vol 13 ◽  
Author(s):  
Animesh K. Jain ◽  
D.K. Sood ◽  
G. Battaglin ◽  
A. Carnera ◽  
G. Della Mea ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Heat Flow ◽  
Surface Topography ◽  
Metallic Glasses ◽  
Ruby Laser ◽  
Depth Profiling ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Depth Profiles ◽  
Diffusion Analysis

ABSTRACTWe have studied pulsed ruby laser melting of metallic glasses – Fe40Ni40P14B6 and Fe40Ni40B20. Both amorphous and crystallised samples were used, and some of them were implanted with Ru to serve as a marker species. SEM measurements on surface topography and RBS (1.8 MeV He+) depth profiling of Ru marker redistribution were used to establish melting above about 1 J/cm2. Heat flow calculations and liquid phase diffusion analysis of the Ru marker species under a moving melt front have been performed. The observed redistribution of Ru upto 2.5 J/cm2 is consistent with an effective D ∼ 5 × 10−5 cm2 s−1. The flat Ru depth profiles at higher energy densities are shown to arise from convection effects. Results on crystallised and amorphous samples are similar. Preliminary TEM measurements of quenched regions on a crystallised sample show an unexpected absence of amorphous phase.

Pulsed Laser Treatment of Virgin, Self and Europium Implanted Nickel: Evidence of Defect Impurity Interaction

1981 ◽  
Vol 7 ◽  
Author(s):  
G. Battaglin ◽  
A. Carnera ◽  
G. Della Mea ◽  
P. Mazzoldi ◽  
Animesh K. Jain ◽  
...  
Keyword(s):  
Solid Solution ◽  
Liquid Phase ◽  
Laser Treatment ◽  
Ruby Laser ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Metastable Solid Solution ◽  
Ion Channeling ◽  
Impurity Interaction ◽  
The Eu

ABSTRACTWe present a comparative study (by 1.8 MeV 4He+ ion channeling) of virgin, self and Eu implanted single crystals of nickel, under irradiation with single ruby laser pulses. The as implanted Eu is nearly non-substitutional and remains so, even after laser treatment. The comparative defect dechanneling behaviour provides explicit evidence of defect-impurity interaction which may be suppressing the formation of an expected metastable solid solution in the Eu-Ni system, which possesses miscibility in the liquid phase. A clear surface Eu peak appears at 2.1 J/cm2.

scholarly journals Heat flow model for pulsed laser melting and rapid solidification of ion implanted GaAs

2010 ◽  
Vol 108 (1) ◽  
pp. 013508 ◽  
Author(s):  
Taeseok Kim ◽  
Manoj R. Pillai ◽  
Michael J. Aziz ◽  
Michael A. Scarpulla ◽  
Oscar D. Dubon ◽  
...  
Keyword(s):  
Heat Flow ◽  
Rapid Solidification ◽  
Flow Model ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Heat Flow Model ◽  
Ion Implanted

Liquid Phase Growth of Epitaxial Ni and Co Silicides by Pulsed Laser Irradiation

1983 ◽  
Vol 23 ◽  
Author(s):  
R. T. Tung ◽  
J. M. Gibson ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Liquid Phase Epitaxy ◽  
Cell Formation ◽  
Pulsed Laser ◽  
Phase Growth ◽  
Interfacial Instabilities ◽  
Laser Melting ◽  
Liquid Phase Growth ◽  
Pulsed Laser Irradiation

ABSTRACTEpitaxial Ni and Co silicides have been fabricated using pulsed laser melting. Interfacial instabilities and cell formation are suppressed during the liquid-phase epitaxy by melting mono or disilicide layers. Single crystal NiSi2 and CoSi2 films have been grown on (100) and (111) Si following a post-anneal. This method does not require UHV deposition or reaction techniques.

Time-Resolved Measurements of Solidification and Undercooling in Metals and Alloys

1989 ◽  
Vol 157 ◽  
Author(s):  
Harry A. Atwater ◽  
Jeffrey A. West ◽  
Patrick M. Smith ◽  
M.J. Aziz ◽  
J.Y. Tsao ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Heat Flow ◽  
Rapid Solidification ◽  
Pulsed Laser ◽  
Metal Films ◽  
Laser Melting ◽  
Time Resolved ◽  
Resistivity Measurements ◽  
Planar Crystal

ABSTRACTWe have performed nanosecond-resolution measurements of the lateral electrical resistivity of thin metal films on insulating substrates. Comparison of transient resistivity measurements with optical reflectivity measurements and heat-flow calculations permits the determination of the position and velocity of a planar crystal/melt interface, and an estimate of undercooling during pulsed laser melting of metals. We report detailed results for rapid solidification of Ni, including the observation of hypercooling of .liquid Ni.

Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

1993 ◽  
Vol 51 ◽  
pp. 438-439
Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ceramic Materials ◽  
Laser Deposition ◽  
Triple Junctions ◽  
Ion Milling ◽  
Multicomponent Oxides ◽  
Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

scholarly journals The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4138
Author(s):  
Ye Yuan ◽  
Yufang Xie ◽  
Ning Yuan ◽  
Mao Wang ◽  
René Heller ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Ion Implantation ◽  
Diluted Magnetic Semiconductors ◽  
Laser Annealing ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Co Doping ◽  
Diluted Magnetic

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.

Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting

2007 ◽  
Vol 25 (6) ◽  
pp. 1847 ◽  
Author(s):  
Malek Tabbal ◽  
Taegon Kim ◽  
Jeffrey M. Warrender ◽  
Michael J. Aziz ◽  
B. L. Cardozo ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Silicon Based

Pulsed Laser Annealing of R.F.Sputtered Amorphous Si : H.Films, Doped with Arsenic

1981 ◽  
Vol 4 ◽  
Author(s):  
E. Fogarassy ◽  
R. Stuck ◽  
M. Toulemonde ◽  
P. Siffert ◽  
J.F. Morhange ◽  
...  
Keyword(s):  
Ruby Laser ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Amorphous Layer ◽  
High Concentration ◽  
Topographic Analysis ◽  
Pulsed Laser Annealing ◽  
Residual Hydrogen ◽  
Silicon Target ◽  
Amorphous Si

Arsenic doped amorphous silicon layers have been deposited on silicon single crystals by R.F.cathodic sputtering of a silicon target in a reactive argon-hydrogen mixture, and annealed with a Q-switched Ruby laser. Topographic analysis of the irradiated layers has shown the formation of a crater, due to an evaporation effect of material which could be related to the presence of a high concentration of Ar in the amorphous layer. RBS and Raman Spectroscopy showed that the remaining layer is not recrystallised probably due to inhibition by the residual hydrogen. However, it was found that arsenic diffuses into the monocrystalline substrate by laser induced diffusion of dopant from the surface solid source, leading to the formation of good quality P-N junctions.

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