Pulsed Laser Treatment of Virgin, Self and Europium Implanted Nickel: Evidence of Defect Impurity Interaction

MRS Proceedings ◽

10.1557/proc-7-333 ◽

1981 ◽

Vol 7 ◽

Author(s):

G. Battaglin ◽

A. Carnera ◽

G. Della Mea ◽

P. Mazzoldi ◽

Animesh K. Jain ◽

...

Keyword(s):

Solid Solution ◽

Liquid Phase ◽

Laser Treatment ◽

Ruby Laser ◽

Pulsed Laser ◽

Laser Pulses ◽

Metastable Solid Solution ◽

Ion Channeling ◽

Impurity Interaction ◽

The Eu

ABSTRACTWe present a comparative study (by 1.8 MeV 4He+ ion channeling) of virgin, self and Eu implanted single crystals of nickel, under irradiation with single ruby laser pulses. The as implanted Eu is nearly non-substitutional and remains so, even after laser treatment. The comparative defect dechanneling behaviour provides explicit evidence of defect-impurity interaction which may be suppressing the formation of an expected metastable solid solution in the Eu-Ni system, which possesses miscibility in the liquid phase. A clear surface Eu peak appears at 2.1 J/cm2.

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Pulsed Laser Melting of Metallic Glasses

MRS Proceedings ◽

10.1557/proc-13-703 ◽

1982 ◽

Vol 13 ◽

Cited By ~ 1

Author(s):

Animesh K. Jain ◽

D.K. Sood ◽

G. Battaglin ◽

A. Carnera ◽

G. Della Mea ◽

...

Keyword(s):

Liquid Phase ◽

Heat Flow ◽

Surface Topography ◽

Metallic Glasses ◽

Ruby Laser ◽

Depth Profiling ◽

Pulsed Laser ◽

Laser Melting ◽

Depth Profiles ◽

Diffusion Analysis

ABSTRACTWe have studied pulsed ruby laser melting of metallic glasses – Fe40Ni40P14B6 and Fe40Ni40B20. Both amorphous and crystallised samples were used, and some of them were implanted with Ru to serve as a marker species. SEM measurements on surface topography and RBS (1.8 MeV He+) depth profiling of Ru marker redistribution were used to establish melting above about 1 J/cm2. Heat flow calculations and liquid phase diffusion analysis of the Ru marker species under a moving melt front have been performed. The observed redistribution of Ru upto 2.5 J/cm2 is consistent with an effective D ∼ 5 × 10−5 cm2 s−1. The flat Ru depth profiles at higher energy densities are shown to arise from convection effects. Results on crystallised and amorphous samples are similar. Preliminary TEM measurements of quenched regions on a crystallised sample show an unexpected absence of amorphous phase.

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Dopant Distribution and Electrical Characteristics of Boron-Doped Si1−xGex/Si p+/N Heterojunction Diodes Produced by Gas Immersion Laser Doping (GILD) / Pulsed Laser-Induced Epitaxy (PLIE)

MRS Proceedings ◽

10.1557/proc-263-383 ◽

1992 ◽

Vol 263 ◽

Cited By ~ 1

Author(s):

K.-Josef Kramer ◽

E. Ishida ◽

S. Talwar ◽

K. H. Weiner ◽

P. G. Carey ◽

...

Keyword(s):

Liquid Phase ◽

Laser Energy ◽

Pulsed Laser ◽

Laser Pulses ◽

Layer Growth ◽

Molten Layer ◽

Energy Fluence ◽

Laser Doping ◽

Hall Effect Measurements ◽

Heterojunction Diodes

ABSTRACTPulsed Laser-Induced Epitaxy / Gas Immersion Laser Doping is used to create borondoped heteroepitaxial p+/N Si1−xGex/Si layers and diodes. Borontriflouride is used as the gaseous dopant source. The mechanisms of heteroepitaxial layer growth of Si1−xGex using PLIE are described and impurity incorporation from the gas phase into the molten layer is investigated. Compared to other heteroepitaxial techniques, very different process parameters determine the growth. The energy fluence of the pulsed laser beam determines the melt depth and thus the layer thickness; Si and Ge intermix in the liquid phase, the diffusion of B dopant also depends on its diffusivity in the liquid phase. Boron incorporation is investigated as a function of laser energy fluence and number of laser pulses using SIMS and Hall-effect measurements. The dose of incorporated dopant is on the order of 1013cm−2 per pulse. The obtained boron profiles are flat except for a pile-up at the interface which is due to segregation. Boron and Germanium distribution are compared to turn-on voltage shifts obtained from p+/N Si1-xGex/Si heterojunction diodes fabricated with the technique. A two-step Laser process to independently control metallurgical and electrical junction depth of the diodes has been implemented. The selective nature of the epitaxial process is emphasized.

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Изменение морфологии, структуры и микротвердости образцов циркониевого сплава в результате воздействия лазерными импульсами

Письма в журнал технической физики ◽

10.21883/pjtf.2020.01.48856.18029 ◽

2020 ◽

Vol 46 (1) ◽

pp. 12

Author(s):

В.И. Проскуряков ◽

И.В. Родионов ◽

В.А. Кошуро ◽

Л.Е. Куц ◽

И.В. Перинская

Keyword(s):

Surface Layer ◽

Laser Radiation ◽

Laser Treatment ◽

Zirconium Alloy ◽

Experimental Studies ◽

Pulsed Laser ◽

Laser Pulses ◽

Monoclinic Zro2 ◽

Pulsed Laser Radiation ◽

Modification Of The Surface

The results of experimental studies on the modification of the surface layer of zirconium alloy grade E 110 by the action of pulsed laser radiation are presented. It was established that, as a result of laser treatment, the morphology of the surface layer changes with the formation of nanoparticles up to 50 nm in size. The relief of the treated surface becomes structurally heterogeneous, containing phases of zirconium and monoclinic ZrO2 dioxide. It was revealed that, as a result of exposure to laser pulses, a significant increase in the microhardness of the surface of zirconium samples occurs to 27.1 ± 0.1 GPa.

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Criteria for formation of a metastable solid solution by rapid melt quenching during pulsed laser or electron beam treatment

Radiation Effects ◽

10.1080/01422448108226562 ◽

1982 ◽

Vol 67 (1-2) ◽

pp. 13-18 ◽

Cited By ~ 10

Author(s):

D. K. Sood

Keyword(s):

Solid Solution ◽

Electron Beam ◽

Pulsed Laser ◽

Electron Beam Treatment ◽

Metastable Solid Solution ◽

Melt Quenching ◽

Rapid Melt Quenching

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Laser Induced Defects and Materials Interactions in the V-Si System

MRS Proceedings ◽

10.1557/proc-1-607 ◽

1980 ◽

Vol 1 ◽

Author(s):

B. R. Appleton ◽

B. Stritzker ◽

C. W. White ◽

J. Narayan ◽

J. Fletcher ◽

...

Keyword(s):

Single Crystals ◽

Laser Annealing ◽

Pulsed Laser ◽

Laser Pulses ◽

Rapid Quenching ◽

Ion Scattering ◽

Ion Channeling ◽

Pulsed Laser Annealing ◽

Composition And Structure ◽

Induced Defects

ABSTRACTPulsed laser annealing has been evaluated as a technique for fabricating superconducting V3 Si from multilayer V-Si samples, and the nature of laser-induced defects in V3 Si single crystals has been examined. Correlated analyses by ion scattering, ion channeling, Tc measurements and TEM were used to examine the composition and structure of samples subjected to single and multiple laser pulses. It was observed that although the superconducting A15 phase could be formed by pulsed laser mixing, the associated rapid quenching effects introduced defects which were not completely removed by thermal annealing to 925 K for 1 hour. Ion channeling and TEM studies of V3 Si single crystals showed that pulsed laser irradiation caused microcracks to develop in the surface, probably from mechanical stresses induced by thermal gradients.

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Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100148022 ◽

1993 ◽

Vol 51 ◽

pp. 438-439

Author(s):

Michael P. Mallamaci ◽

James Bentley ◽

C. Barry Carter

Keyword(s):

Liquid Phase ◽

Single Crystal ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Ceramic Materials ◽

Laser Deposition ◽

Triple Junctions ◽

Ion Milling ◽

Multicomponent Oxides ◽

Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

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