Characterization and Application of Laser Induced Seeded-Lateral Epitaxtal Si Layers on SiO2

1982 ◽  
Vol 13 ◽  
Author(s):  
M. Miyao ◽  
M. Ohkura ◽  
T. Warabisako ◽  
T. Tokuyama
Keyword(s):  
Electrical Properties ◽  
Epitaxial Layer ◽  
Grown Layer ◽  
Preliminary Results ◽  
Crystal Properties ◽  
Bipolar Type

ABSTRACTElectrical and crystal properties of seeded lateral epitaxial Si are evaluated as a function of distance from seeding area with the aid of a micro-probe RHEED and MOSFET fabrication. the results indicate that the quality of a grown layer is as good as that of bulk Si Crystal for most of the epitaxial layer. However, at the SiO2 edge, electrial properties are somewhat poor due to the existence of dislocation and residual stress.Element devices useful for SO structures are fabricated. Electrical properties of MOSPET's with double active areas indicate that surface and bottomregions of the epitaxial layer are all of device worthy quality.Insulated control gate bipolar type transistors are proposed and some preliminary results are shown.

Preliminary Results of the Skull Base Inventory: A Quality-of-Life Instrument for Skull Base Pathologies

2015 ◽  
Vol 76 (S 01) ◽  
Author(s):  
Soroush Larjani ◽  
Eric Monteiro ◽  
Allan Vescan ◽  
Gelareh Zadeh ◽  
Fred Gentili ◽  
...  
Keyword(s):  
Quality Of Life ◽  
Skull Base ◽  
Preliminary Results ◽  
Life Instrument

scholarly journals Assessment of the microbiological quality of fresh produce on sale in Sicily, Italy: preliminary results

2015 ◽  
Vol 22 (1) ◽  
Author(s):  
Cinzia Cardamone ◽  
Aurora Aleo ◽  
Caterina Mammina ◽  
Giuseppa Oliveri ◽  
Anna Maria Di Noto
Keyword(s):  
Fresh Produce ◽  
Microbiological Quality ◽  
Preliminary Results

SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties

2007 ◽  
Vol 556-557 ◽  
pp. 153-156
Author(s):  
Chi Kwon Park ◽  
Gi Sub Lee ◽  
Ju Young Lee ◽  
Myung Ok Kyun ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Layer ◽  
Light Emission ◽  
Epitaxial Layers ◽  
Current Voltage ◽  
Space Technique ◽  
Sublimation Method ◽  
Device Applications ◽  
P Type ◽  
Surface Morphologies

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs having a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized.

Effect of Crystallographic Quality of Grain Boundaries on Both Mechanical and Electrical Properties of Electroplated Copper Thin Film Interconnections

2015 ◽  
Vol 137 (3) ◽  
Author(s):  
Naokazu Murata ◽  
Naoki Saito ◽  
Kinji Tamakawa ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Fatigue Fracture ◽  
High Crystallinity ◽  
Mechanical And Electrical Properties ◽  
Copper Interconnection ◽  
Electroplated Copper ◽  
Two Parameters ◽  
Low Crystallinity

Effects of crystallographic quality of grain boundaries on mechanical and electrical properties were investigated experimentally. A novel method using two parameters of image quality (IQ) and confidence index (CI) values based on electron back-scattering diffraction (EBSD) analysis was proposed in order to evaluate crystallographic quality of grain boundaries. IQ value was defined as an index to evaluate crystallinity in region irradiated with electron beam. CI value determined existence of grain boundaries in the region. It was found that brittle intergranular fatigue fracture occurred in the film without annealing and the film annealed at 200 °C because network of grain boundaries with low crystallinity remained in these films. On the other hand, the film annealed at 400 °C caused only ductile transgranular fatigue fracture because grain boundaries with low crystallinity almost disappeared. From results of measurement of electrical properties, electrical resistivity of copper interconnection annealed at 400 °C with high crystallinity (2.09 × 10−8 Ωm) was low and electron migration (EM) resistance was high compared with an copper interconnection without annealing with low crystallinity (3.33 × 10−8 Ωm). It was clarified that the interconnection with high crystallinity had superior electrical properties. Thus, it was clarified that the crystallographic quality of grain boundaries has a strong correlation of mechanical and electrical reliability.

Fr235 THE ASSOCIATION BETWEEN QUALITY OF LIFE, FOOD AVOIDANCE, AND MALADAPTIVE EATING BEHAVIORS IN ADULTS WITH CELIAC DISEASE. PRELIMINARY RESULTS.

2021 ◽  
Vol 160 (6) ◽  
pp. S-272
Author(s):  
Anne R. Lee ◽  
Janet Schebendach ◽  
Yara Gholmie ◽  
Randi L. Wolf ◽  
Jessica Lebovits ◽  
...  
Keyword(s):  
Quality Of Life ◽  
Celiac Disease ◽  
Eating Behaviors ◽  
Food Avoidance ◽  
Preliminary Results ◽  
Maladaptive Eating

The Effect of Ge Segregation on Oxidation of Si

1987 ◽  
Vol 105 ◽  
Author(s):  
E. C. Frey ◽  
N. R. Parikh ◽  
M. L. Swanson ◽  
M. Z. Numan ◽  
W. K. Chu
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Epitaxial Layer ◽  
Atmospheric Pressure ◽  
Oxidation Rate ◽  
Oxidation Temperature ◽  
Pressure Oxidation ◽  
Enhanced Oxidation ◽  
High Pressure Oxidation

AbstractWe have studied oxidation of various Si samples including: Ge implanted Si, CVD and MBE grown Si(0.4–4% Ge) alloys, and MBE grown Si-Si(Ge) superlattices. The samples were oxidized in pyrogenic steam (800–1000°C, atmospheric pressure) and at low temperature and high pressure (740°C, 205 atm of dry O2). The oxidized samples were analyzed with RBS/channeling and ellipsometry.An enhanced oxidation rate was seen for all Ge doped samples, compared with rates for pure Si. The magnitude of the enhancement increased with decreasing oxidation temperature. For steam oxidations the Ge was segregated from the oxide and formed an epitaxial layer at the Si-SiO2 interface; the quality of the epitaxy was highest for the highest oxidation temperatures. For high pressure oxidation the Ge was trapped in the oxide and the greatest enhancement in oxidation rate (>100%) was observed.

4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106

2014 ◽  
Vol 778-780 ◽  
pp. 121-124 ◽  
Author(s):  
Marco Mauceri ◽  
Antonino Pecora ◽  
Grazia Litrico ◽  
Carmelo Vecchio ◽  
Marco Puglisi ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Epitaxial Layer ◽  
Defect Density ◽  
Injection System ◽  
Preliminary Results ◽  
Roughness Measurements

Preliminary results of 150mm SiC 4H 4°off have been obtained with the new 150mm automatic horizontal hot wall reactor PE1O6, using chlorinated chemistry (SiHCl3 + C2H4). A new injection system has been tested in two configurations and results will be shown in this paper. AFM surface roughness measurements and epi defect density have been reported.

INFLUENCE OF THE LATTICE MISMATCH ON THE PHOTOLUMINESCENCE BAND-TAIL PARAMETER IN InGaAsP/InP HETEROSTRUCTURES

2001 ◽  
Vol 15 (17n19) ◽  
pp. 708-711
Author(s):  
A. IRIBARREN
Keyword(s):  
Linear Dependence ◽  
Lattice Mismatch ◽  
Semiconductor Heterostructures ◽  
Full Width ◽  
Half Maximum ◽  
Photoluminescence Spectra ◽  
Band Tail ◽  
Photoluminescence Band ◽  
Grown Layer

The compositional inhomogeneities in semiconductor heterostructures leads to diminishing the quality of the grown layer which reflects in the shape of the rocking curves, where the full width at half maximum (FWHM) of the peaks is larger. Consequently, the quality of the layers characterized by an increase of the disorder also reflects in the band-tail parameter ( E 0) of the photoluminescence spectra. A linear dependence of the FWHM with the lattice mismatch (Δa) was found. The dependence of E 0 as a function of FWHM are presented. It was found that E 0 keep constant up to Δ a / a ≅ 0.15% and FWHM ≅ 50" from where it begins to increase.

scholarly journals A TALE OF TWO TWITTERS? IDENTIFYING BRIDGES BETWEEN LANGUAGE BASED TWITTERSPHERES

2020 ◽  
Author(s):  
Felix Victor Münch ◽  
Luca Rossi
Keyword(s):  
Climate Change ◽  
Data Collection ◽  
Forest Fire ◽  
Forced Migration ◽  
Online Communication ◽  
Online Media ◽  
Public Spheres ◽  
Preliminary Results ◽  
Global Space

Global political developments – such as Brexit, climate change, or forced migration – are entangled with communication that transcends national publics. Meanwhile, the EU’s integrity suffers, also due to polarised online discourses, which are sometimes actively manipulated. Therefore, an overview of online communication beyond language barriers is essential. However, whether and how online media create a global space that sustains deliberation of national and global interests by citizens, remains understudied. We approach this problem by exploring relations between the Italian and German Twittersphere, while asking: 1) What is the macrostructure of this bilingual network? 2) Are there bridges between these language communities in the form of single accounts and how can they be described? 3) Are there bridges in the form of groups and what are they tweeting about? We build on an innovative network crawling strategy for language-based Twitter follow networks. We developed it further to combine strengths of rank degree, snowball, and forest fire sampling. Thereby, we collect a network sample of the most central accounts in the Italian-German Twittersphere. Preliminary results suggest a bridging quality of soccer and connections between political clusters of both languages by EU politicians. Furthermore, larger network clusters connect mainly with one linguistic domain while smaller communities show a bridging behaviour. The final paper will present results of months of data collection, focusing on the relation between topics discussed within clusters and their connectivity. While it focuses on the German-Italian Twittersphere, our methods open up new avenues of enquiry regarding multi-language public spheres.

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