Tunable Uv Laser Photolysis of Organometallic Compounds with Product Detection by Laser Mass Spectroscopy

1988 ◽  
Vol 129 ◽  
Author(s):  
Th. Beuermann ◽  
M. Stuke
Keyword(s):  
Mass Spectroscopy ◽  
Laser Light ◽  
Uv Light ◽  
Frequency Doubling ◽  
Organometallic Compounds ◽  
Dye Laser ◽  
Laser Photolysis ◽  
Photon Absorption ◽  
Uv Laser ◽  
Group Iii

ABSTRACTWe use tunable UV laser light in the region 200-320 nm, produced by frequency doubling the output of a dye laser for the decomposition of organometallic compounds. This method has been applied to TMA, trimethylaluminum AI(CH3)3. Only theTMA monomer absorbs UV light for λ>220nm. TMA decomposes by one-photon absorption mainly into two channels: aluminum plus organic fragments and aluminummonomethyl plus organic fragments. The ratio [A1]/[AICH3] is wavelength dependent. Finally, we present a mechanism to explain the photolysis of trimethyl compounds of group III elements (Al,Ga,In).

Development of Laser Dresser for Resin Bonded Diamond Wheel

2007 ◽  
Vol 329 ◽  
pp. 169-174 ◽  
Author(s):  
Hiroshi Matsuura ◽  
Kazuhiro Hane ◽  
Yasuhiro Kunieda ◽  
Nobuhito Yoshihara ◽  
Ji Wang Yan ◽  
...  
Keyword(s):  
Optical Fiber ◽  
Laser Light ◽  
Laser Energy ◽  
Uv Light ◽  
Mechanical Damage ◽  
Diamond Wheel ◽  
The State ◽  
Uv Laser ◽  
Wheel Surface ◽  
Core Diameter

The state of the wheel surface after dressing is important for processing of a surface to the nano-order level. A laser dresser was developed using ultraviolet (UV) laser light, which imparts no mechanical damage to the resin bond. One feature of this system is that UV laser energy is transmitted by a special optical fiber for UV light, and is transmitted only to the resin bond. Using this newly developed laser dresser, it was possible to ablate the resin bond to a depth of over 2 microns using a fiber with a core diameter of 200 microns.

Deep-UV, Light-Assisted, Wet Etching of Compound Semiconductors

1983 ◽  
Vol 29 ◽  
Author(s):  
D. V. Podlesnik ◽  
H. H. Gilgen ◽  
R. M. Osgood
Keyword(s):  
Aspect Ratio ◽  
Visible Light ◽  
High Aspect Ratio ◽  
Laser Light ◽  
Uv Light ◽  
Compound Semiconductors ◽  
Wet Etching ◽  
Uv Laser ◽  
Via Holes ◽  
Deep Uv

ABSTRACTDeep-UV, laser-light-assisted, wet etching of compound semiconductors is reported. As ccmpared to results with visible light, the etching rates per unit power density in the ultraviolet are considerably faster; a factor of >30 is seen under typical conditions. A correlation between the UV absorption in different etching solutions and the light-enhanced etching rates is examined. Gratings with 100-nm resolution have been produced and high-aspect-ratio via-holes have been etched.

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