The Initial Stages of Plasma Synthesis of Diamond Films

1988 ◽  
Vol 129 ◽  
Author(s):  
R. Meilunas ◽  
M.S. Wong ◽  
K. Sheng ◽  
T.P. Ong ◽  
R.P.H. Chang
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Nucleation And Growth ◽  
Plasma Synthesis ◽  
X Ray Diffraction ◽  
Diamond Nucleation ◽  
X Ray ◽  
Deposition Parameters ◽  
Starting Conditions ◽  
Size And Morphology

ABSTRACTThe effects of plasma starting conditions on the initial stages of diamond nucleation and growth in a microwave plasma have been studied as a function of important deposition parameters. The influence of the substrate temperature on the diamond nucleation rate, quality, and final film morphology has been elucidated through various analytical measurements. The diamond films are characterized with Raman spectroscopy, X-ray diffraction, and scanning electron microscopy. Finally, methods are described for reproducibly controlling the grain size and morphology of the diamond films for tribological and abrasive applications.

Realization Of X-Ray Lithography Masks Based On Diamond Membranes

1993 ◽  
Vol 306 ◽  
Author(s):  
M. F. Ravet ◽  
A. Gicquel ◽  
E. Anger ◽  
Z. Z. Wang ◽  
Y. Chen ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Plasma Reactor ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Nucleation And Growth ◽  
Local Conditions ◽  
X Ray ◽  
Deposition Parameters ◽  
Deposition Conditions

AbstractDeposition parameters acting on nucleation and growth local conditions have been optimized in a bell jar microwave plasma reactor to obtain polycrystalline diamond thin films compatible with X-ray membrane requests. The microstructure and the chemical quality of the films were estimated by SEM and Raman spectroscopy respectively, the roughness was evaluated by AFM experiments and the residual stress was deduced from the substrate deflection method. Membranes were obtained by removing the silicon substrate on 15 mm diameter circular windows. The optical transparency depending on deposition conditions was optimized up to 65% at 630 nm for 1 μm thickness. A high resolution additive mask process, based on well taut membranes and low stress electroplated gold absorber, was carried out. Micrometric and submicrometric mask patterns were generated in photoresists both by electron beam lithography with a nanopattern generator and by X-ray lithography using the synchrotron radiation facility implemented at LURE-Orsay. Despite the diamond films roughness of the order of 30 nm, well defined dots and lines as narrow as 100–200 nm could be obtained.

Diamond growth on carbide surfaces using a selective etching technique

1994 ◽  
Vol 9 (8) ◽  
pp. 2154-2163 ◽  
Author(s):  
K.J. Grannen ◽  
R.P.H. Chang
Keyword(s):  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Powder ◽  
Nucleation And Growth ◽  
Diamond Growth ◽  
Etching Technique ◽  
Diamond Nucleation ◽  
Nucleation And Growth Mechanism

Microwave plasma-enhanced chemical vapor deposition of diamond films on silicon carbide and tungsten carbide (with 6% cobalt) surfaces using fluorocarbon gases has been demonstrated. No diamond powder pretreatment is necessary to grow these films with a (100) faceted surface morphology. The diamond films are characterized by scanning electron microscopy and Raman spectroscopy. The proposed nucleation and growth mechanism involves etching of the noncarbon component of the carbide by atomic fluorine to expose surface carbon atoms and diamond nucleation and growth on these exposed carbon atoms. Hydrogen is necessary in the growth process to limit the rapid etching of the carbide substrates by corrosive fluorine atoms.

scholarly journals Growth of Oriented Thick Films of Gallium Nitride from the Melt

1999 ◽  
Vol 4 (S1) ◽  
pp. 227-232 ◽  
Author(s):  
Jeffrey S. Dyck ◽  
Kathleen Kash ◽  
Michael T. Grossner ◽  
Cliff C. Hayman ◽  
Alberto Argoitia ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Gallium Nitride ◽  
Microwave Plasma ◽  
Thick Films ◽  
Attractive Alternative ◽  
Plasma Synthesis ◽  
Atomic Nitrogen ◽  
X Ray Diffraction ◽  
Phonon Modes ◽  
X Ray

While significant strides have been made in the optimization of GaN-based devices on foreign substrates, a more attractive alternative would be homoepitaxy on GaN substrates. The primary motivation of this work is to explore the growth of thick films of GaN from the melt for the ultimate use as substrate material. We have previously demonstrated the synthesis of polycrystalline, wurtzitic gallium nitride and indium nitride by saturating gallium metal and indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Here we report the growth of thick oriented GaN layers using the same technique by the introduction of (0001) sapphire into the melt to serve as a substrate. The mechanism of this growth is not established, but may involve transport of the metal as a liquid film onto the sapphire and subsequent reaction with atomic nitrogen. The films were characterized by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. X-ray diffraction showed that the GaN films were oriented with their c-axes parallel to the sapphire c-axis. The TEM analysis confirmed the orientation and revealed a dislocation density of approximately 1010 cm−2. The E2 Raman active phonon modes were observed in the GaN films.

Residual Stresses Analysis in Diamond Layers Deposited on Various Substrates

1995 ◽  
Vol 383 ◽  
Author(s):  
D. Rats ◽  
L. Bimbault ◽  
L. Vandenbulcke ◽  
R. Herbin ◽  
K. F. Badawi
Keyword(s):  
Residual Stresses ◽  
Thermal Stresses ◽  
Film Growth ◽  
Microwave Plasma ◽  
Plasma Reactor ◽  
Diamond Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oxygen Gas ◽  
Deposition Conditions

ABSTRACTA major problem for diamond coating applications is that diamond films tend to exhibit poor adherence on many. substrates and typically disbond at thicknesses of the order of few micrometers due especially to residual stresses. Residual stresses in diamond are composed of thermal expansion mismatch stresses and intrinsic stresses induced during film growth. Diamond films were deposited in a classical microwave plasma reactor from hydrocarbon-hydrogen-oxygen gas mixtures. Thermal stresses were directly calculated from Hook's law. On silicon substrate, intrinsic stresses were deduced by difference from measurements of total stresses either by the curvature method or by X-ray diffraction using the sin 2ψ method. These investigations allow us to discuss the origin of the intrinsic stresses. The residual stress level was also investigated by Raman spectroscopy as a function of the deposition conditions and substrate materials (SiO2, Si3N4, Si, SiC, WC-Co, Mo and Ti-6A1-4V). We show that the thermal stresses are often preponderant.

Growth of Oriented Thick Films of Gallium Nitride From the Melt

1998 ◽  
Vol 537 ◽  
Author(s):  
Jeffrey S. Dyck ◽  
Kathleen Kash ◽  
Michael T. Grossner ◽  
Cliff C. Hayman ◽  
Alberto Argoitia ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Gallium Nitride ◽  
Microwave Plasma ◽  
Thick Films ◽  
Attractive Alternative ◽  
Plasma Synthesis ◽  
Atomic Nitrogen ◽  
X Ray Diffraction ◽  
Phonon Modes ◽  
X Ray

AbstractWhile significant strides have been made in the optimization of GaN-based devices on foreign substrates, a more attractive alternative would be homoepitaxy on GaN substrates. The primary motivation of this work is to explore the growth of thick films of GaN from the melt for the ultimate use as substrate material. We have previously demonstrated the synthesis of polycrystalline, wurtzitic gallium nitride and indium nitride by saturating gallium metal and indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Here we report the growth of thick oriented GaN layers using the same technique by the introduction of (0001) sapphire into the melt to serve as a substrate. The mechanism of this growth is not established, but may involve transport of the metal as a liquid film onto the sapphire and subsequent reaction with atomic nitrogen. The films were characterized by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. X-ray diffraction showed that the GaN films were oriented with their c-axes parallel to the sapphire c-axis. The TEM analysis confirmed the orientation and revealed a dislocation density of approximately 1010 cm-2. The E2 Raman active phonon modes were observed in the GaN films.

A Study of Stress in Microwave Plasma Chemical Vapor Deposited Diamond Films Using X-Ray Diffraction

1997 ◽  
Vol 3 (3) ◽  
pp. 129-135 ◽  
Author(s):  
M. Shahidul Haque ◽  
Hameed A. Naseem ◽  
Ajay P. Malshe ◽  
William D. Brown
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Chemical Vapor Deposited

Study on Preparation Process of ITO Nano-Powder by the Method of Ammonia Complexation

2012 ◽  
Vol 549 ◽  
pp. 441-444
Author(s):  
Li Da Sun ◽  
Du Shu Huang ◽  
Wei Liu ◽  
Yan Jiang ◽  
Rui Min Xiao ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Nucleation And Growth ◽  
X Ray Diffraction ◽  
Spectroscopy Analysis ◽  
X Ray ◽  
Nano Powder ◽  
Transmission Electron ◽  
Tin Oxides ◽  
Size And Morphology ◽  
Nucleation And Growth Mechanism

ITO (Indium Tin Oxides) nano-powder was prepared by the method of ammonia complexation. The chemical composition, morphology and crystal structure were characterized by X-ray diffraction (XRD) ,transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy analysis(XPS). Base on the nucleation and growth mechanism of the powder, the temperature of heat treatment impacting on size and morphology was discussed briefly. The results showed that the nano-ITO powder of particle size 20nm-40nm with well-pleasing particle shape and dispersion can be prepared at 800°C.

Selected Interlayer of Diamond Deposition on γ-TiAl Intermetallic Compounds Prepared by Microwave-Plasma Assisted CVD

2009 ◽  
Vol 631-632 ◽  
pp. 425-430
Author(s):  
Saleh B. Abu Suilik ◽  
Masayuki Ohshima ◽  
Toshimitsu Tetsui ◽  
Kazuhiro Hasezaki
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Diamond Coatings ◽  
X Ray Diffraction ◽  
Diamond Deposition ◽  
X Ray ◽  
Nano Crystalline ◽  
Scanning Electron

Several diamond coatings were performed on -TiAl substrates by a microwave-plasma assisted CVD, which were made directly to the substrate and indirectly to the TiC, Ti5Si3, Al2O3+TiO2 and Si layers on the substrate. The direct coatings suffered from severe delamination and cracks. The deposited layers on TiC and Ti5Si3 layers partially delaminated, while those on Al2O3+TiO2 and Si layers adhered well without delamination. All the diamond films deposited were characterized using scanning electron microscopy, Raman spectroscopy, and X-ray diffraction. Raman spectra showed that poly- and nano-crystalline diamond films were obtained for the coatings of -TiAl.

Morphology of heavily B-doped diamond films

1993 ◽  
Vol 8 (11) ◽  
pp. 2845-2857 ◽  
Author(s):  
Koichi Miyata ◽  
Kazuo Kumagai ◽  
Kozo Nishimura ◽  
Koji Kobashi
Keyword(s):  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates ◽  
Surface Morphologies

B-doped diamond films were synthesized by microwave plasma chemical vapor deposition using a mixture of methane (0.5% or 1.2%) and diborane (B2H6) below 50 ppm on either Si substrates or undoped diamond films that had been synthesized using 0.5% or 1.2% methane. The surface morphologies of the synthesized films were observed by Secondary Electron Microscopy, and the infrared absorption and Raman spectra were measured. It was found that when diborane concentration was low, B-doped films preferred (111) facets. On the other hand, high diborane concentrations resulted in a deposition of needle-like material that was identified as graphite by x-ray diffraction.

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