Laser Induced Chemical Etching of Composite Structure of Ferrite and Sendust

1988 ◽  
Vol 129 ◽  
Author(s):  
S. Nagatomo ◽  
M. Takai ◽  
Y. F. Lu ◽  
S. Namba
Keyword(s):  
Aqueous Solutions ◽  
Laser Irradiation ◽  
Composite Structure ◽  
Chemical Etching ◽  
Etching Rate ◽  
Al Alloy ◽  
Zn Ferrite ◽  
Ion Laser ◽  
Argon Ion ◽  
Thermochemical Reaction

ABSTRACTMaskless etching of the composite structure of Mn-Zn ferrite and sendust (Fe-Si-Al alloy) was performed by focused argon-ion-laser irradiation in a CCl4 atmosphere and aqueous solutions. Only a mixture of KOH and NaOH aqueous solutions was found to smoothly etch the composite structure by thermochemical reaction using laser irradiation. A maximum etching rate of 14 μm/sec was obtained for sendust-on-ferrite substrates.

Photoacoustic characterization of cw argon‐ion laser irradiation of Ge

1979 ◽  
Vol 35 (2) ◽  
pp. 121-124 ◽  
Author(s):  
J. F. McClelland ◽  
R. N. Kniseley
Keyword(s):  
Laser Irradiation ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

LASER-INDUCED PROCESS OF BINARY ALLOYING OF Ge–Se

1999 ◽  
Vol 06 (02) ◽  
pp. 219-223
Author(s):  
S. K. BHADRA ◽  
T. BANDYOPADHYAY ◽  
A. K. MAITI ◽  
K. GOSWAMI
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Composite Film ◽  
Laser Irradiation ◽  
Laser Fluence ◽  
Optical Absorption Spectra ◽  
Compound Formation ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

Thin films of chalcogenides are synthesized by CW argon ion laser irradiation of separate Ge/Se and Se/Te film sandwiches according to near stoichiometric proportions. The compound formation and crystalline transition of amorphous Se film are characterized by observing photomicrographs and optical absorption spectra. The composite film of bilayer Ge/Se does not form compounds but deposits as separate elements under equivalent laser fluence.

Transient heating and melting transformations in argon‐ion laser irradiation of polysilicon films

1993 ◽  
Vol 73 (12) ◽  
pp. 8088-8096 ◽  
Author(s):  
Xianfan Xu ◽  
Scott L. Taylor ◽  
Hee K. Park ◽  
Costas P. Grigoropoulos
Keyword(s):  
Laser Irradiation ◽  
Transient Heating ◽  
Argon Ion Laser ◽  
Polysilicon Films ◽  
Ion Laser ◽  
Argon Ion

scholarly journals Basic study on visible light activated dental composite resins - Polymerization and curing properties in argon ion laser irradiation.

1989 ◽  
Vol 17 (9) ◽  
pp. 642-651 ◽  
Author(s):  
Kaoru SUZUKI ◽  
Shigeyuki MASUTANI ◽  
Tetsuya TANIYAMA ◽  
Junji NAKATA ◽  
Takaya MASUTANI
Keyword(s):  
Visible Light ◽  
Laser Irradiation ◽  
Composite Resins ◽  
Dental Composite ◽  
Basic Study ◽  
Argon Ion Laser ◽  
Dental Composite Resins ◽  
Ion Laser ◽  
Argon Ion

Wet-chemical etching of Mn-Zn ferrite by focused Ar+-laser irradiation in H3PO4

1988 ◽  
Vol 47 (4) ◽  
pp. 319-325 ◽  
Author(s):  
Yong Feng Lu ◽  
M. Takai ◽  
S. Nagatomo ◽  
S. Namba
Keyword(s):  
Laser Irradiation ◽  
Chemical Etching ◽  
Zn Ferrite ◽  
Wet Chemical ◽  
Wet Chemical Etching

Design a System of Ar-Ion Laser Enhanced Anisotropic Etching

2007 ◽  
Author(s):  
Dianzhong Wen
Keyword(s):  
Laser Power ◽  
Etching Rate ◽  
Silicon Crystal ◽  
Anisotropic Etching ◽  
Structure Design ◽  
System Structure ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion ◽  
Considerable Complexity

This paper a System of argon-ion laser enhanced anisotropic etching is designed. A basic description of the structure and principle of the system will first be presented. This system can be described as enhanced etching rate of silicon. It also has the important advantage of not requiring the silicon is covered with a thick of oxide or other masked for any plane of silicon crystal that adds considerable complexity to the manufacture. When experiment temperature is 90 °C and KOH density is 34mol, an averaged instantaneous etching rate as high 25μm/min has been observed in silicon for a 4.6W input laser power, this etching rate register a 500% increase model on conventional anisotropic etching of silicon. Discussing the anisotropic etching rate of silicon dependence on the laser power and on the temperature are further. The experiment results show that the system structure design is reasonable and it can meet the requirement of every planes of silicon crystal etching, it can be used widely in variety of application aspects.

Liquid Phase Recrystallization of InSb by CW Laser Irradiation

1980 ◽  
Vol 1 ◽  
Author(s):  
D.H. Lee ◽  
G.L. Olson ◽  
L.D. Hess
Keyword(s):  
Liquid Phase ◽  
Laser Irradiation ◽  
Indium Antimonide ◽  
Depth Profiling ◽  
Compound Semiconductors ◽  
Polished Surface ◽  
Oxide Interface ◽  
Cw Laser ◽  
Ion Laser ◽  
Argon Ion

ABSTRACTIndium antimonide can be recrystallized epitaxially in the liquid phase by a scanning cw argon ion laser beam for improvements in crystal quality, surface morphology and oxide interface properties. Selected area diffraction measurements, Auger sputter depth profiling and dispersive x-ray analysis indicate that crystallization occurs epitaxially, and stoichiometry is preserved in the laser processed regions. Complete elimination of all asperities present in the original polished surface was observed subsequent to laser irradiation. Scanning electron microscopy and mechanical stylus measurements of the lateral profile of the laser irradiated region revealed the presence of a slight surface contour (convex meniscus) with a maximum change in height of 700 Å across a 64 μm recrystallized strip. In contrast to previous work with other compound semiconductors (e.g., GaAs), these results with InSb indicate that cw laser-induced melting and subsequent liquid phase epitaxial recrystallization can be used to provide improved materials properties of particular compound semiconductors.

Partial Photoresolution of Some Chromium (III) Complexes of Phenanthroline and Bipyridine Using Circularly Polarized Laser Irradiation

1972 ◽  
Vol 50 (20) ◽  
pp. 3381-3383 ◽  
Author(s):  
Noel A. P. Kane-Maguire ◽  
Cooper H. Langford
Keyword(s):  
Circular Dichroism ◽  
Laser Irradiation ◽  
Polarized Light ◽  
Steady States ◽  
Circularly Polarized Light ◽  
Circularly Polarized ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion ◽  
Circular Dichroïsm

Partial photoresolution of [Formula: see text], Cr(C2O4)2phen−, and [Formula: see text] by irradiation with circularly polarized light from an argon ion laser and 496.5 or 514.5 nm is reported. Steady states corresponding to 1–2% resolution are achieved. They are in agreement with predictions from known circular dichroism and the assumption that differential isomerization is simply a consequence of differential absorptivity of the enantiomers.

Laser Chemical Etching of Metals in Neutral Salt Solutions

1987 ◽  
Vol 101 ◽  
Author(s):  
M. Datta ◽  
L. T. Romankiw ◽  
D. R. Vigliotti ◽  
R. J. von Gutfeld
Keyword(s):  
Stainless Steel ◽  
Chemical Etching ◽  
Potassium Sulfate ◽  
Neutral Salt ◽  
Salt Solutions ◽  
Argon Ion Laser ◽  
First Results ◽  
Ion Laser ◽  
Maskless Patterning ◽  
Argon Ion

ABSTRACTWe report the first results of experiments using a focused argon ion laser to locally induce chemical etching of steel and stainless steel in neutral salt solutions for maskless patterning. The solutions include sodium chloride, sodium nitrate and potassium sulfate. Vertical etch rates up to 4 microns/s are observed.

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