Liquid Phase Recrystallization of InSb by CW Laser Irradiation

1980 ◽  
Vol 1 ◽  
Author(s):  
D.H. Lee ◽  
G.L. Olson ◽  
L.D. Hess
Keyword(s):  
Liquid Phase ◽  
Laser Irradiation ◽  
Indium Antimonide ◽  
Depth Profiling ◽  
Compound Semiconductors ◽  
Polished Surface ◽  
Oxide Interface ◽  
Cw Laser ◽  
Ion Laser ◽  
Argon Ion

ABSTRACTIndium antimonide can be recrystallized epitaxially in the liquid phase by a scanning cw argon ion laser beam for improvements in crystal quality, surface morphology and oxide interface properties. Selected area diffraction measurements, Auger sputter depth profiling and dispersive x-ray analysis indicate that crystallization occurs epitaxially, and stoichiometry is preserved in the laser processed regions. Complete elimination of all asperities present in the original polished surface was observed subsequent to laser irradiation. Scanning electron microscopy and mechanical stylus measurements of the lateral profile of the laser irradiated region revealed the presence of a slight surface contour (convex meniscus) with a maximum change in height of 700 Å across a 64 μm recrystallized strip. In contrast to previous work with other compound semiconductors (e.g., GaAs), these results with InSb indicate that cw laser-induced melting and subsequent liquid phase epitaxial recrystallization can be used to provide improved materials properties of particular compound semiconductors.

Photoacoustic characterization of cw argon‐ion laser irradiation of Ge

1979 ◽  
Vol 35 (2) ◽  
pp. 121-124 ◽  
Author(s):  
J. F. McClelland ◽  
R. N. Kniseley
Keyword(s):  
Laser Irradiation ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

Laser Induced Chemical Etching of Composite Structure of Ferrite and Sendust

1988 ◽  
Vol 129 ◽  
Author(s):  
S. Nagatomo ◽  
M. Takai ◽  
Y. F. Lu ◽  
S. Namba
Keyword(s):  
Aqueous Solutions ◽  
Laser Irradiation ◽  
Composite Structure ◽  
Chemical Etching ◽  
Etching Rate ◽  
Al Alloy ◽  
Zn Ferrite ◽  
Ion Laser ◽  
Argon Ion ◽  
Thermochemical Reaction

ABSTRACTMaskless etching of the composite structure of Mn-Zn ferrite and sendust (Fe-Si-Al alloy) was performed by focused argon-ion-laser irradiation in a CCl4 atmosphere and aqueous solutions. Only a mixture of KOH and NaOH aqueous solutions was found to smoothly etch the composite structure by thermochemical reaction using laser irradiation. A maximum etching rate of 14 μm/sec was obtained for sendust-on-ferrite substrates.

LASER-INDUCED PROCESS OF BINARY ALLOYING OF Ge–Se

1999 ◽  
Vol 06 (02) ◽  
pp. 219-223
Author(s):  
S. K. BHADRA ◽  
T. BANDYOPADHYAY ◽  
A. K. MAITI ◽  
K. GOSWAMI
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Composite Film ◽  
Laser Irradiation ◽  
Laser Fluence ◽  
Optical Absorption Spectra ◽  
Compound Formation ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

Thin films of chalcogenides are synthesized by CW argon ion laser irradiation of separate Ge/Se and Se/Te film sandwiches according to near stoichiometric proportions. The compound formation and crystalline transition of amorphous Se film are characterized by observing photomicrographs and optical absorption spectra. The composite film of bilayer Ge/Se does not form compounds but deposits as separate elements under equivalent laser fluence.

Transient heating and melting transformations in argon‐ion laser irradiation of polysilicon films

1993 ◽  
Vol 73 (12) ◽  
pp. 8088-8096 ◽  
Author(s):  
Xianfan Xu ◽  
Scott L. Taylor ◽  
Hee K. Park ◽  
Costas P. Grigoropoulos
Keyword(s):  
Laser Irradiation ◽  
Transient Heating ◽  
Argon Ion Laser ◽  
Polysilicon Films ◽  
Ion Laser ◽  
Argon Ion

scholarly journals Basic study on visible light activated dental composite resins - Polymerization and curing properties in argon ion laser irradiation.

1989 ◽  
Vol 17 (9) ◽  
pp. 642-651 ◽  
Author(s):  
Kaoru SUZUKI ◽  
Shigeyuki MASUTANI ◽  
Tetsuya TANIYAMA ◽  
Junji NAKATA ◽  
Takaya MASUTANI
Keyword(s):  
Visible Light ◽  
Laser Irradiation ◽  
Composite Resins ◽  
Dental Composite ◽  
Basic Study ◽  
Argon Ion Laser ◽  
Dental Composite Resins ◽  
Ion Laser ◽  
Argon Ion

Laser-Assisted Liquid-Phase Etching of Copper Conductors and its Application to Advanced Integrated Circuit Interconnect

1987 ◽  
Vol 101 ◽  
Author(s):  
Robert F. Miracky ◽  
Kantesh Doss
Keyword(s):  
Liquid Phase ◽  
Integrated Circuit ◽  
Elevated Temperatures ◽  
Dilute Solution ◽  
Practical Applications ◽  
Selective Area ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Etch Rates ◽  
Argon Ion

ABSTRACTWe have demonstrated a method f or the selective-area, laser-assisted liquid-phase etching of 6-μm thick copper conductors, by focusing the 488-μm line of an argon ion laser onto the surface of samples immersed in a dilute solution containing sulfuric acid and hydrogen peroxide. Average etch rates of up to 5.0 μm/s have been achieved, in the process of completely severing 14-μm wide copper lines, with little attendant damage to the underlying layer of polyimide. Two etchant formulations were identified which exhibited large etch rates at elevated temperatures and low enough background etch rates (approximately 1 μm/hr at 0 °C) to be useful in practical applications.

Partial Photoresolution of Some Chromium (III) Complexes of Phenanthroline and Bipyridine Using Circularly Polarized Laser Irradiation

1972 ◽  
Vol 50 (20) ◽  
pp. 3381-3383 ◽  
Author(s):  
Noel A. P. Kane-Maguire ◽  
Cooper H. Langford
Keyword(s):  
Circular Dichroism ◽  
Laser Irradiation ◽  
Polarized Light ◽  
Steady States ◽  
Circularly Polarized Light ◽  
Circularly Polarized ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion ◽  
Circular Dichroïsm

Partial photoresolution of [Formula: see text], Cr(C2O4)2phen−, and [Formula: see text] by irradiation with circularly polarized light from an argon ion laser and 496.5 or 514.5 nm is reported. Steady states corresponding to 1–2% resolution are achieved. They are in agreement with predictions from known circular dichroism and the assumption that differential isomerization is simply a consequence of differential absorptivity of the enantiomers.

Preferential Sputtering of Ni3Al Single Crystals Studied Using Atom-Probe Field-Ion Microscopy and XPS

1981 ◽  
Vol 39 ◽  
pp. 16-17
Author(s):  
M.P. Thomas ◽  
A.R. Waugh ◽  
M.J. Southon ◽  
Brian Ralph
Keyword(s):  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Depth Profiling ◽  
Analytical Techniques ◽  
Atom Probe ◽  
Probe Field ◽  
Preferential Sputtering ◽  
Argon Ion Bombardment ◽  
Argon Ion

It is well known that ion-induced sputtering from numerous multicomponent targets results in marked changes in surface composition (1). Preferential removal of one component results in surface enrichment in the less easily removed species. In this investigation, a time-of-flight atom-probe field-ion microscope A.P. together with X-ray photoelectron spectroscopy XPS have been used to monitor alterations in surface composition of Ni3Al single crystals under argon ion bombardment. The A.P. has been chosen for this investigation because of its ability using field evaporation to depth profile through a sputtered surface without the need for further ion sputtering. Incident ion energy and ion dose have been selected to reflect conditions widely used in surface analytical techniques for cleaning and depth-profiling of samples, typically 3keV and 1018 - 1020 ion m-2.

Optical properties of benzene and derivatives by the single beam thermal lens technique

2017 ◽  
Vol 26 (02) ◽  
pp. 1750025 ◽  
Author(s):  
M. K. Biswas ◽  
P. K. Das ◽  
E. Hoque ◽  
S. M. Sharafuddin ◽  
S. K. Das ◽  
...  
Keyword(s):  
Thermal Lens ◽  
Continuous Wave ◽  
Refractive Index Change ◽  
Optical Nonlinearity ◽  
Index Change ◽  
Single Beam ◽  
Cw Laser ◽  
Ion Laser ◽  
Benzene Toluene ◽  
Long Pulse

The present work studies the optical nonlinearity exhibited by the material (for Continuous Wave (CW) laser or long pulse) due to the change in thermal properties of the material on illumination. Thermal lens (TL) technique has been used to measure the refractive index change due to the formation of TL along with other thermo-optic properties of the material in solution. A CW Ar-ion laser has been used as light source and the laser beam was chopped at 25[Formula: see text]Hz frequency to obtain 12[Formula: see text]ms pulse to observe the formation of the TL within the sample. The [Formula: see text] value have been calculated by the TL technique for Benzene, Toluene and Dimethylaniline (DMA) in toluene and Benzene. The [Formula: see text] value is found to be in the order of 10[Formula: see text] to 10[Formula: see text][Formula: see text]cm2[Formula: see text]W[Formula: see text].

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