scholarly journals THE FORWARD RAMAN SCATTERING OF CIRCULARLY POLARIZED KrF EXCIMER LASER BEAM IN HYDROGEN GAS

1983 ◽  
Vol 32 (9) ◽  
pp. 1211
Author(s):  
ZHANG FU-GENG
Keyword(s):  
Raman Scattering ◽  
Laser Beam ◽  
Excimer Laser ◽  
Hydrogen Gas ◽  
Circularly Polarized ◽  
Krf Excimer Laser

Single pulse vibrational Raman scattering by a broadband KrF excimer laser in a hydrogen–air flame

1990 ◽  
Vol 29 (15) ◽  
pp. 2325 ◽  
Author(s):  
Robert W. Pitz ◽  
Joseph A. Wehrmeyer ◽  
J. M. Bowling ◽  
Tsarng-Sheng Cheng
Keyword(s):  
Raman Scattering ◽  
Excimer Laser ◽  
Single Pulse ◽  
Krf Excimer Laser

Excimer Laser Induced Etching of Silicon-Carbide

1988 ◽  
Vol 129 ◽  
Author(s):  
M. Murahara ◽  
H. Arai ◽  
T. Matsumura
Keyword(s):  
Absorption Band ◽  
Laser Beam ◽  
Excimer Laser ◽  
Etching Rate ◽  
Laser Beams ◽  
Absorption Factor ◽  
Total Flow ◽  
Krf Laser ◽  
Krf Excimer Laser ◽  
Laser Induced Etching

ABSTRACTResistless photoetching of SiC was performed by using XeF and KrF excimer laser beams. In this method, ClF3 gas was used for etchant. C1F3 gas has a unique absorption band in the range of 300- 430 nm. The strongest absorption band corresponds to the wavelength of the XeF laser (350 nm). So C1F3 gas is decomposed effectively. On the other hand, the absorption factor of SiC is about 30% in the range of 200-400 nm, and the bonding energy of SiC is lower than the photon energy of the KrF laser beam. For these reasons, it is possible to cut the bond of SiC directly. Thus, two laser beams were used. Fluence of the KrF laser beam was 200 mJ/cm2, of the XeF, 50 mJ/cm2. Total flow rates through the cell were 0.05 1/min. We can fabricated the etched feature of reticle pattern by reductive projection. Line and space was 10 μm and etching rate was 50Å/pulse.

Study of the structure and parameters of a KrF excimer laser beam

2012 ◽  
Vol 57 (12) ◽  
pp. 1681-1686 ◽  
Author(s):  
Yu. M. Zadiranov ◽  
S. G. Kalmykov ◽  
M. E. Sasin ◽  
P. Yu. Serdobintsev
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Krf Excimer Laser

Microfabrication of Polymers Using KrF Excimer Laser Beam

2006 ◽  
Vol 326-328 ◽  
pp. 115-118
Author(s):  
Dong Sig Shin ◽  
Jae Hoon Lee ◽  
Jeong Suh
Keyword(s):  
Laser Ablation ◽  
Binding Energy ◽  
Laser Beam ◽  
Excimer Laser ◽  
Polymer Chains ◽  
Laser Beams ◽  
Adhesive Tape ◽  
Uv Laser ◽  
Laser Process ◽  
Krf Excimer Laser

Pulsed UV laser beams, which are widely used in the processing of polymers, offer many advantages in the field of polymer production, primarily because their photon energy is higher than the binding energy of the polymer. In particular, the fabrication of polymers with an excimer laser process is faster and more convenient than with other processes. Nevertheless, some problems occur in the precision microprocessing of polymers, including the formation and deposition of surface debris, which is produced from the breakdown of either polymer chains or radical bonds. In the present work, a process for eliminating carbonized surface debris contamination generated by the laser ablation of a polymer was developed. The proposed approach for removing surface debris utilizes an erasable ink pasted on the polymer. The surface debris ejected from the polymer is then combined with the ink layer on the polymer. Finally, both the surface debris and the ink layer can be removed using adhesive tape.

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