Monolithic GaAs/Si Integration

1988 ◽  
Vol 126 ◽  
Author(s):  
George W. Turner ◽  
H. K. Choi ◽  
J. P. Mattia ◽  
C. L. Chen ◽  
S. J. Eglash ◽  
...  
Keyword(s):  
Optical Interconnects ◽  
Diode Lasers ◽  
Logic Circuits ◽  
High Resistivity ◽  
Molecular Beam Epitaxy Growth ◽  
Circuit Performance ◽  
Monolithically Integrated ◽  
Si Substrates ◽  
Cw Operation ◽  
Photoconductive Detectors

ABSTRACTThe recent demonstrations of room-temperature cw operation of diode lasers fabricated in GaAs/AlGaAs layers grown on Si wafers have encouraged efforts to develop monolithic GaAs/Si integration technology for applications such as optical interconnects between VLSI subsystems. This paper summarizes our current work in this area, which is focused on the development of a highspeed, MSI-scale monolithic GaAs/Si test chip that integrates Si MOSFET circuits with diode lasers, LEDs, photoconductive detectors, and MESFET logic circuits fabricated in GaAs/AlGaAs layers grown by molecular beam epitaxy. Growth issues and processing considerations that affect device and circuit performance are addressed, and the characteristics of LEDs monolithically integrated with Si driver circuits and of GaAs microwave MESFETs fabricated on high-resistivity Si substrates are reported.

Monolithic GaAs/Si Integration

1988 ◽  
Vol 116 ◽  
Author(s):  
George W. Turner ◽  
H. K. Choi ◽  
J. P. Mattia ◽  
C. L. Chen ◽  
S. J. Eglash ◽  
...  
Keyword(s):  
Optical Interconnects ◽  
Diode Lasers ◽  
Logic Circuits ◽  
High Resistivity ◽  
Molecular Beam Epitaxy Growth ◽  
Circuit Performance ◽  
Monolithically Integrated ◽  
Si Substrates ◽  
Cw Operation ◽  
Photoconductive Detectors

AbstractThe recent demonstrations of room-temperature cw operation of diode lasers fabricated in GaAs/AlGaAs layers grown on Si wafers have encouraged efforts to develop monolithic GaAs/Si integration technology for applications such as optical interconnects between VLSI subsystems. This paper summarizes our current work in this area, which is focused on the development of a highspeed, MSI-scale monolithic GaAs/Si test chip that integrates Si MOSFET circuits with diode lasers, LEDs, photoconductive detectors, and MESFET logic circuits fabricated in GaAs/AlGaAs layers grown by molecular beam epitaxy. Growth issues and processing considerations that affect device and circuit performance are addressed, and the characteristics of LEDs monolithically integrated with Si driver circuits and of GaAs microwave MESFETs fabricated on high-resistivity Si substrates are reported.

CW operation of widely and continuously tunable micromachined-coupled-cavity diode lasers

1986 ◽  
Vol 22 (17) ◽  
pp. 919 ◽  
Author(s):  
R.K. Defreez ◽  
J. Puretz ◽  
R.A. Elliott ◽  
J. Orloff ◽  
L.W. Swanson
Keyword(s):  
Diode Lasers ◽  
Cw Operation ◽  
Coupled Cavity

V-8 MBE homostructure PbTe diode lasers with CW operation up to 100 K

1977 ◽  
Vol 24 (9) ◽  
pp. 1214-1214 ◽  
Author(s):  
J.N. Walpole ◽  
S.H. Groves ◽  
T.C. Harman
Keyword(s):  
Diode Lasers ◽  
Cw Operation

1.3 µm CW Operation of GaInAsP/InP DH Diode Lasers at Room Temperature

1977 ◽  
Vol 16 (7) ◽  
pp. 1273-1274 ◽  
Author(s):  
Kunishige Oe ◽  
Seigo Ando ◽  
Koichi Sugiyama
Keyword(s):  
Room Temperature ◽  
Diode Lasers ◽  
Cw Operation

Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates

2009 ◽  
Vol 15 (3) ◽  
pp. 716-723 ◽  
Author(s):  
J. Tatebayashi ◽  
A. Jallipalli ◽  
M.N. Kutty ◽  
Shenghong Huang ◽  
K. Nunna ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Monolithically Integrated ◽  
Si Substrates

CW operation of monolithic arrays of surface-emitting AlGaAs diode lasers with dry-etched vertical facets and parabolic deflecting mirrors

1993 ◽  
Vol 5 (10) ◽  
pp. 1146-1149 ◽  
Author(s):  
J.P. Donnelly ◽  
W.D. Goodhue ◽  
C.A. Wang ◽  
R.J. Bailey ◽  
G.A. Lincoln ◽  
...  
Keyword(s):  
Diode Lasers ◽  
Cw Operation

Development of μ-Fluorescent and Diffracted X-Ray Spectrometer with a Fine Focused X-Ray Beam and its Application for Ulsi Microanalysis

1995 ◽  
Vol 39 ◽  
pp. 155-164
Author(s):  
Naoki Yamamoto
Keyword(s):  
The Other ◽  
High Resistivity ◽  
Wall Surface ◽  
Glass Capillary ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Fine Glass ◽  
Crystal Phases ◽  
Membrane Type

A fluorescent and diffracted X-ray spectrometer with an X-ray sub-micron beam was developed for the analysis of stress, crystal structure, and contamination in micro-regions of ULSIs. A fine glass capillary with a parabolic cross-sectional inner wall surface was made to form a micro X-ray beam. A micro-focus X-ray generator with a membrane-type target was also developed for use with the capillary. The equipment was used to analyze the crystal phases of Ti silicide fine lines and the strains in Al interconnections.The resistance of Ti-silicide lines increases the line width narrows under about 0.5 μrn. This is because of the growth of crystal phases of TiSi2(C49) and TiSi(B27) with high resistivity ﹛60 to 100 μΩ-cm).Hillocks of Al grow at line edges when Al layers are compressed by Si substrates and surrounding insulating layers. On the other hand, when the Al is extended by these layers, voids form in the AI lines.

scholarly journals Monolithically Integrated Diffused Silicon Two-Zone Heaters for Silicon-Pyrex Glass Microreactors for Production of Nanoparticles: Heat Exchange Aspects

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 818
Author(s):  
Milena Rašljić Rafajilović ◽  
Katarina Radulović ◽  
Milče M. Smiljanić ◽  
Žarko Lazić ◽  
Zoran Jakšić ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon Wafer ◽  
Titanium Dioxide Nanoparticles ◽  
Pyrex Glass ◽  
High Resistivity ◽  
Glass Wafer ◽  
Monolithically Integrated ◽  
Different Temperatures ◽  
And Performance ◽  
P Type

We present the design, simulation, fabrication and characterization of monolithically integrated high resistivity p-type boron-diffused silicon two-zone heaters in a model high temperature microreactor intended for nanoparticle fabrication. We used a finite element method for simulations of the heaters’ operation and performance. Our experimental model reactor structure consisted of a silicon wafer anodically bonded to a Pyrex glass wafer with an isotropically etched serpentine microchannels network. We fabricated two separate spiral heaters with different temperatures, mutually thermally isolated by barrier apertures etched throughout the silicon wafer. The heaters were characterized by electric measurements and by infrared thermal vision. The obtained results show that our proposed procedure for the heater fabrication is robust, stable and controllable, with a decreased sensitivity to random variations of fabrication process parameters. Compared to metallic or polysilicon heaters typically integrated into microreactors, our approach offers improved control over heater characteristics through adjustment of the Boron doping level and profile. Our microreactor is intended to produce titanium dioxide nanoparticles, but it could be also used to fabricate nanoparticles in different materials as well, with various parameters and geometries. Our method can be generally applied to other high-temperature microsystems.

Design of a Ku-band Wilkinson power divider on surface-stabilized high-resistivity Si substrates

2005 ◽  
Vol 44 (5) ◽  
pp. 436-439 ◽  
Author(s):  
Taeksoo Ji ◽  
Hargsoon Yoon ◽  
Jose K. Abraham ◽  
Vijay K. Varadan
Keyword(s):  
Power Divider ◽  
High Resistivity ◽  
Si Substrates ◽  
Wilkinson Power Divider ◽  
Ku Band
Sign in / Sign up

Export Citation Format

Share Document