Design of a Ku-band Wilkinson power divider on surface-stabilized high-resistivity Si substrates

2005 ◽  
Vol 44 (5) ◽  
pp. 436-439 ◽  
Author(s):  
Taeksoo Ji ◽  
Hargsoon Yoon ◽  
Jose K. Abraham ◽  
Vijay K. Varadan
Keyword(s):  
Power Divider ◽  
High Resistivity ◽  
Si Substrates ◽  
Wilkinson Power Divider ◽  
Ku Band

Design of X-Ku Band Wilkinson Power Divider Using Synthetic Quasi-TEM Transmission Line

2014 ◽  
Vol 1044-1045 ◽  
pp. 287-290 ◽  
Author(s):  
Chih Chiang Chen ◽  
Jhen Jie Cin
Keyword(s):  
Transmission Line ◽  
Insertion Loss ◽  
Return Loss ◽  
Power Divider ◽  
Two Dimensional ◽  
Input Output ◽  
Line Structure ◽  
Wilkinson Power Divider ◽  
Conducting Strip ◽  
Ku Band

This work presents a miniaturized X-Ku band Wilkinson power divider (WPD), based on 0.18μm 1P6M CMOS foundry technology. The proposed two-dimensional transmission line, called a complementary-conducting-strip (CCS), replaces the conventional microstrip (MS) line structure. With this CCS structure, the occupying area of this novel divider is about 96 % smaller than that of the conventional MS WPD. The prototype occupies an area of only 345 μm by 360 μm without input/output (I/O) pads. The new WPD has an insertion loss of 4.9 dB, an isolation of 13 dB and a return loss 12 dB between 8 GHz and 18 GHz.

Multisection Combined Gysel-Wilkinson Power Divider With Arbitrary Power Division Ratios

2021 ◽  
pp. 1-1
Author(s):  
Reza Nemati ◽  
Shokrollah Karimian ◽  
Hamed Shahi ◽  
Nasser Masoumi ◽  
Safieddin Safavi-Naeini
Keyword(s):  
Power Divider ◽  
Arbitrary Power ◽  
Wilkinson Power Divider
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