scholarly journals A monolithically integrated detector-preamplifier on high-resistivity silicon

1990 ◽  
Vol 37 (2) ◽  
pp. 463-468 ◽  
Author(s):  
S. Holland ◽  
H. Spieler
Keyword(s):  
High Resistivity ◽  
Monolithically Integrated ◽  
Integrated Detector ◽  
High Resistivity Silicon

JFET FOR COMPLETELY DEPLETED HIGH RESISTIVITY SILICON

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-363-C4-366 ◽  
Author(s):  
V. RADEKA ◽  
P. REHAK ◽  
S. RESCIA ◽  
E. GATTI ◽  
A. LONGONI ◽  
...  
Keyword(s):  
High Resistivity ◽  
High Resistivity Silicon

Beamforming Lens Antenna on a High Resistivity Silicon Wafer for 60 GHz WPAN

2010 ◽  
Vol 58 (3) ◽  
pp. 706-713 ◽  
Author(s):  
Woosung Lee ◽  
Jaeheung Kim ◽  
Choon Sik Cho ◽  
Young Joong Yoon
Keyword(s):  
Silicon Wafer ◽  
High Resistivity ◽  
60 Ghz ◽  
Lens Antenna ◽  
High Resistivity Silicon

Current assisted photonic mixing devices fabricated on high resistivity silicon

2008 ◽  
Author(s):  
L. Pancheri ◽  
D. Stoppa ◽  
N. Massari ◽  
M. Malfatti ◽  
C. Piemonte ◽  
...  
Keyword(s):  
High Resistivity ◽  
High Resistivity Silicon

Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
High Resistivity Silicon

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

scholarly journals Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes

Materials ◽  
2011 ◽  
Vol 4 (12) ◽  
pp. 2092-2107 ◽  
Author(s):  
Agata Sakic ◽  
Tom L. M. Scholtes ◽  
Wiebe de Boer ◽  
Negin Golshani ◽  
Jaber Derakhshandeh ◽  
...  
Keyword(s):  
High Resistivity ◽  
Epitaxial Layers ◽  
High Resistivity Silicon ◽  
Low Capacitance
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