Mocvd Growth of GaAs on Si

1988 ◽  
Vol 116 ◽  
Author(s):  
Masahiro Akiyama ◽  
Takash Ueda ◽  
Sachiko Onozawa
Keyword(s):  
High Temperatures ◽  
Growth Temperature ◽  
Room Temperature ◽  
Gaas Layer ◽  
Grown Layer ◽  
Gaas On Si ◽  
Mocvd Growth ◽  
Initial Stage ◽  
Step Growth ◽  
Domain Property

AbstractThe initial stage of the growth of GaAs on Si by, MOCVD, the reduction of the residual dislocations by annealing at high temperatures and the dependence of the growth temperature on the stress in the GaAs layer were studied. The density and the size of deposited GaAs islands at the initial stage of the growth in the two-step growth sequence strongly affected the domain property of the subsequently grown layer. For reducing the residual dislocations by annealing at high temperatures, to repeat the growth and the annealing was more effective method compared with the other annealing methods we tried. The stress in the GaAs layers showed a constant value independently of the growth temperature and the value was related to the thermal expansion between room temperature and about 350°C.

Determination of Antiphase Domain Boundary Annihilation Rate in GaAs on Si(001) and the Influence of MOCVD Growth Temperature

2016 ◽  
Vol 72 (4) ◽  
pp. 335-340 ◽  
Author(s):  
C. S. C. Barrett ◽  
T. P. Martin ◽  
X.-Y. Bao ◽  
P. Martin ◽  
E. Sanchez ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Domain Boundary ◽  
Antiphase Domain ◽  
Annihilation Rate ◽  
Gaas On Si ◽  
Mocvd Growth

Initial stage of MOCVD growth of GaAs on Si

1988 ◽  
Vol 93 (1-4) ◽  
pp. 443-448 ◽  
Author(s):  
Sachiko Onozawa ◽  
Takashi Ueda ◽  
Masahiro Akiyama
Keyword(s):  
Gaas On Si ◽  
Mocvd Growth ◽  
Initial Stage

The Two-Step Growth Mechanism of MOCVD GaAs/Si

1987 ◽  
Vol 91 ◽  
Author(s):  
Koichi Ishida
Keyword(s):  
Buffer Layer ◽  
Growth Mechanism ◽  
Growth Temperature ◽  
Direct Consequence ◽  
Gaas Layer ◽  
Misfit Dislocations ◽  
Misfit Stress ◽  
Mocvd Growth ◽  
Transmission Electron ◽  
Stress Free State

AbstractThe growth mechanism and lattice defects are studied for GaAs/Si grown by the two-step MOCVD growth procedure using transmission electron microscopy (TEM). The large misfit stress between GaAs and Si is relieved by misfit dislocations at the GaAs/Si interface, which are introduced during epitaxial regrowth of the thin (<200A) polycrystalline buffer layer grown at 400∼450°C. The regrown buffer layer is relaxed to a nearly stress free state, and therefore a thick GaAs layer can subsequently be grown at the higher growth temperature (∼750°C). The tensile stress in GaAs at room temperature is shown to be a direct consequence of the misfit stress relaxation at the higher growth temperature. TEM revealed high density (<106cm−2) of the threading dislocations in the GaAs layer, contrary to the results of molten KOH etching.

Initial Stages of MOCVD Growth of Gallium Nitride Using a Multi-Step Growth Approach

1997 ◽  
Vol 468 ◽  
Author(s):  
J. T. Kobayashi ◽  
N. P. Kobayashi ◽  
P. D. Dapkus ◽  
X. Zhang ◽  
D. H. Rich
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Mocvd Growth ◽  
Initial Stage ◽  
Step Growth ◽  
Van Der Pauw ◽  
Growth Approach

ABSTRACTA multilayer buffer layer approach to GaN growth has been developed in which the thermal desorption and mass transport of low temperature buffer layer are minimized by deposition of successive layers at increased temperatures. High quality GaN with featureless surface morphology has been grown on (0001) sapphire substrate by metalorganic chemical vapor deposition using this multilayer buffer layer approach. The lateral growth and coalescence of truncated 3D islands (TTIs) nucleated on low temperature buffer layers at the initial stage of overlayer growth is affected by the thickness of the final buffer layer on which nucleation of TTIs takes place. The effect of the thickness of this buffer layer on the quality of GaN is studied by using scanning electron microscopy, van der Pauw geometry Hall measurements and cathodoluminescence and an optimum value of 400Å is obtained.

Undoped GaAs with a Low Electron Concentration Grown on Si by Mocvd

1990 ◽  
Vol 198 ◽  
Author(s):  
Shinji Nozaki ◽  
A. T. Wu ◽  
J. J. Murray ◽  
T. George ◽  
M. Umeno
Keyword(s):  
Electron Concentration ◽  
Gaas Layer ◽  
High Resistivity ◽  
Si Substrate ◽  
Mocvd Reactor ◽  
Mocvd Growth ◽  
Step Growth ◽  
Gas Phase Transport ◽  
Phase Transport ◽  
Undoped Gaas

ABSTRACTWe have successfully grown undoped GaAs of very high resistivity on Si by MOCVD. The back and side edges of the Si substrate were coated with a Si3N4/SiO2 stacked layer to suppress Si incorporation Into GaAs by the gas phase transport mechanism during MOCVD growth. A 3- μm-thick GaAs layer was grown on this Si substrate at 750 °C in an atmospheric MOCVD reactor using the two-step growth technique. The electron concentration measured by a Polaron C-V profiler is 3xl0l4 cm−3, as low as that of GaAs grown on GaAs substrate, up to the depth of 1.5 μm from the surface.

Effects of Growth Temperature on MOCVD-Grown GaAs-ON-Si

1989 ◽  
Vol 148 ◽  
Author(s):  
S. Nozaki ◽  
N. Noto ◽  
M. Okada ◽  
T. Egawa ◽  
T. Soga ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Growth Temperature ◽  
Lower Growth ◽  
Rocking Curve ◽  
X Ray ◽  
Gaas On Si ◽  
Good Surface ◽  
Step Growth ◽  
Higher Temperature ◽  
Lower Growth Temperature

ABSTRACTEffects of growth temperature on crystallinity and surface morphology of MOCVD-grown GaAs-on-Si were studied. The FWHM of the (400) x-ray peak in the rocking curve of GaAs-on-Si reduces from 340 to 230 arcs with increasing growth temperature from 650 to 700°C, but further increase of growth temperature does not significantly decrease the FWHM. The surface morphology of GaAs-on-Si grown at higher temperature is scaly and rough. Lower growth temperature is desirable to obtain GaAs-on-Si with good surface morphology. In order to eliminate the trade-off between crystallinity and surface morphology, the three-step growth process is proposed.

Anisotropy of interfacial defects in the initial stage of MOVPE GaAs growth On Si

1990 ◽  
Vol 48 (4) ◽  
pp. 592-593
Author(s):  
C. Vannuffel ◽  
C. Schiller ◽  
J. P. Chevalier
Keyword(s):  
Early Stage ◽  
Threading Dislocations ◽  
Mbe Growth ◽  
Detailed Mechanism ◽  
Si Substrates ◽  
Initial Stage ◽  
Interfacial Defects ◽  
Interfacial Dislocations ◽  
Step Growth ◽  
Essential Problem

Recently, interest has focused on the epitaxy of GaAs on Si as a promising material for electronic applications, potentially for integration of optoelectronic devices on silicon wafers. The essential problem concerns the 4% misfit between the two materials, and this must be accommodated by a network of interfacial dislocations with the lowest number of threading dislocations. It is thus important to understand the detailed mechanism of the formation of this network, in order to eventually reduce the dislocation density at the top of the layers.MOVPE growth is carried out on slightly misoriented, (3.5°) from (001) towards , Si substrates. Here we report on the effect of this misorientation on the interfacial defects, at a very early stage of growth. Only the first stage, of the well-known two step growth process, is thus considered. Previously, we showed that full substrate coverage occured for GaAs thicknesses of 5 nm in contrast to MBE growth, where substantially greater thicknesses are required.

scholarly journals S235JRC+C Steel Response Analysis Subjected to Uniaxial Stress Tests in the Area of High Temperatures and Material Fatigue

2021 ◽  
Vol 13 (10) ◽  
pp. 5675
Author(s):  
Josip Brnic ◽  
Marino Brcic ◽  
Sebastian Balos ◽  
Goran Vukelic ◽  
Sanjin Krscanski ◽  
...  
Keyword(s):  
High Temperatures ◽  
Room Temperature ◽  
Uniaxial Stress ◽  
Fatigue Tests ◽  
Experimental Investigations ◽  
Response Analysis ◽  
Stress Tests ◽  
Staircase Method ◽  
Mechanical Fatigue ◽  
Proper Material

Knowledge of the properties and behavior of materials under certain working conditions is the basis for the selection of the proper material for the design of a new structure. This paper deals with experimental investigations of the mechanical properties of unalloyed high quality steel S235JRC + C (1.0122) and its behavior under conditions of high temperatures, creep and mechanical fatigue. The response of the material at high temperatures (20–700 °C) is shown in the form of engineering stress-strain diagrams while that at creep behavior (400–600 °C) is shown in the form of creep curves. Furthermore, based on uniaxial fully reversed mechanical fatigue tests (R=−1), a stress-life (S-N) fatigue diagram has been constructed and the fatigue (endurance) limit of the material is calculated The experimentally determined value of tensile strength at room temperature is 534 MPa. The calculated value of the fatigue limit, also at room temperature, using the modified staircase method and based on the mechanical fatigue tests data, is 202 MPa. With regard to creep resistance, steel 1.0122 can be considered creep-resistant only at a temperature of 400 °C and at an applied stress not exceeding 50% of the yield strength corresponding to this temperature.

scholarly journals Influence of Growth Temperature of the Nucleation Layer on the Growth of InP on Si (001)

Coatings ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 823
Author(s):  
Shizheng Yang ◽  
Hongliang Lv ◽  
Likun Ai ◽  
Fangkun Tian ◽  
Silu Yan ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Wafer Level ◽  
X Ray Diffraction ◽  
Nucleation Layer ◽  
Force Microscopy ◽  
Gas Source ◽  
Atomic Force ◽  
Growth Method ◽  
Step Growth ◽  
Microscopy Images

InP layers grown on Si (001) were achieved by the two-step growth method using gas source molecular beam epitaxy. The effects of growth temperature of nucleation layer on InP/Si epitaxial growth were investigated systematically. Cross-section morphology, surface morphology and crystal quality were characterized by scanning electron microscope images, atomic force microscopy images, high-resolution X-ray diffraction (XRD), rocking curves and reciprocal space maps. The InP/Si interface and surface became smoother and the XRD peak intensity was stronger with the nucleation layer grown at 350 °C. The Results show that the growth temperature of InP nucleation layer can significantly affect the growth process of InP film, and the optimal temperature of InP nucleation layer is required to realize a high-quality wafer-level InP layers on Si (001).

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