Growth of CoSi2/Si Multilayer Structures

1988 ◽  
Vol 116 ◽  
Author(s):  
T. L. Ljni ◽  
P. J. Grunthaner ◽  
F. D. Schowengerdt ◽  
R W. Fathauer ◽  
J. H. Mazur ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Multilayer Structures ◽  
Stoichiometric Ratio ◽  
Critical Temperatures ◽  
Amorphous Si ◽  
Minimum Yield

AbstractGrowth techniques for very thin CoSi2 and Si layers for multilayer applications have been studied. CoSi2 layers without observable pinholes are grown by atechnique utilizing the room-temperature codeposition of Co and Si in stoichiometric ratio with a Si cap, followed by annealing. The crystallinity of the resulting CoSI2 layers annealed at various temperatures was studied by in-situ Rutherford backscattering channeling spectroscopy. The channeling minimum yield decreases with increasing annealing temperature, and drops sharply at ~ 570ºC. Si overgrowth was studied on CoSi2 by a Si template technique, which utilizes the deposition of a thin amorphous Si layer followed by annealing prior to the growth of the bulk of the Si layer. The effect of Si thickness and annealing temperature on Islanding of the Si overlayer was studied by Auger electron spectroscopy. Critical temperatures for a numberof Si thicknesses were identified, above which islanding of these layers occurs.

Study of Ta as a Diffusion Barrier in Cu/SiO2 Structure

2000 ◽  
Vol 612 ◽  
Author(s):  
J. S. Pan ◽  
A. T. S. Wee ◽  
C. H. A. Huan ◽  
J. W. Chai ◽  
J. H. Zhang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Depth Profiling ◽  
Oxide Formation ◽  
X Ray ◽  
Chemical States ◽  
The Stability

AbstractTantalum (Ta) thin films of 35 nm thickness were investigated as diffusion barriers as well as adhesion-promoting layers between Cu and SiO2 using X-ray diffractometry (XRD), Scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). After annealing at 600°C for 1h in vacuum, no evidence of interdiffusion was observed. However, XPS depth profiling indicates that elemental Si appears at the Ta/SiO2 interface after annealing. In-situ XPS studies show that the Ta/SiO2 interface was stable until 500°C, but about 32% of the interfacial SiO2 was reduced to elemental Si at 600°C. Upon cooling to room temperature, some elemental Si recombined to form SiO2 again, leaving only 6.5% elemental Si. Comparative studies on the interface chemical states of Cu/SiO2 and Ta/SiO2 indicate that the stability of the Cu/Ta/SiO2/Si system may be ascribed to the strong bonding of Ta and SiO2, due to the reduction of SiO2 through Ta oxide formation.

EFFECT OF Cu DEPOSITION AND ANNEALING UPON A GaSe/Si(111) HETEROJUNCTION

1999 ◽  
Vol 06 (06) ◽  
pp. 1173-1178 ◽  
Author(s):  
B. ABIDRI ◽  
J.-P. LACHARME ◽  
M. GHAMNIA ◽  
C. A. SÉBENNE ◽  
M. EDDRIEF ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Low Energy ◽  
Layered Semiconductor ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Temperature Interaction

Single crystal substrates of GaSe, a layered semiconductor with a 2 eV band gap, were epitaxially grown by MBE onto a Si(111)(1×1)–H substrate, forming a perfectly abrupt heterojunction. Controlled amounts of Cu were sequentially deposited onto the clean passive surface of GaSe from a few tenths to several hundred monolayers (1 ML refers to the GaSe surface: 8 × 1014 at/cm 2). After given Cu depositions, the effect of UHV annealings at increasing temperatures was studied, until GaSe removal. The system was characterized as a function of either Cu deposit or annealing temperature using low energy electron diffraction, Auger electron spectroscopy and photoemission yield spectroscopy. The room temperature interaction starts as an apparent intercalation process until Cu islands begin to form, beyond about 50 ML. Upon annealings as low as 250°C, several ML of Cu disappear into the bulk of an apparently recovered GaSe, towards the GaSe/Si interface.

Amorphous Si1−xBx ALLOYS: Atomic Fine Structure and Optical Properties

1994 ◽  
Vol 336 ◽  
Author(s):  
J. R. A. Carlsson ◽  
C. Bandmann ◽  
S. Csillag ◽  
X.-H. Li ◽  
M. Johansson
Keyword(s):  
Fine Structure ◽  
Band Gap ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Annealing Temperature ◽  
Optical Band Gap ◽  
Amorphous Phases ◽  
Annealing Temperatures ◽  
Transmission Electron ◽  
Amorphous Si

ABSTRACTIn order to study the dependence of the atomic fine structure and optical band gap of the amorphous alloy on concentration and annealing temperature, thin Si1−XBX alloy films were grown and then annealed at temperatures from 400 to 1050 °C. The films were characterized by Extended Energy Loss Fine Structure spectroscopy (EXELFS), High Resolution transmission Electron Microscopy (HREM), Auger Electron Spectroscopy (AES), and light absorption spectro-photometry. It is shown that all the amorphous Si1−XBX alloys are thermally stable (e.g., >1050 °C for x=0.6) as compared to a-Si, and that the optical band gap of the alloys increases gradually with annealing temperatures up to 700 – 900 °C. When annealed at higher temperatures the band gap increased rapidly, corresponding to a phase transformation between two amorphous phases.

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