Sims Depth Profiling Studies of Sphene-Based Ceramics and Glass Ceramics Leached in Synthetic Groundwater

1981 ◽  
Vol 11 ◽  
Author(s):  
P.J. Hayward ◽  
W.H. Hocking ◽  
F.E. Doern ◽  
E.V. Cecchetto
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Glass Ceramics ◽  
High Ionic Strength ◽  
Ceramic Surface ◽  
Surface Alteration ◽  
Synthetic Groundwater ◽  
Secondary Ion ◽  
Fuel Reprocessing ◽  
Sims Depth Profiling

ABSTRACTGlass ceramics and ceramics based on the mineral sphene (CaTiSiO5) are being developed to host the wastes arising from possible future CANDU* fuel reprocessing. Results from leaching tests in deionized water and in synthetic groundwater indicate that these materials are highly durable. Secondary Ion Mass Spectrometry (SIMS) depth profiling of leached specimens suggests that leaching in the glass ceramics is predominantly confined to the glass phase. The high ionic strength and composition of the groundwater have a significant passivating effect on leaching and surface alteration phenomena, and encourage the precipitation of new phases on the ceramic surface. Leaching results, scanning electron microscope (SEM) observations and SIMS depth profile measurements are compared and discussed.

SIMS Depth Profiling Free of Martix Effects

2005 ◽  
Vol 908 ◽  
Author(s):  
Peter Huber ◽  
Helmut Karl ◽  
Bernd Stritzker
Keyword(s):  
Elemental Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Matrix Effects ◽  
Depth Profiling ◽  
High Dose ◽  
Concentration Depth Profile ◽  
The Matrix ◽  
Elemental Depth ◽  
Secondary Ion ◽  
Sims Depth Profiling

AbstractWe present a method of determining elemental depth profiles with secondary ion mass spectrometry (SIMS) corrected by all non-linearities between the SIMS countrate and the elemental concentration caused by chemical matrix effects, resulting in an absolute concentration depth profile. The key to this method is a low dose ion implantation step of corresponding reference isotopes prior to SIMS depth profiling. Spectra evaluation is performed on the basis of a selfconsistent evaluation in which the depth dependent influence of the matrix is determined. The technique is demonstrated for sequentially high dose ion implanted Cd and Se in SiO2.

Round-robin test for the measurement of layer thickness of multilayer films by secondary ion mass spectrometry depth profiling

2017 ◽  
Vol 49 (11) ◽  
pp. 1057-1063 ◽  
Author(s):  
Kyung Joong Kim ◽  
Jong Shik Jang ◽  
Joe Bennett ◽  
David Simons ◽  
Mario Barozzi ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Layer Thickness ◽  
Secondary Ion Mass Spectrometry ◽  
Depth Profiling ◽  
Multilayer Films ◽  
Round Robin ◽  
Round Robin Test ◽  
Ion Mass Spectrometry ◽  
Secondary Ion
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