The mechanism and kinetics of the oxidation of Cr(100) single‐crystal surfaces studied by reflection high‐energy electron diffraction, x‐ray emission spectroscopy, and secondary ion mass spectrometry/Auger sputter depth profiling

ABSTRACT[Ba2CuO2(CO3)]m[ACuO2]n(A=Sr) superlattices containing oxycarbonate blocks as charge reservoir have been prepared on SrTiO3 using the molecular beam epitaxy technique. First, thin films of the oxycarbonate cuprate Ba2CuO2(CO3) have been prepared on SrTiO3(001) using NO2 gas as an oxidant and CO2 gas. The films have been grown at 500°C. At higher substrate temperature or at lower CO2 pressure Ba2CuO3 was formed instead of Ba2CuO2(CO3), and the films becomes amorphous at lower temperature. X-ray diffraction and reflection high-energy electron diffraction observations indicated that (BaxSr1−x)2CuO2(CO3) grew along the [001] crystal orientation on SrTiO3(001) with the following epitaxial relationship: Ba2CuO2(CO3)[100]//SrTiO3[110] and Ba2CuO2(CO3)[110]//SrTiO3 [100]. Depth profile of secondary ion mass spectrometry signals indicated the incorporation of carbon into the films. Secondly, the oxycarbonate cuprates and infinite layers have been alternately stacked. It was confirmed that Ba2CuO2(CO3)was inserted between several unit cells of SrCuO2. Electrical measurements show the as grown films to have a semiconducting behavior.

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Surface chemical analysis. Depth profiling. Method for sputter rate determination in X-ray photoelectron spectroscopy. Auger electron spectroscopy and secondary-ion mass spectrometry sputter depth profiling using single and multi-layer thin films

10.3403/30266480u ◽

2015 ◽

Keyword(s):

Mass Spectrometry ◽

Photoelectron Spectroscopy ◽

Electron Spectroscopy ◽

Auger Electron ◽

Secondary Ion Mass Spectrometry ◽

Depth Profiling ◽

Surface Chemical ◽

X Ray ◽

Secondary Ion ◽

Surface Chemical Analysis

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Hydrothermal Growth Kinetics of BaTiO3 on TiO2 Single Crystal Surfaces

MRS Proceedings ◽

10.1557/proc-648-p6.8 ◽

2000 ◽

Vol 648 ◽

Author(s):

Víctor M. Fuenzalida ◽

Judit G. Lisoni

Keyword(s):

Single Crystal ◽

Film Growth ◽

The Other ◽

Average Height ◽

Crystal Surfaces ◽

Polishing Process ◽

Single Crystal Surfaces ◽

X Ray ◽

Backscattered Electrons ◽

Kinetics Of

AbstractTiO2 (rutile) single crystal plates with (001) and (110) orientation were immersed in an aqueous solution of Ba(OH)2 0.5 M at temperatures of 100 and 150 °C for 1 and 4 hours in order to grow BaTiO3on them. SEM micrographs of the samples fabricated on the (001) surface of rutile displayed isolated grains with an average height ranging from 200 nm at 100 °C to 700 nm at 150 °C. On the other hand, samples with the (001) orientation exhibited no growth at 100 °C and only a few grains along lines attributed to the polishing process of the substrate at 150 °C. The image of backscattered electrons indicated that barium is concentrated on the grains in all cases. Only the (001) samples exhibited reflections of cubic BaTiO3, as indicated by x-ray dif- fraction, as well as distinct Ba signals under x-ray photoelectron spectrometry. These results agree with the hypothesis of a dissolution-precipitation growth mechanism, in which dissolution is possible for the (001) face, but not for the (110) one, which is the most stable of the low-index faces of this material. Similar treatments were applied to ZrO2:Y2O3 crystals, leading to no film growth.

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Solid Phase Epitaxial Re-Growth of Amorphous Layer in Si:Si Annealed under Enhanced Hydrostatic Pressure

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.178-179.416 ◽

2011 ◽

Vol 178-179 ◽

pp. 416-420

Author(s):

Jadwiga Bak-Misiuk ◽

Andrzej Misiuk ◽

Adam Barcz ◽

Przemyslaw Romanowski

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Crystalline Silicon ◽

Solid Phase ◽

Depth Profiling ◽

Amorphous Layer ◽

Single Crystalline Silicon ◽

X Ray ◽

Ray Methods ◽

Secondary Ion

Solid phase epitaxial regrowth (SPER) of amorphized layer in Czochralski grown silicon (Cz-Si) created by self-implantation (Si+ dose 2x1016 cm-2, energy 150 keV), subsequently annealed for 5 h at up to 1400 K under Ar pressure up to 1.4 GPa, was investigated by Secondary Ion Mass Spectrometry (SIMS) and X-ray methods. Annealing of Cz-Si:Si resulted in pressure-dependent SPER with a marked carbon and oxygen gettering within regrown region. Depth profiling of carbon and oxygen contaminants provides useful information concerning SPER in implanted single crystalline silicon.

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