Mechanical Interconnects to Silicon Integrated Circuits

1987 ◽  
Vol 108 ◽  
Author(s):  
Charles A. Steidel
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Wire Bonding ◽  
Small Scale ◽  
Limiting Factor ◽  
Single Chip ◽  
Paper Briefly ◽  
Package Design ◽  
Silicon Integrated Circuits ◽  
Future Direction

ABSTRACTThere are three predominant interconnection technologies in use today for silicon integrated circuits: wire bonding; TAB (tape automated bonding); and C4 (controlled collapse chip connection). This paper briefly reviews each of these technologies for their strengths and weaknesses but focuses especially on wire bonding for single chip VLSI applications.Although wire bonding has been in widespread use ever since the invention of the small scale integrated circuit, the technique is still applicable for today's much larger and denser chips. With leadcounts up to 250 or even higher, many challenges are presented for equipment accuracy and speed and in package design, where novel techniques often are required to prevent the package from being the limiting factor in chip interconnection. These challenges are discussed in some detail.The paper concludes with a discussion of the future direction for mechanical connections as influenced by the technical and cost requirements of both the chip and the system in which it resides.

Evaluation of Epoxy Flux for Use in Hearing Aid SMD Assemblies

2013 ◽  
Vol 2013 (1) ◽  
pp. 000152-000157
Author(s):  
Susie Johansson ◽  
John Dzarnoski
Keyword(s):  
Integrated Circuits ◽  
Hearing Aids ◽  
Integrated Circuit ◽  
Hearing Aid ◽  
Single Step ◽  
Size Reduction ◽  
Circuit Board ◽  
Limiting Factor ◽  
Surface Mount ◽  
Die Attach

Miniaturization of everyday products has been driving sales for some time and continues to fuel the consumer market. Everyone expects size reduction with each new product generation [1], [2]. Almost everything has electronics inside that must get smaller. There is no market demanding smaller devices that are faster, more capable, more feature-rich than that of the hearing aid industry. While radios, Bluetooth wireless systems and other accessories are added to hearing instruments feature lists, the consumer nonetheless continues to wish for them to be even smaller. Advancements in circuit fabrication, component shrinkage and die consolidation have aided the industry in satisfying this need. However, as this demand continues and even intensifies, current surface mount device assembly materials are becoming inadequate and the limiting factor for overall circuit size reduction; specifically, the die attachment, protection and reinforcement process is limiting how small hearing aid circuits can be. For hearing aids, the addition of more features and connection to more accessories each require a number of integrated circuits and associated passives attached to a flexible circuit. These circuits are invariably bent and twisted during assembly, up to 180°, requiring the integrated circuit solder joints to be reinforced by underfilling to prevent detachment. Unfortunately, the underfilling process is time-consuming and the capillary action necessary for its success is finicky. Even more unfavorably, a designated “keep out” area for other components must surround the die to be underfilled to allow for the dispensing equipment to access the die, reducing the useable board space and limiting the overall possibility of circuit size reduction. Additionally, the underfill material must stay away from circuit board edges and areas to be bent during final assembly. In an attempt to increase useable circuit board space, decrease overall circuit board size, and reduce assembly steps, the application of two epoxy flux materials for die attach fluxing and underfilling of hearing aids was evaluated. Epoxy flux is a relatively new material, which combines the functionality of flux and underfill into a single step. Epoxy flux's application, while eliminating steps, would more significantly eliminate the necessary “keep out” areas around die and allow for more densely placed surface mount components. The epoxy flux materials were applied by both printing and dipping, and then evaluated using x-ray imaging, scanning acoustic microscope imaging, die peel testing, multiple reflow integrity testing and die shear testing.

scholarly journals High Temperature Silicon Integrated Circuits and Passive Components for Commercial and Military Applications

1998 ◽  
Author(s):  
Richard R. Grzybowski ◽  
Ben Gingrich
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Elevated Temperatures ◽  
Silicon On Insulator ◽  
Passive Component ◽  
Oil Well ◽  
Automotive Electronics ◽  
Passive Components ◽  
Silicon Integrated Circuits

Advances in silicon-on-insulator (SOI) integrated circuit technology and the steady development of wider band gap semiconductors like silicon carbide are enabling the practical deployment of high temperature electronics. High temperature civilian and military electronics applications include distributed controls for aircraft, automotive electronics, electric vehicles and instrumentation for geothermal wells, oil well logging and nuclear reactors. While integrated circuits are key to the realization of complete high temperature electronic systems, passive components including resistors, capacitors, magnetics and crystals are also required. This paper will present characterization data obtained from a number of silicon high temperature integrated evaluated over a range of elevated temperatures and aged at a selected high temperature. This paper will also present a representative cross section of high temperature passive component characterization data for device types needed by many applications. Device types represented will include both small signal and power resistors and capacitors. Specific problems encountered with the employment of these devices in harsh environments will be discussed for each family of components. The goal in presenting this information is to demonstrate the viability of a significant number of commercially available silicon integrated circuits and passive components that operate at elevated temperatures as well as to encourage component suppliers to continue to optimize a selection of their product offerings for operation at higher temperatures. In addition, systems designers will be encouraged to view this information with an eye toward the conception and implementation of reliable and affordable high temperature systems.

Process Integration issues for Interlevel Dielectric Materials for Sub-quarter Micron Silicon Integrated Circuits

1998 ◽  
Vol 511 ◽  
Author(s):  
Vijay Parihar ◽  
R. Singh
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Process Integration ◽  
Dielectric Materials ◽  
New Approach ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Silicon Integrated Circuits ◽  
Processing Techniques ◽  
Low K

ABSTRACTThe continued miniaturization towards sub-quarter micron feature size mandates the search for low dielectric constant interlayer dielectric materials. A large number of materials and processing techniques has been suggested, but so far none of the proposed dielectric materials as well as processing techniques have been integrated into standard integrated circuit processing. In this paper, a new approach has been formulated for integration of low-k dielectric materials for future integrated circuits.

scholarly journals Localized Bioimpedance Measurements with the MAX3000x Integrated Circuit: Characterization and Demonstration

Sensors ◽  
2021 ◽  
Vol 21 (9) ◽  
pp. 3013
Author(s):  
Shelby Critcher ◽  
Todd J. Freeborn
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Electrical Impedance ◽  
Complex Impedance ◽  
Technical Note ◽  
Single Chip ◽  
Impedance Measurements ◽  
Wearable Systems ◽  
Small Form Factor ◽  
Resistance Component

The commercial availability of integrated circuits with bioimpedance sensing functionality is advancing the opportunity for practical wearable systems that monitor the electrical impedance properties of tissues to identify physiological features in support of health-focused applications. This technical note characterizes the performance of the MAX3000x (resistance/reactance accuracy, power modes, filtering, gains) and is available for on-board processing (electrode detection) for localized bioimpedance measurements. Measurements of discrete impedances that are representative of localized tissue bioimpedance support that this IC has a relative error of <10% for the resistance component of complex impedance measurements, but can also measure relative alterations in the 250 mΩ range. The application of the MAX3000x for monitoring localized bicep tissues during activity is presented to highlight its functionality, as well as its limitations, for multi-frequency measurements. This device is a very-small-form-factor single-chip solution for measuring multi-frequency bioimpedance with significant on-board processing with potential for wearable applications.

Preparation of Transmission Electron Microscopy Samples from Silicon Integrated Circuits

1971 ◽  
Vol 29 ◽  
pp. 148-149
Author(s):  
P. J. Smith ◽  
M. V. Kulkarni ◽  
H. A. Troutman
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Integrated Circuits ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Preparation Technique ◽  
Area Of Interest ◽  
Transmission Electron ◽  
Silicon Integrated Circuits ◽  
Bottom Side

A new preparation technique for transmission electron microscopy samples has been developed which allows an individual device within a silicon integrated circuit to be thinned.Typical devices within present silicon integrated circuits are located in the top few microns of a silicon chip, Fig. 1, and have lateral dimensions on the order of a fraction of a millimeter. Sample preparation for electron microscopy is usually accomplished by jet-etching the bottom side of the wafer, directly under the device of interest; thickness is estimated by the color of transmitted light. It is extremely difficult to ensure that the sample will be thinned in exactly the area of interest since the jet is incident on the bottom side of the sample while the device is on the top side, making exact alignment difficult; the jet is large compared to transistor dimensions; the presence of differently doped regions leads to non-uniform thinning.

Adaptive Optics Compensation of Aberrations Introduced by Sample Thickness Error in aSIL Confocal Scanning Microscopy

2013 ◽  
Author(s):  
Y. Lu ◽  
T.G. Bifano ◽  
M.S. Ünlü ◽  
B.B. Goldberg
Keyword(s):  
Integrated Circuits ◽  
Adaptive Optics ◽  
Integrated Circuit ◽  
Spherical Aberration ◽  
Sample Thickness ◽  
Imaging Quality ◽  
Silicon Integrated Circuits ◽  
Confocal Scanning ◽  
Confocal Scanning Microscopy

Abstract We report on aberration compensation in an aplanatic solid immersion lens microscope used for high-resolution backside inspection of silicon integrated circuits. The imaging quality of aplanatic SIL microscope is shown to be significantly degraded by aberrations, especially when the silicon integrated circuit samples have thicknesses that are more than a few micrometers thicker or thinner than ideal. We describe and demonstrate a technique to recover near-ideal imaging quality by compensating those aberrations using a MEMS deformable mirror. The mirror, located in an optical plane conjugate to the microscope objective, is shaped in a way that counteracts spherical aberration errors associated with non-ideal sample thickness.

High Temperature Silicon Integrated Circuits and Passive Components for Commercial and Military Applications

1999 ◽  
Vol 121 (4) ◽  
pp. 622-628 ◽  
Author(s):  
R. R. Grzybowski ◽  
B. Gingrich
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Elevated Temperatures ◽  
Silicon On Insulator ◽  
Passive Component ◽  
Oil Well ◽  
Automotive Electronics ◽  
Passive Components ◽  
Silicon Integrated Circuits

Advances in silicon-on-insulator (SOI) integrated circuit technology and the steady development of wider band gap semiconductors like silicon carbide are enabling the practical deployment of high temperature electronics. High temperature civilian and military electronics applications include distributed controls for aircraft, automotive electronics, electric vehicles and instrumentation for geothermal wells, oil well logging, and nuclear reactors. While integrated circuits are key to the realization of complete high temperature electronic systems, passive components including resistors, capacitors, magnetics, and crystals are also required. This paper will present characterization data obtained from a number of silicon high temperature integrated evaluated over a range of elevated temperatures and aged at a selected high temperature. This paper will also present a representative cross section of high temperature passive component characterization data for device types needed by many applications. Device types represented will include both small signal and power resistors and capacitors. Specific problems encountered with the employment of these devices in harsh environments will be discussed for each family of components. The goal in presenting this information is to demonstrate the viability of a significant number of commercially available silicon integrated circuits and passive components that operate at elevated temperatures as well as to encourage component suppliers to continue to optimize a selection of their product offerings for operation at higher temperatures. In addition, systems designers will be encouraged to view this information with an eye towards the conception and implementation of reliable and affordable high temperature systems.

Scanning Electron Microscopy in Hybrid Microelectronics

1976 ◽  
Vol 34 ◽  
pp. 456-457
Author(s):  
S. Khadpe ◽  
R. Faryniak
Keyword(s):  
Integrated Circuits ◽  
Thick Film ◽  
Integrated Circuit ◽  
Failure Modes ◽  
Three Dimensional ◽  
Circuit Components ◽  
Hybrid Microcircuit ◽  
Electrical Connections ◽  
Scanning Electron

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.

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