Cu wire bonding for fine pitch 65nm silicon integrated circuits

2010 ◽  
Author(s):  
Qwai Low ◽  
John Osenbach ◽  
YongSeok Yang ◽  
KyeongSool Seong ◽  
SeokHo Na
Keyword(s):  
Integrated Circuits ◽  
Wire Bonding ◽  
Fine Pitch ◽  
Silicon Integrated Circuits

Mechanical Interconnects to Silicon Integrated Circuits

1987 ◽  
Vol 108 ◽  
Author(s):  
Charles A. Steidel
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Wire Bonding ◽  
Small Scale ◽  
Limiting Factor ◽  
Single Chip ◽  
Paper Briefly ◽  
Package Design ◽  
Silicon Integrated Circuits ◽  
Future Direction

ABSTRACTThere are three predominant interconnection technologies in use today for silicon integrated circuits: wire bonding; TAB (tape automated bonding); and C4 (controlled collapse chip connection). This paper briefly reviews each of these technologies for their strengths and weaknesses but focuses especially on wire bonding for single chip VLSI applications.Although wire bonding has been in widespread use ever since the invention of the small scale integrated circuit, the technique is still applicable for today's much larger and denser chips. With leadcounts up to 250 or even higher, many challenges are presented for equipment accuracy and speed and in package design, where novel techniques often are required to prevent the package from being the limiting factor in chip interconnection. These challenges are discussed in some detail.The paper concludes with a discussion of the future direction for mechanical connections as influenced by the technical and cost requirements of both the chip and the system in which it resides.

Electrical Invasiveness of Grinding and Polishing Silicon Integrated Circuits Down to 1 μm Remaining Silicon Thickness

2016 ◽  
Author(s):  
Robert Chivas ◽  
Scott Silverman ◽  
Michael DiBattista ◽  
Ulrike Kindereit
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Electron Hole ◽  
Analysis Techniques ◽  
Silicon Integrated Circuits ◽  
Electron Hole Pair ◽  
Pair Generation ◽  
Silicon Thickness ◽  
Performance Timing ◽  
Grinding And Polishing

Abstract Anticipating the end of life for IR-based failure analysis techniques, a method of global backside preparation to ultra-thin remaining silicon thickness (RST) has been developed. When the remaining silicon is reduced, some redistribution of stress is expected, possibly altering the performance (timing) of integrated circuits in addition to electron-hole pair generation. In this work, a study of the electrical invasiveness due to grinding and polishing silicon integrated circuits to ultra-thin (< 5 um global, ~ 1 um local) remaining thickness is presented.

2N Wire for Ultra Fine Pitch Wire Bonding: Challenges & Solutions

2008 ◽  
Author(s):  
June Sub Hwang ◽  
Balasubramanian Senthil Kumar ◽  
Jeong Tak Moon ◽  
Chul Uhm ◽  
Yu Na Kim ◽  
...  
Keyword(s):  
Wire Bonding ◽  
Fine Pitch

Electro‐optic sampling of high‐speed silicon integrated circuits using a GaAs probe tip

1991 ◽  
Vol 59 (2) ◽  
pp. 146-148 ◽  
Author(s):  
Michael S. Heutmaker ◽  
George T. Harvey ◽  
Philip F. Bechtold
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Electro Optic ◽  
Silicon Integrated Circuits
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