Investigation of Platinum Silicide Schottky Barrier Height Modulation using a Dopant Segregation Approach

2008 ◽  
Vol 1070 ◽  
Author(s):  
Nicolas Breil ◽  
Aomar Halimaoui ◽  
Emmanuel Dubois ◽  
Evelyne Lampin ◽  
Guilhem Larrieu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Depth Profiling ◽  
Dopant Activation ◽  
Dopant Segregation ◽  
Platinum Silicide ◽  
Plasma Doping ◽  
Sims Depth Profiling

ABSTRACTThe role of the dopant activation on the segregation efficiency during the formation of platinum silicide (PtSi) is investigated in this paper. Using an implant before silicidation technique, we first demonstrate an important Schottky Barrier Height (SBH) modulation for As and B segregation. In the case of As, we highlight that an activation of the dopants before the silcidation does not impact the SBH modulation. On the contrary, an important impact of the dopant crystalline position is evidenced for Boron. Also, a comparison of conventional implant versus a PLAsma Doping (PLAD) highlights the suitability of the latter implantation tool for the SBH modulation. Those results are interpreted on the basis of SIMS depth profiling.

Schottky Barrier Height Engineering in NiGe/n-Ge(001) Contacts by Germanidation Induced Dopant Segregation

2007 ◽  
Vol 994 ◽  
Author(s):  
S. L. Liew ◽  
C. T. Chua ◽  
D. H. L Seng ◽  
D. Z. Chi
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Dopant Segregation

AbstractSchottky barrier height (ÖB) engineering of NiGe/n-Ge(001) diodes was achieved through germanidation induced dopant segregation on As implanted-Ge substrates. was reduced from 0.55 eV to 0.16 eV with increasing As dose on n-Ge(001) while on p-Ge(001), the diodes exhibited increasing ÖB.

TEM studies of PtSi low Schottky-barrier contacts for source/drain in MOS transistors

Open Physics ◽  
2011 ◽  
Vol 9 (2) ◽  
Author(s):  
Adam Łaszcz ◽  
Jacek Ratajczak ◽  
Andrzej Czerwinski ◽  
Jerzy Kątcki ◽  
Nicolas Breil ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Height ◽  
Mos Transistors ◽  
Dopant Segregation ◽  
Platinum Silicide ◽  
Annealing Temperatures ◽  
Silicide Layer ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
The Impact

AbstractTransmission electron microscopy methods were used to determine the impact of two different implantation processes on the morphology of platinum silicide layers constituting low Schottky barrier contacts intended as the source/drain in MOS transistors. These processes are very promising candidates for the reduction of the Schottky barrier height (SBH) of contacts and are realized by (i) implantation-through-metal (ITM) followed by dopant-segregation induced by silicidation annealing and (ii) implantation-through-silicide (ITS) followed by dopant-segregation due to the post-silicidation annealing. The studies showed that depending on the type and conditions of the process (ITM or ITS with various post-silicidation annealing temperatures) different morphologies of PtSi layers and PtSi/Si interfaces roughnesses are observed. Better quality silicide layers and silicide/silicon interfaces were found for samples after the ITS process with post-silicidation annealing at 500°C than for samples after the ITM process or the ITS process with post-silicidation annealing at temperatures not exceeding 400°C.The observed microstructure of grains and interfaces in these samples, along with the impact of the dopant-segregation, may significantly influence the SBH value. The diffraction patterns and EDXS measurements revealed that regardless of the process type, the formed silicide layer is always PtSi.

scholarly journals Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing

Materials ◽  
2016 ◽  
Vol 9 (5) ◽  
pp. 315 ◽  
Author(s):  
Chaochao Fu ◽  
Xiangbiao Zhou ◽  
Yan Wang ◽  
Peng Xu ◽  
Ming Xu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Dopant Segregation ◽  
Microwave Annealing
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