Role of hybridization on the Schottky barrier height of carbon nanotube field effect transistors

2009 ◽  
Vol 79 (12) ◽  
Author(s):  
D. Casterman ◽  
M. M. De Souza ◽  
A. Tahraoui ◽  
C. Durkan ◽  
W. I. Milne
Keyword(s):  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Field Effect ◽  
Schottky Barrier Height ◽  
Field Effect Transistors

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS2 Field-Effect Transistors

2018 ◽  
Vol 31 (2) ◽  
pp. 1804422 ◽  
Author(s):  
Sang-Soo Chee ◽  
Dongpyo Seo ◽  
Hanggyu Kim ◽  
Hanbyeol Jang ◽  
Seungmin Lee ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Field Effect ◽  
Schottky Barrier Height ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Ag Electrodes

High mobility ReSe2 field effect transistors: Schottky-barrier-height-dependent photoresponsivity and broadband light detection with Co decoration

2D Materials ◽  
2019 ◽  
Vol 7 (1) ◽  
pp. 015010 ◽  
Author(s):  
Muhammad Farooq Khan ◽  
Shania Rehman ◽  
Imtisal Akhtar ◽  
Sikandar Aftab ◽  
Hafiz Muhammad Salman Ajmal ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Field Effect ◽  
Schottky Barrier Height ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Light Detection

scholarly journals Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2346
Author(s):  
Yonatan Vaknin ◽  
Ronen Dagan ◽  
Yossi Rosenwaks
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Field Effect ◽  
Schottky Barrier Height ◽  
Field Effect Transistors ◽  
Single Layer ◽  
Image Force ◽  
Transition Metal Dichalcogenide ◽  
Metal Interface ◽  
Effect Transistor

Understanding the nature of the barrier height in a two-dimensional semiconductor/metal interface is an important step for embedding layered materials in future electronic devices. We present direct measurement of the Schottky barrier height and its lowering in the transition metal dichalcogenide (TMD)/metal interface of a field effect transistor. It is found that the barrier height at the gold/ single-layer molybdenum disulfide (MoS2) interfaces decreases with increasing drain voltage, and this lowering reaches 0.5–1 V We also show that increase of the gate voltage induces additional barrier lowering.

Investigation of Parameters for Schottky Barrier (SB) Height for Schottky Barrier Based Carbon Nanotube Field Effect Transistor Device

2020 ◽  
Vol 15 (7) ◽  
pp. 783-791
Author(s):  
Anil Kumar Bhardwaj ◽  
Sumeet Gupta ◽  
Balwinder Raj
Keyword(s):  
Dielectric Constant ◽  
Carbon Nanotube ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Schottky Barrier Height ◽  
Oxide Thickness ◽  
Proper Choice ◽  
Effect Transistor

The design and development of Schottky Barrier Carbon Nanotube Field Effect Transistor (SB CNTFET) is still in the primitive research phase for its utilization in digital design. There is an immediate requirement for the analysis of parametric relations with structural factors to benefit the researchers working in this field. This work helps in the improvement of SB based CNTFET devices to be used in the development of various circuit applications. In this work, investigation of Schottky Barrier height on the performance of SB CNTFET for various geometrical and physical design parameters at the device level has been reported. The analysis of various device parameters of carbon nanotube, i. e., chirality, diameter, band gap, oxide thickness and dielectric constant has been carried out viz. subthreshold conduction, and ION/IOFF ratio. The paper also reports the effect of high dielectric constant material in SB CNTFET with oxide thickness along with Schottky Barrier Height Variation. The performance of SB CNTFET with variation in Schottky Barrier height and temperature variation is also reported. The results obtained indicate that performance of SB based CNTFET can be modified by the proper choice of chirality, dielectrics, oxide thickness and operating temperature. The SB parameter can be optimized by proper choice of metal contact in case of CNTFET.

Insertion of an ultrathin Al2O3 interfacial layer for Schottky barrier height reduction in WS2 field-effect transistors

Nanoscale ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 4811-4821 ◽  
Author(s):  
Shan Zheng ◽  
Haichang Lu ◽  
Huan Liu ◽  
Dameng Liu ◽  
John Robertson
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Interfacial Layer ◽  
Field Effect ◽  
Schottky Barrier Height ◽  
Field Effect Transistors ◽  
Height Reduction

We report an effective approach for reducing the Schottky barrier height (SBH) in the source and drain (S/D) contacts of WS2 field-effect transistors (FETs) using an ultrathin Al2O3 interfacial layer between the metal and WS2.

Influence of Chemical Dopant Technique to Reduce Schottky Barriers of Pd-Contacted CNTFETs

2006 ◽  
Vol 963 ◽  
Author(s):  
Damien Casterman ◽  
Merlyne Maria De Souza
Keyword(s):  
Carbon Nanotube ◽  
Ab Initio ◽  
Schottky Barrier ◽  
Chlorine Atom ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Schottky Barriers ◽  
And Shifts ◽  
P Type

ABSTRACTThe role of the p-type chemical dopant, SbCl6, on Palladium (Pd)-contacted carbon nanotube field effect transistors (CNTFETs) is investigated using ab initio calculations. The interaction of SbCl6 with Pd leads to the chemisorption of one chlorine atom (Cl) which separates off from the rest of the molecule leaving behind a rehybridized SbCl5 molecule. This interaction increases the local workfunction by 0.08 eV. The interaction of the molecule with the carbon nanotube (CNT) itself results in the physisorption of SbCl6 onto CNT. The SbCl6 is found to degenerately dope CNT p-type and shifts the local potential by 0.29 eV. These barriers are useful for modelling of transport of Schottky barrier CNTFETs.

Sign in / Sign up

Export Citation Format

Share Document