Radiation-Induced Oxide Charge Distributions in Simox Buried Oxides

MRS Proceedings ◽

10.1557/proc-107-323 ◽

1987 ◽

Vol 107 ◽

Cited By ~ 3

Author(s):

J. M. Hwang ◽

J. Bartko ◽

P. Rai-Choudhury ◽

W. E. Bailey

Keyword(s):

Optical Properties ◽

Ionizing Radiation ◽

Charge Density ◽

Leakage Current ◽

Annealing Temperature ◽

Electronic Circuits ◽

Density Region ◽

Oxide Charge ◽

Thermal Oxide ◽

Radiation Induced

AbstractIn ionizing-radiation environments, oxide charge buildup in the buried oxide of SIMOX SOI material causes an increase in the back-channel leakage current, resulting in an instability in electronic circuits formed on SIMOX wafers. We report the measured distributions of radiation-induced oxide charge density in buried oxides formed by oxygen implantation. These are obtained by etch-back experiments including C-V measurements using a mercury probe and ellipsometer measurements. The results show a region of higher charge density about 1500A from the top interface with a lower density region within a few hundred angstroms of the top interface. The results also show that the oxide charge density decreases with annealing temperature. Some unusual optical properties of SIMOX oxide observed in ellipsometer measurements are discussed comparatively with thermal oxide.

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Enhancement of the Electrical Properties of BaTiO3 Films on GaAs Using Double Layer Structures

MRS Proceedings ◽

10.1557/proc-361-489 ◽

1994 ◽

Vol 361 ◽

Author(s):

L.H. Chang ◽

W.A. Anderson

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Electrical Properties ◽

Charge Density ◽

Leakage Current ◽

Leakage Current Density ◽

Double Layer ◽

Current Density ◽

Dielectric Constants ◽

Oxide Charge

ABSTRACTFerroelectric BaTiO3 thin films have been directly deposited on n-GaAs with carrier concentration of 5.3–8.2×1017/cm2. The BaTiO3 thin films with a thickness in the range of 80–120 nm were prepared by RF magnetron sputtering with a substrate temperature of 300°C. The as-deposited BaTiO3 films appeared to be amorphous with relative dielectric constants of around 15 and gave flat capacitance-voltage (C-V) curves, indicating poor interface properties and very high oxide charge density. After rapid thermal annealing (RTA) at 800°C for 60 sec, the relative dielectric constant of the BaTiO3 film increased to 82 and a sharp C-V curve was observed with oxide charge density of about 7×1012/cm2. However, the leakage current density increased from 4×10'11 A/cm2 for as-deposited BaTiO3 to 2×105 A/cm2 for RTA(800°C)-BaTiO3 at a field of 4×105 V/cm. By taking advantage of the best properties from both as-deposited amorphous BaTiO3 films (low leakage current density) and RTA(800°C)-BaTiO3 (high dielectric constant) the double layer structure was designed to enhance the electrical properties of the BaTiO3 films on GaAs. The most promising results in regards to the dielectric property and leakage current density are 76.5 and 9.7×109 A/cm2, respectively, for the double layer RTA(500°C)-BaTiO3 on RTA(800°C)-BaTiO3 structures.

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Ionizing radiation induced leakage current in the PD-SOI devices with different layout structures

2013 IEEE International Conference of Electron Devices and Solid-state Circuits ◽

10.1109/edssc.2013.6628221 ◽

2013 ◽

Author(s):

Liu Yuan ◽

He Yu-Juan ◽

En Yun-Fei ◽

Shi Qian

Keyword(s):

Ionizing Radiation ◽

Leakage Current ◽

Radiation Induced ◽

Soi Devices

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Ionizing radiation induced leakage current on ultra-thin gate oxides

IEEE Transactions on Nuclear Science ◽

10.1109/23.658948 ◽

1997 ◽

Vol 44 (6) ◽

pp. 1818-1825 ◽

Cited By ~ 126

Author(s):

A. Scarpa ◽

A. Paccagnella ◽

F. Montera ◽

G. Ghibaudo ◽

G. Pananakakis ◽

...

Keyword(s):

Ionizing Radiation ◽

Leakage Current ◽

Gate Oxides ◽

Radiation Induced

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Radiation-induced surface decomposition

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100075592 ◽

1983 ◽

Vol 41 ◽

pp. 368-369

Author(s):

M. L. Knotek

Keyword(s):

Ionizing Radiation ◽

Atomic Structure ◽

Chemical Bonding ◽

Neutral Species ◽

Radiation Induced ◽

Physical And Chemical ◽

Surface Decomposition ◽

The Relationship ◽

Electron And Photon ◽

Surface Bond

Modern surface analysis is based largely upon the use of ionizing radiation to probe the electronic and atomic structure of the surfaces physical and chemical makeup. In many of these studies the ionizing radiation used as the primary probe is found to induce changes in the structure and makeup of the surface, especially when electrons are employed. A number of techniques employ the phenomenon of radiation induced desorption as a means of probing the nature of the surface bond. These include Electron- and Photon-Stimulated Desorption (ESD and PSD) which measure desorbed ionic and neutral species as they leave the surface after the surface has been excited by some incident ionizing particle. There has recently been a great deal of activity in determining the relationship between the nature of chemical bonding and its susceptibility to radiation damage.

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Electrical and Optical Properties Dependence on Annealing Temperature for CdS Thin Films

Indian Journal Of Applied Research ◽

10.15373/2249555x/may2013/176 ◽

2011 ◽

Vol 3 (5) ◽

pp. 544-548 ◽

Cited By ~ 2

Author(s):

F. Y. Al-Shaikley F. Y. Al-Shaikley ◽

Keyword(s):

Thin Films ◽

Optical Properties ◽

Annealing Temperature ◽

Electrical And Optical Properties ◽

Cds Thin Films

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Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress

MRS Proceedings ◽

10.1557/proc-716-b2.9 ◽

2002 ◽

Vol 716 ◽

Cited By ~ 1

Author(s):

Yi-Mu Lee ◽

Yider Wu ◽

Joon Goo Hong ◽

Gerald Lucovsky

Keyword(s):

Leakage Current ◽

Electrical Performance ◽

Constant Current ◽

Continuous Increase ◽

Current Stress ◽

Thermal Oxide ◽

Stress Induced Leakage Current ◽

Boron Penetration ◽

Soft Breakdown ◽

Induced Defects

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2 interface, and reduced gate-to-drain overlap region.

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