Cold Cathode Electron Beam Recrystallization of Soi Films

1987 ◽  
Vol 107 ◽  
Author(s):  
L. R. Thompson ◽  
J. A. Knapp ◽  
C. A. Moore ◽  
G. J. Collins
Keyword(s):  
Electron Beam ◽  
Line Intensity ◽  
Line Source ◽  
Power Level ◽  
Control Procedure ◽  
Cold Cathode ◽  
Direct Control ◽  
Beam System ◽  
Computer Based ◽  
Zone Melt

AbstractA cold cathode line source electron beam system for forming SOI films by zone melt recrystallization is described. Possible advantages gained from using a cold cathode electron beam include the controllability of the beam profile and power level, as well as straight-forward scaling to recrystallization of 6 or 8 inch wafers. A computer-based melt width control procedure incorporating feedback to the line intensity from optical observation of the molten zone is also described. This technique allows direct control and adjustment of the melt zone over widths typically from 1 to 3 mm.

Rapid E-Beam Heating for Measuring Thermodynamics of Metastable Materials

1988 ◽  
Vol 100 ◽  
Author(s):  
J. A. Knapp ◽  
D. M. Follstaedt
Keyword(s):  
Electron Beam ◽  
Solid State ◽  
Line Source ◽  
Metastable Phases ◽  
Slow Heating ◽  
Surface Layers ◽  
New Approach ◽  
Beam System ◽  
Beam Heating ◽  
Melting Transitions

ABSTRACTA line-source electron-beam system has been used to heat thin surface layers of metastable phases at a rate which precludes solid-state transformations to stable phases, thus permitting the observation of melting transitions normally missed with slow heating. A detailed example of a new approach to this method is shown for metastable icosahedral Al-Re and. crystalline Al6Re.

Line-Shaped Electron Beam System and Soi Films Prepared by The System

1985 ◽  
Vol 45 ◽  
Author(s):  
Y. Hayafuji ◽  
A. Shibata ◽  
T. Yanada ◽  
A. Sawada ◽  
S. Usui ◽  
...  
Keyword(s):  
Electron Beam ◽  
Crystalline Silicon ◽  
Semiconductor Industry ◽  
High Energy ◽  
Silicon Films ◽  
High Energy Density ◽  
Present System ◽  
Single Crystalline ◽  
Beam System ◽  
Scanning Area

ABSTRACTThe line-shaped electron beam annealing system which generates an electron beam of a length of 4 cm and a width af less than 100 um with a high energy density exceeding well over 100 kW/cm2 was developed for the first time with a purpose of SOI processing as its primary application. An pccelaration voltage of up to 20 kV can be used in this system. Seeded single crystalline islands with areas several mm long and 30 to 100 um in width were obtained by a single scan of the electron beam. The electron beam is generated in a pulsed way in the system due to the power restriction of the power supplies. An area of 4×5 cm2 was processed by a single scan of an electron beam at a sample speed of 530 cm/sec and a beam duration of 9.5 msec. The scanning area for one scan is determined by the beam length and the duration of the beam and sample speed.The present system could give single crystalline silicon films without any grain boundaries. The electron mobility of the electron beam recrystallized films, obtained from FETs made as a vehicle to test the electrical properties of the films, was comparable to that of the bulk silicon. A very rapid migration of silicon atoms in solid polycrystalline silicon films, which is controllable by process parameters, was also found with a migration speed of the order of 1 m/sec in a capped structure. The present electron beam system is useful in studying basic mechanisms of crystal growth in thin films. The system can have a very high throughput, a desirable feature in semiconductor industry. The present system can also be used to study the rapid thermal treatment of materials other than semiconductors including rapidly solidified materials.

scholarly journals SPECIFIC OF INTERACTION OF THE MACROPARTICLES WITH THE PLASMA-BEAM SYSTEMS

2021 ◽  
pp. 69-73
Author(s):  
A.A. Bizyukov ◽  
A.D. Chibisov ◽  
E.V. Romashchenko ◽  
V.V. Masich
Keyword(s):  
Electron Beam ◽  
Detailed Analysis ◽  
Plasma Beam ◽  
Beam System ◽  
Rate Of Heating

The presented paper summarizes the results of the last works of the authors on modeling the processes of heating and evaporation of macroparticles in a plasma-beam system. The emphasis are made on the influence of the parameters of the plasma as well as the electron beam introduced into the plasma on these processes. A detailed analysis of the effects that accelerate or slow down the rate of heating and evaporation of macroparticles has been performed.

scholarly journals Expansion of technological capabilities of the electron beam welding installation

2021 ◽  
Vol 2077 (1) ◽  
pp. 012021
Author(s):  
I N Starkov ◽  
K A Rozhkov ◽  
T V Olshanskaya ◽  
D N Trushnikov ◽  
I A Zubko
Keyword(s):  
Electron Beam ◽  
Electron Beam Welding ◽  
Additive Technologies ◽  
Technological Capabilities ◽  
Beam Hardening ◽  
Expensive Equipment ◽  
New Methods ◽  
Beam System ◽  
Methods And Techniques ◽  
The Moment

Abstract The direction of electron beam technologies is promising and is rapidly developing. Quite recently, the electron beam was a tool for welding, and nowadays, electron-beam additive technologies and beam hardening technologies have become widespread. At the moment, there is no electron beam system that unites all these technologies. Expensive equipment has been developed to implement each technology. The article deals with expanding the technological capabilities of the 15E1000 electron-beam welding installation in order to implement new methods and techniques for processing metals with an electron beam.

Cold-cathode electron-beam-sustained CO2and CO lasers

1973 ◽  
Vol 9 (6) ◽  
pp. 680-681 ◽  
Author(s):  
R. Hunter ◽  
G. Sullivan ◽  
W. Beggs ◽  
J. Benze ◽  
G. Canavan
Keyword(s):  
Electron Beam ◽  
Cold Cathode
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