Deep-Level Defects in Nitrogen-Doped 6H-SiC Grown by PVT Method

2008 ◽  
Vol 1069 ◽  
Author(s):  
Pawel Kaminski ◽  
Michal Kozubal ◽  
Krzysztof Grasza ◽  
Emil Tymicki
Keyword(s):  
Single Crystals ◽  
Defect Structure ◽  
Deep Level ◽  
Nitrogen Concentration ◽  
Activation Energies ◽  
Electron Traps ◽  
Nitrogen Doped ◽  
Significant Change

ABSTRACTAn effect of the nitrogen concentration on the concentrations of deep-level defects in bulk 6H-SiC single crystals is investigated. Six electron traps labeled as T1A, T1B, T2, T3, T4 and T5 with activation energies of 0.34, 0.40, 0.64, 0.67, 0.69, and 1.53 eV, respectively, were revealed. The traps T1A (0.34 eV) and T1B (0.40 eV), observed in the samples with the nitrogen concentration ranging from ∼2×1017 to 5×1017 cm−3, are attributed to complexes formed by carbon vacancies located at various lattice sites and carbon antisites. The concentrations of traps T2 (0.64 eV) and T3 (0.67 eV) have been found to rise from ∼5×1015 to ∼1×1017 cm−3 with increasing the nitrogen concentration from ∼2×1017 to ∼2.0×1018 cm−3. These traps are assigned to complexes involving silicon vacancies occupying hexagonal and quasi-cubic sites, respectively, and nitrogen atoms. The trap T4 (0.69 eV) concentration also substantially rises with increasing the nitrogen concentration and it is likely to be related to complexes formed by carbon antisites and nitrogen atoms. The midgap trap T5 (1.53 eV) is presumably associated with vanadium contamination. The presented results show that doping with nitrogen involves a significant change in the defect structure of 6H-SiC single crystals.

Investigation of the Homogeneity and Defect Structure in Semi-Insulating Lec GaAs Single Crystals by Synchrotron Radiation Double Crystal X-Ray Topography.

1984 ◽  
Vol 41 ◽  
Author(s):  
S J Barnett ◽  
B K Tanner ◽  
G. T. Brown
Keyword(s):  
Synchrotron Radiation ◽  
Single Crystals ◽  
Defect Structure ◽  
Deep Level ◽  
Lattice Parameter ◽  
Double Crystal ◽  
X Ray ◽  
Lec Gaas ◽  
Order Of Magnitude ◽  
Small Lattice

AbstractThe high intensity and large beam size of a synchrotron radiation source have been exploited in order to obtain double crystal X-ray topographs of whole 2in. and 3in. slices of semi-insulating LEC GaAs single crystals. Exposure times, typically 30 minutes for high resolution topographs, are at least one order of magnitude down on those required when using a conventional source. Variations in relative lattice parameter and lattice tilt have been measured as a function of position on the slice. The defect structure has been imaged and dislocations are seen in cellular configurations, slip bands and linear arrays (lineage), the latter of which are shown to be associated with small lattice tilts, typically 30”. The defect structure revealed on the topographs has been correlated with 1μm infrared absorption micrographs which are believed to represent the concentration of the dominant deep level EL2.

Deep level transient spectroscopy of electron traps and sensitizing centers in undoped CdS single crystals

1981 ◽  
Vol 52 (1) ◽  
pp. 261-268 ◽  
Author(s):  
M. Hussein ◽  
G. Lleti ◽  
G. Sagnes ◽  
G. Bastide ◽  
M. Rouzeyre
Keyword(s):  
Single Crystals ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Traps ◽  
Transient Spectroscopy

Variations of Electron Traps in MBE AlxGa1−xAs by Rapid Thermal Processing

1988 ◽  
Vol 126 ◽  
Author(s):  
H. Ueda ◽  
A. Kitagawa ◽  
Y. Tokuda ◽  
A. Usami ◽  
T. Wada ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Deep Level Transient Spectroscopy ◽  
Thermal Activation ◽  
Molecular Beam ◽  
Deep Level ◽  
Rapid Thermal Processing ◽  
Activation Energies ◽  
Electron Traps ◽  
Molecular Beam Epitaxial ◽  
Transient Spectroscopy

ABSTRACTUsing deep level transient spectroscopy we have studied the variations of electron traps in molecular beam epitaxial (MBE) AlxGa1−xAs by rapid thermal processing (RTP) using halogen lamps. RTP was performed at 700, 800 and 900 °C for 6s under a SiO2 cap and a capless condition. It is found that during RTP the electron traps with the thermal activation energies of 0.89 and 0.99 eV are produced in Al0.lGa0.9As and Al0.3Ga0.7As, respectively. The thermal activation energies of these traps are close to the reported ones for the trap EL2 in AlxGaM1−xAs. Therefore, these traps are probably related to the trap EL2. In the RTP samples under a capless condition, the concentrations of the trap EL2 in AlxGa1−xAs (x=0.1, 0.3) decreases from the surface to the deeper position in MBE layers, while the depth profile of the trap EL2 in GaAs is flat. It is suggested that the origin of the trap EL2 formation in AlxGa1−xAs is different from one in GaAs.

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

scholarly journals Effect of Nitrogen on the Growth of (100)-, (110)-, and (111)-Oriented Diamond Films

2020 ◽  
Vol 11 (1) ◽  
pp. 126
Author(s):  
Jen-Chuan Tung ◽  
Tsung-Che Li ◽  
Yen-Jui Teseng ◽  
Po-Liang Liu
Keyword(s):  
Growth Mechanism ◽  
Density Functional ◽  
Film Growth ◽  
Hydrogen Abstraction ◽  
Diamond Films ◽  
Activation Energies ◽  
Diamond Surface ◽  
Nitrogen Doped ◽  
Nitrogen Substitution ◽  
Diamond Film Growth

The aim of this research is the study of hydrogen abstraction reactions and methyl adsorption reactions on the surfaces of (100), (110), and (111) oriented nitrogen-doped diamond through first-principles density-functional calculations. The three steps of the growth mechanism for diamond thin films are hydrogen abstraction from the diamond surface, methyl adsorption on the diamond surface, and hydrogen abstraction from the methylated diamond surface. The activation energies for hydrogen abstraction from the surface of nitrogen-undoped and nitrogen-doped diamond (111) films were −0.64 and −2.95 eV, respectively. The results revealed that nitrogen substitution was beneficial for hydrogen abstraction and the subsequent adsorption of methyl molecules on the diamond (111) surface. The adsorption energy for methyl molecules on the diamond surface was generated during the growth of (100)-, (110)-, and (111)-oriented diamond films. Compared with nitrogen-doped diamond (100) films, adsorption energies for methyl molecule adsorption were by 0.14 and 0.69 eV higher for diamond (111) and (110) films, respectively. Moreover, compared with methylated diamond (100), the activation energies for hydrogen abstraction were by 0.36 and 1.25 eV higher from the surfaces of diamond (111) and (110), respectively. Growth mechanism simulations confirmed that nitrogen-doped diamond (100) films were preferred, which was in agreement with the experimental and theoretical observations of diamond film growth.

Improvement of the scintillation properties of Gd3 Ga3 Al2 O12 :Ce,B single crystals having tailored defect structure

2015 ◽  
Vol 9 (9) ◽  
pp. 530-534 ◽  
Author(s):  
M. Tyagi ◽  
A. K. Singh ◽  
S. G. Singh ◽  
D. G. Desai ◽  
G. D. Patra ◽  
...  
Keyword(s):  
Single Crystals ◽  
Defect Structure

scholarly journals Antiferromagnetic defect structure in LaNiO3−δ single crystals

2018 ◽  
Vol 2 (6) ◽  
Author(s):  
Bi-Xia Wang ◽  
S. Rosenkranz ◽  
X. Rui ◽  
Junjie Zhang ◽  
F. Ye ◽  
...  
Keyword(s):  
Single Crystals ◽  
Defect Structure

Defect structure in EuS single crystals grown from the melt

1979 ◽  
Vol 18 (1) ◽  
pp. 29-33 ◽  
Author(s):  
P. H. Chang ◽  
R. Herz ◽  
H. Strunk
Keyword(s):  
Single Crystals ◽  
Defect Structure
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