Defect structure in EuS single crystals grown from the melt

1979 ◽  
Vol 18 (1) ◽  
pp. 29-33 ◽  
Author(s):  
P. H. Chang ◽  
R. Herz ◽  
H. Strunk
2015 ◽  
Vol 9 (9) ◽  
pp. 530-534 ◽  
Author(s):  
M. Tyagi ◽  
A. K. Singh ◽  
S. G. Singh ◽  
D. G. Desai ◽  
G. D. Patra ◽  
...  

Author(s):  
Bi-Xia Wang ◽  
S. Rosenkranz ◽  
X. Rui ◽  
Junjie Zhang ◽  
F. Ye ◽  
...  

1996 ◽  
Vol 442 ◽  
Author(s):  
O.V. Astafiev ◽  
V.P. Kalinushkin ◽  
N.V. Abrosimov

AbstractMapping Low Angle Light Scattering method (MLALS) is proposed to study defect structure in materials used for solar cell production. Several types of defects are observed in Czochralski Si1−xGex (0.022<x<0.047) single crystals. Recombination activity of these defects is investigated. The possibility of contactless visualisation of grain boundary recombination in polysilicon is also demonstrated.


1992 ◽  
Vol 65 (5) ◽  
pp. 1021-1032 ◽  
Author(s):  
Richard A. Pethrick ◽  
John N. Sherwood ◽  
Choon Sup Yoon

2009 ◽  
Vol 54 (4) ◽  
pp. 572-583 ◽  
Author(s):  
E. A. Sulyanova ◽  
V. N. Molchanov ◽  
N. I. Sorokin ◽  
D. N. Karimov ◽  
S. N. Sulyanov ◽  
...  

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