Leakage and Transconductance in Polysilicon Thin Film Transistors: Effect of Grain Boundary Hydrogenation

1987 ◽  
Vol 106 ◽  
Author(s):  
Feng Qian ◽  
Dae M. Kim ◽  
Galen H. Kawamoto
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Point Of View ◽  
Boundary Properties

ABSTRACTThe n- and p-channel field effect transistors are fabricated in as-deposited and grain boundary passivated polysilicon thin films. The performance of these thin film transistors (TFT's) is characterized and compared. Specifically, the transconductance and leakage behavior are discussed in detail in correlation with the grain boundary properties. The I-V characteristics are modeled from a unified point of view.

Rapid Optimization of Pentacene Buffer for Rubrene Thin Film Transistors by Using Combinatorial MBE

2005 ◽  
Vol 894 ◽  
Author(s):  
Masamitsu Haemori ◽  
Jun Yamaguchi ◽  
Seiichiro Yaginuma ◽  
Kenjji Itaka ◽  
Hideomi Koinuma
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layer ◽  
Gradient Method ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Transistors

AbstractBy means of insertion of thin pentacene buffer layer, we have succeeded in the fabrication of highly c-axis oriented rubrene (5,6,11,12-tetraphenylnaphthacene) thin films and their field effect transistors (FETs). In the case without pentacene buffers, only amorphous rubrene films were obtained and their FETs did not show operation. After optimization of pentacene buffer by using combinatorial thickness-gradient method, we obtained the crystalline rubrene thin films and their FETs showed p-type operation with a mobility of 0.05 cm2/V·s and an on-off ratio of 106.

Vertical Conduction in the New Field Effect Transistors: p-Type and n-Type Vertical Channel Thin Film Transistors

2014 ◽  
Vol 23 (03n04) ◽  
pp. 1450023 ◽  
Author(s):  
Olivier Bonnaud ◽  
Peng Zhang ◽  
Emmanuel Jacques ◽  
Regis Rogel
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Substrate Surface ◽  
Vertical Channel ◽  
Electrical Behavior ◽  
Research Activities ◽  
P Type

In order to pursue the integration, the research activities were oriented during the last years towards channel conduction in a plan perpendicular to the substrate surface while in the traditional architectures the conduction is parallel to the surface, under the gate. In the integrated technologies, this approach led to the FinFET. But in this case, even though the conduction plan is perpendicular to the substrate surface, the direction of the drain currents remains parallel to the substrate. New electronics devices were designed with the channels vertically oriented. In the monolithic technologies, many drawbacks have stopped this trend. However, in the case of thin film technologies, the approach appeared more suitable. The channel conduction is thus vertically oriented. But a drawback comes from the leakage current flowing between source and drain. The introduction of an insulating barrier in-between and the decrease of the thickness of the channel active layer, led to electrical behavior much more suitable for applications. After an overview of the different approaches developed as well in monolithic technologies as in thin film technologies, this presentation will give details on the concept and on the fabrication process of quasi-vertical thin film transistors. The associated electrical results will be described, analyzed and commented.

Transistor application of new picene-type molecules, 2,9-dialkylated phenanthro[1,2-b:8,7-b′]dithiophenes

2015 ◽  
Vol 3 (10) ◽  
pp. 2413-2421 ◽  
Author(s):  
Yoshihiro Kubozono ◽  
Keita Hyodo ◽  
Hiroki Mori ◽  
Shino Hamao ◽  
Hidenori Goto ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistors

Field-effect transistors have been fabricated that use thin films of 2,9-dialkylated phenanthro[1,2-b:8,7-b′]dithiophenes (Cn-PDTs), with the transistor based on a thin film of C12-PDT showing aμas high as ∼2 cm2V−1s−1, which is promising for future practical electronics.

The effect of tuning the microstructure of TIPS-tetraazapentacene on the performance of solution processed thin film transistors

2016 ◽  
Vol 4 (6) ◽  
pp. 1194-1200 ◽  
Author(s):  
Fabian Paulus ◽  
Jens U. Engelhart ◽  
Paul E. Hopkinson ◽  
Christian Schimpf ◽  
Andreas Leineweber ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
Comprehensive Study

We report a comprehensive study of the symmetrical 6,13-bis(triisopropylsilylethynyl)tetraazapentacene used as an electron transporting material in organic field-effect transistors deposited by spin/zone-casting.

Phosphonic acid self-assembled monolayer improved the properties of n-type organic field-effect transistors in air ambient

RSC Advances ◽  
2016 ◽  
Vol 6 (92) ◽  
pp. 89794-89798 ◽  
Author(s):  
Li Cao ◽  
Yue Peng ◽  
Zhefeng Li
Keyword(s):  
Thin Film ◽  
Phosphonic Acid ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Close Packing ◽  
Organic Field Effect Transistors ◽  
Self Assembled Monolayer ◽  
Packing Arrangement

The electron mobilities of NDI-C14 based thin film transistors get a great improvement by vapor deposition on the surface of three SAMs modified SiO2 dielectric. This is associated with its close packing arrangement of NDI-C14 film on these SAMs.

Sign in / Sign up

Export Citation Format

Share Document