Transistor application of new picene-type molecules, 2,9-dialkylated phenanthro[1,2-b:8,7-b′]dithiophenes

2015 ◽  
Vol 3 (10) ◽  
pp. 2413-2421 ◽  
Author(s):  
Yoshihiro Kubozono ◽  
Keita Hyodo ◽  
Hiroki Mori ◽  
Shino Hamao ◽  
Hidenori Goto ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistors

Field-effect transistors have been fabricated that use thin films of 2,9-dialkylated phenanthro[1,2-b:8,7-b′]dithiophenes (Cn-PDTs), with the transistor based on a thin film of C12-PDT showing aμas high as ∼2 cm2V−1s−1, which is promising for future practical electronics.

Molecular-Wetting Control by Ultrasmooth Pentacene Buffer for High-crystallinity Organic Field-Effect Transistors

2006 ◽  
Vol 965 ◽  
Author(s):  
Kenji Itaka ◽  
Mitsugu Yamashiro ◽  
Jun Yamaguchi ◽  
Masamitsu Haemori ◽  
Seiichiro Yaginuma ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Molecular Electronics ◽  
Field Effect ◽  
High Performance ◽  
Organic Materials ◽  
Field Effect Transistors ◽  
Organic Thin Film ◽  
Dielectric Substrates ◽  
Pi Orbitals

ABSTRACTOrganic thin film devices are of interest for a variety of forthcoming ubiquitous electronics applications. In order to build ubiquitous high-performance devices, it is necessary to fabricate crystalline thin films of various organic materials onto “ubiquitous substrates” that are dictated by applications. However, many organic thin films crystallize only on a limited selection of substrates. Unfortunately, promising organic molecules, which have a large overlap of pi-orbitals between molecules, cannot migrate freely on a substrate because of stronger cohesion between molecules than interaction between the molecule and the substrate. Therefore, enhancement of the molecule-substrate interaction, i.e. ‘molecular wettability’ should promote crystallization. We found that an ultrasmooth monolayer of pentacene (C22H14), which can be grown on many general dielectric substrates, changes the molecular wettability of a substrate for other poorly wettable organic materials. We also demonstrate that a field effect transistor (FET) using a crystalline C60 thin film on a pentacene-buffered substrate can have a mobility of 4.9 cm2/Vs, which is 5-fold higher than that of C60 FETs without the buffer. Molecular wetting-controlled substrates can thus offer a general solution to the fabrication of high-performance crystalline plastic and molecular electronics.

Solution-grown unidirectionally oriented crystalline thin films of a U-shaped thienoacene-based semiconductor for high-performance organic field-effect transistors

2017 ◽  
Vol 5 (24) ◽  
pp. 5872-5876 ◽  
Author(s):  
Tatsuya Mori ◽  
Tatsuya Oyama ◽  
Hideaki Komiyama ◽  
Takuma Yasuda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Charge Transport ◽  
Transport Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Transistors ◽  
Organic Field Effect Transistors ◽  
Lamellar Structures

Strategically dialkylated bis(benzo[4,5]thieno)[2,3-b:3′,2′-d]thiophene molecules having an overall U-shaped configuration can self-organize into bilayer lamellar structures, demonstrating high charge-transport properties in thin-film organic transistors.

Conclusions and Future Aspects

2020 ◽  
pp. 216-222
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Drug Delivery ◽  
Solar Cell ◽  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Physiochemical Properties ◽  
Light Emitting ◽  
The Common

Polyaniline (PANI) is one of the common and extensively explored conducting polymers due to its excellent electrochemical and electrical properties. PANI thin film is an emerging area of research owing to its various applications in the field of solar cell technologies, drug delivery, organic light emitting diodes, field-effect transistors, sensors, electrochromic displays, etc. This chapter is devoted to the conclusions and future aspects of the undertaken studies in this book. This book has eight chapters that comprise the discussion of synthesis, deposition and characterization techniques, physiochemical properties, and applications of PANI thin films.

Leakage and Transconductance in Polysilicon Thin Film Transistors: Effect of Grain Boundary Hydrogenation

1987 ◽  
Vol 106 ◽  
Author(s):  
Feng Qian ◽  
Dae M. Kim ◽  
Galen H. Kawamoto
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Point Of View ◽  
Boundary Properties

ABSTRACTThe n- and p-channel field effect transistors are fabricated in as-deposited and grain boundary passivated polysilicon thin films. The performance of these thin film transistors (TFT's) is characterized and compared. Specifically, the transconductance and leakage behavior are discussed in detail in correlation with the grain boundary properties. The I-V characteristics are modeled from a unified point of view.

Metal-Semiconductor-Insulator-Metal Structure Field-Effect Transistors Based on Zinc Oxides and Doped Ferroelectric Thin Films

2014 ◽  
Vol 1633 ◽  
pp. 131-137 ◽  
Author(s):  
Ze Jia ◽  
Jianlong Xu ◽  
Xiao Wu ◽  
Mingming Zhang ◽  
Naiwen Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Sol Gel ◽  
Drain Current ◽  
Metal Structure ◽  
Ferroelectric Materials ◽  
Ferroelectric Thin Films

ABSTRACTDifferent ferroelectric thin films and their related Metal-Semiconductor-Insulator-Metal (MSIM) structures include zinc oxide (ZnO) are studied, which can be utilized in back-gated ferroelectric field-effect transistors (FETs). The most ideal zinc oxide (ZnO) thin film prepared by sol-gel method are obtained under the pyrolysis temperature of 400°C and the annealing temperature of 600°C. The asymmetric or symmetric current-voltage characteristics of the heterostructures with ZnO are exhibited depending on different ferroelectric materials in them. The curves of drain current versus gate voltage for MSIM-structure FETs are investigated, in which obvious counterclockwise loops and a drain current switching ratio up to two orders of magnitude ate observed due to the modulation effect of remnant polarization on the channel resistance. The results also indicate the positive influences of impurity atom substitution in bismuth ferrite thin film for the MSIM-structure FETs.

scholarly journals Air Processed Cs2AgBiBr6 Lead-free Double Perovskite High-mobility Thin Film Field-effect Transistors

2021 ◽  
Author(s):  
Gnanasampanthan Abiram ◽  
Fatemeh Heidari Gourji ◽  
Selvakumar Pitchaiya ◽  
Punniamoorthy Ravirajan ◽  
Thanihaichelvan Murugathas ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Perovskite ◽  
Hole Mobility ◽  
Channel Length ◽  
P Type

Abstract This study focuses on the fabrication and characterization of Cs2AgBiBr6 double perovskite thin film for field-effect transistor (FET) applications. The Cs2AgBiBr6 thin films were fabricated using a solution process technique and the observed XRD patterns demonstrate no diffraction peaks of secondary phases, which confirms the phase-pure crystalline nature. The average grain sizes of the spin-deposited film were also calculated by analysing the statistics of grain size in SEM image and was found to be around 412 (±44) nm the larger grain size was also confirmed by the XRD measurements. FETs with different channel lengths of Cs2AgBiBr6 thin films were fabricated on an electrode deposited heavily doped p-type Si substrate with a 300 nm thermally grown SiO2 dielectric under ideal conditions in air processing under ambient pressure and temperature. The Cs2AgBiBr6 FETs showed a p-type nature with a positive threshold voltage. The on current, threshold voltage and hole-mobility of the FETs decreased with increasing channel length. A high average hole mobility of 0.29 cm2s-1V-1 was obtained for the FETs with a channel length of 30 µm, and the hole mobility was reduced by an order of magnitude (0.012 cm2s-1V-1) when the channel length was doubled. The on current and hole-mobility of Cs2AgBiBr6 FETs followed a power fit, which confirmed the dominance of channel length in electrostatic gating in Cs2AgBiBr6 FETs. A very high-hole mobility observed in or FET that could be attributed to the much larger grain size of Cs2AgBiBr6 film made in this work.

Synthesis, characterization and fabrication of ultrathin iron pyrite (FeS2) thin films and field-effect transistors

RSC Advances ◽  
2016 ◽  
Vol 6 (10) ◽  
pp. 8290-8296 ◽  
Author(s):  
Xi Liu ◽  
Jacob Y. L. Ho ◽  
Man Wong ◽  
Hoi Sing Kwok ◽  
Zhaojun Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Iron Pyrite

We report the synthesis of an ultrathin FeS2thin filmviathermal sulfurization of an iron thin film. The FeS2based transistor not only broadens the applications of pyrite, but also provides a platform for investigating FeS2materials.

Rapid Optimization of Pentacene Buffer for Rubrene Thin Film Transistors by Using Combinatorial MBE

2005 ◽  
Vol 894 ◽  
Author(s):  
Masamitsu Haemori ◽  
Jun Yamaguchi ◽  
Seiichiro Yaginuma ◽  
Kenjji Itaka ◽  
Hideomi Koinuma
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layer ◽  
Gradient Method ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Transistors

AbstractBy means of insertion of thin pentacene buffer layer, we have succeeded in the fabrication of highly c-axis oriented rubrene (5,6,11,12-tetraphenylnaphthacene) thin films and their field effect transistors (FETs). In the case without pentacene buffers, only amorphous rubrene films were obtained and their FETs did not show operation. After optimization of pentacene buffer by using combinatorial thickness-gradient method, we obtained the crystalline rubrene thin films and their FETs showed p-type operation with a mobility of 0.05 cm2/V·s and an on-off ratio of 106.

Influence of Electric Field on Microstructures of Pentacene Thin-Films in Field-Effect Transistors

2008 ◽  
Vol 18 (2) ◽  
pp. 285-293 ◽  
Author(s):  
H. L. Cheng ◽  
W. Y. Chou ◽  
C. W. Kuo ◽  
Y. W. Wang ◽  
Y. S. Mai ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Field Effect ◽  
Field Effect Transistors
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