Grain Growth in Polycrystalline Silicon Films

1987 ◽  
Vol 106 ◽  
Author(s):  
C. V. Thompson
Keyword(s):  
Film Thickness ◽  
Grain Growth ◽  
Growth Rates ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Growth Enhancement ◽  
Grain Sizes ◽  
Grain Structures ◽  
Polycrystalline Silicon Films ◽  
Dopant Redistribution

ABSTRACTExperimental observations of recrystallization, normal grain growth and secondary grain growth in silicon films are reviewed. Normal grain growth leads to grain sizes which are approximately equal to the film thickness. Secondary grain growth can lead to larger grains with restricted crystallographic textures. These procesess are affected by the as-deposited or as-crystallized grain structures and orientations. The rate of grain growth has been shown to be higher in phosphorous or arsenic doped films. Ion bombardment, oxidation, and interactions with silicides also lead to increased grain growth rates. Grain growth enhancement has been related to increased point defect concentrations or dopant redistribution.

Grain Growth Processes during Transient Annealing of As-Implanted, Polycrystalline-Silicon Films

1984 ◽  
Vol 35 ◽  
Author(s):  
S.J. Krause ◽  
S.R. Wilson ◽  
W.M. Paulson ◽  
R.B. Gregory
Keyword(s):  
Growth Rate ◽  
Grain Size ◽  
Grain Growth ◽  
Polycrystalline Silicon ◽  
Average Diameter ◽  
Silicon Films ◽  
Growth Processes ◽  
Cross Sectional ◽  
Polycrystalline Silicon Films ◽  
Equiaxed Grains

ABSTRACTPolycrystalline silicon films of 300 nm thickness were deposited on oxidized wafer surfaces, implanted with As, and annealed on a Varian IA 200 rapid thermal annealer. Transmission electron microscopy was used to study through-thickness and cross sectional views of grain size and morphology of as-deposited and of transient annealed films. A bimoda] distribution of grain sizes was present in as-deposited polycrystalline silicon films. The first population was due to columnar growth of some grains to a final average diameter of 20 rm. The second population of small equiaxed grains of 5 nm average diameter were formed early in the deposition process. During transient annealing grains in the first population grew rapidly up to 280-nm equiaxed grains. After this the growth rate decreased due to the grain size reaching the thickness of the film. Grains in the second population grew rapidly up to a size of 150 nm, after which the growth rate was lowered due to grains impinging upon one another. The grain growth processes for both populations have been described with a modified model for interfacially driven grain growth. This model accounts for diffusion and grain growth which occur with rapidly rising and falling temperatures during short annealing times characteristic of transient annealing processes.

Grain growth of polycrystalline silicon films on SiO2by cw scanning electron beam annealing

1981 ◽  
Vol 39 (8) ◽  
pp. 645-647 ◽  
Author(s):  
Kenji Shibata ◽  
Tomoyasu Inoue ◽  
Tadahiro Takigawa ◽  
Shintaro Yoshii
Keyword(s):  
Electron Beam ◽  
Grain Growth ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Scanning Electron Beam ◽  
Polycrystalline Silicon Films ◽  
Scanning Electron

Grain growth during transient annealing of As‐implanted polycrystalline silicon films

1984 ◽  
Vol 45 (7) ◽  
pp. 778-780 ◽  
Author(s):  
S. J. Krause ◽  
S. R. Wilson ◽  
W. M. Paulson ◽  
R. B. Gregory
Keyword(s):  
Grain Growth ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Properties of furnace-annealed, high-resistivity, arsenic-implanted polycrystalline silicon films

1986 ◽  
Vol 1 (2) ◽  
pp. 311-321 ◽  
Author(s):  
W.K. Schubert
Keyword(s):  
Film Thickness ◽  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Large Fraction ◽  
Silicon Films ◽  
Grain Structure ◽  
High Resistivity ◽  
Simple Diffusion ◽  
Simple Diffusion Model ◽  
Polycrystalline Silicon Films

The approach to equilibrium of the grain structure and electrical properties has been studied in high-resistivity, As-implanted polycrystalline silicon films on thermally oxidized silicon wafers. Thermal annealing parameters are found to be critical in determining the film sheet resistance. Results from spreading resistance analysis, secondary ion mass spectroscopy, and transmission electron microscopy indicate that As diffusion down the grain boundaries into the film leads to a large fraction of the As being left in inactive grain boundary sites. Reactivation of the As is negligible when processing temperatures are 900 °C or lower. A relatively simple diffusion model has been developed that can fit the As concentration profile over the entire film thickness. This makes the model applicable to normal integrated circuit processing conditions where film thickness effects and nonequilibrium dopant distributions are important.

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