Improvement of Thermoelectric Properties of p- and n-types Oxide Thick Films Fabricated by Electrophoretic Deposition

2007 ◽  
Vol 1044 ◽  
Author(s):  
Masayuki Sakurai ◽  
Shigeru Horii ◽  
Ryoji Funahashi ◽  
Tetsuo Uchikoshi ◽  
Tohru Suzuki ◽  
...  
Keyword(s):  
Relative Density ◽  
Thermoelectric Properties ◽  
Electrophoretic Deposition ◽  
Hot Pressing ◽  
Thick Films ◽  
Pressing Temperature ◽  
Mono Layer ◽  
Fine Powders ◽  
Te Modules ◽  
Magnetically Aligned

AbstractWe report thermoelectric (TE) properties of mono-layer thick films of p-type [Ca2CoO3-δ]0.62CoO2 (Ca349) and n-type compounds of Ca0.9La0.1MnO3 (Mn113) and LaNi0.98Mo0.02O3 (Ni113) for the improvement of TE performance in multi-layered TE modules. In the case of magnetically aligned Ca349 film, the improvement of TE properties due to the reduction of resistivity (ρ) was achieved by optimization of hot-pressing temperature and ρ was sensitive to relative density of the Ca349 layer. For the decrease in ρ of the n-type layers, two different approaches, the choice of Ni113 as a n-type compound and usage of fine powders of Mn113, were attempted. Both approaches were effective for reducing ρ even in the sintering at ∼900°C.

Combustion Synthesis and Two-Time Densification of TiB2-Cu Composites

2007 ◽  
Vol 280-283 ◽  
pp. 1433-1436
Author(s):  
Chang Qing Hong ◽  
Xing Hong Zhang ◽  
Jie Cai Han ◽  
Qiang Xu ◽  
Xiao Dong He
Keyword(s):  
Flexural Strength ◽  
Relative Density ◽  
Combustion Synthesis ◽  
Hot Pressing ◽  
Hot Isostatic Pressing ◽  
Strength Increase ◽  
Pressing Temperature ◽  
Copper Powders ◽  
Hot Pressing Sintering ◽  
Thermal Physical Properties

TiB2 -Cu cermet with the relative density of 92% was produced from titanium, boron and copper powders by combustion synthesis and subsequently pseudo hot isostatic pressing. To improve its mechanical and thermal physical properties, the two-time hot pressing sintering test was carried out at 1050°, 1090° and 1150°C respectively. The deformation behavior and variation of micro- structure and mechanical properties were investigated in detail. The results showed that the relative density and the flexural strength increase remarkably after two-time hot pressing. The relative density reaches 605.5MPa and the flexural strength reaches 96% when the two-time pressing temperature is at 1090°C, and the values increase 12% and 6% compared to that before two-time pressing.

Thermoelectric Properties of P-Type (Bi1−xSbx)2Te3 Fabricated by Mechanical Alloying Process

1997 ◽  
Vol 478 ◽  
Author(s):  
Boo Yang Jung ◽  
Jae Shik Choi ◽  
Tae Sung Oh ◽  
Dow-Bin Hyun
Keyword(s):  
Mechanical Alloying ◽  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Alloy Powder ◽  
Figure Of Merit ◽  
Processing Time ◽  
Pressing Temperature ◽  
Acceptor Dopant ◽  
Maximum Value ◽  
P Type

AbstractThermoelectric properties of polycrystalline (Bi1−xSbx)2Te3 (0.75 ≤ x ≤ 0.85), fabricated by mechanical alloying and hot pressing methods, have been investigated. Formation of (Bi0.25Sb0.75)2Te3 alloy powder was completed by mechanical alloying for 5 hours at ball- to-material ratio of 5: 1, and processing time for (Bi1−xSbx)2Te3 formation increased with Sb2Te3 content x. When (Bi0.25Sb0.75)2Te3 was hot pressed at temperatures ranging from 300°C to 550°C for 30 minutes, figure-of-merit increased with hot pressing temperature and maximum value of 2.8 × 10−3/K could be obtained by hot pressing at 550°C. When hot pressed at 550°C, (Bi0.2Sb0.8)2Te3 exhibited figure-of-merit of 2.92 × 10−3/K, which could be improved to 2.97 × 10−3/K with addition of 1 wt% Sb as acceptor dopant.

scholarly journals Influence of hot pressing temperature on thermoelectric properties of type‐I clathrates

2014 ◽  
Vol 211 (6) ◽  
pp. 1282-1287 ◽  
Author(s):  
X. Yan ◽  
E. Bauer ◽  
P. Rogl ◽  
S. Paschen
Keyword(s):  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Type I ◽  
Pressing Temperature

Microstructural and Thermoelectric Properties of P-Type Te–Doped Bi0.5Sb1.5Te3 And N-Type SbI3-Doped Bi2Te2.85Se0.15 Compounds

1997 ◽  
Vol 478 ◽  
Author(s):  
J. Seo ◽  
K. Park ◽  
C. Lee ◽  
J. Kim
Keyword(s):  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Figure Of Merit ◽  
Crystalline Quality ◽  
Fracture Path ◽  
Pressing Temperature ◽  
High Crystalline Quality ◽  
Transgranular Cleavage ◽  
Temperature Range ◽  
P Type

AbstractThe p-type Te-doped Bi0.5Sb1.5Te3 and n-type SbI3-doped Bi2Te2.85Se0.15 thermoelectric compounds were fabricated by hot pressing in the temperature range of 380 to 440 °C under 200 MPa in Ar. Both the compounds were highly dense and showed high crystalline quality. The grains of the compounds were preferentially oriented and contained many dislocations through the hot pressing. The fracture path followed the transgranular cleavage planes, which are perpendicular to the c-axis. In addition, with increasing the pressing temperature, the figure of merit was increased. The highest values of figure of merit for the p- and n-type compounds, which were obtained at 420 °C, were 2.69 × 10−3/K and 2.35×10−3/K, respectively.

Sinterability of SiC powder coated uniformly with Al ions

1998 ◽  
Vol 13 (4) ◽  
pp. 816-820 ◽  
Author(s):  
Soichiro Sameshima ◽  
Keisuke Miyano ◽  
Yoshihiro Hirata
Keyword(s):  
Fracture Toughness ◽  
Flexural Strength ◽  
Crack Propagation ◽  
Relative Density ◽  
Hot Pressing ◽  
Nitrate Solution ◽  
Aluminum Nitrate ◽  
Pressing Temperature ◽  
Temperature Range ◽  
Aspect Ratios

SiC particles coated uniformly with Al ions (0.25 mass% Al2O3) in an aluminum nitrate solution were consolidated by filtration through a gypsum mold. Hot-pressing in vacuum gave dense SiC (above 99% relative density) in the temperature range of 1900–1950 °C under a pressure of 39 MPa. The microstructures of dense SiC consisted of 2–5 μm grains of low aspect ratios (below 2). The fracture toughness and flexural strength of SiC increased gradually as the hot-pressing temperature became higher and were 4.3 Mpa m0.5 and 350 MPa, respectively, with hot-pressing at 1950 °C. Crack propagation in SiC shifted from intergrain to intragrain with increasing hot-pressing temperature.

scholarly journals Microstructure and Thermoelectric Properties of (Bi0.48Sb1.52)Te3 Thick Films Prepared with Tape Casting Method

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 140
Author(s):  
Lichen Liu ◽  
Ziping Cao ◽  
Min Chen ◽  
Jun Jiang
Keyword(s):  
Thermoelectric Properties ◽  
Low Cost ◽  
Thick Films ◽  
Tape Casting ◽  
Casting Process ◽  
Casting Method ◽  
Glass Substrates ◽  
Conductive Films ◽  
Casting Technology

This paper reports the fabrication and characterization of (Bi0.48Sb1.52)Te3 thick films using a tape casting process on glass substrates. A slurry of thermoelectric (Bi0.48Sb1.52)Te3 was developed and cured thick films were annealed in a vacuum chamber at 500–600 °C. The microstructure of these films was analyzed, and the Seebeck coefficient and electric conductivity were tested. It was found that the subsequent annealing process must be carefully designed to achieve good thermoelectric properties of these samples. Conductive films were obtained after annealing and led to acceptable thermoelectric performance. While the properties of these initial materials are not at the level of bulk materials, this work demonstrates that the low-cost tape casting technology is promising for fabricating thermoelectric modules for energy conversion.

scholarly journals Mechanical and Thermoelectric Properties of Bulk AlSb Synthesized by Controlled Melting, Pulverizing and Subsequent Vacuum Hot Pressing

2019 ◽  
Vol 9 (8) ◽  
pp. 1609 ◽  
Author(s):  
A. K. M. Ashiquzzaman Shawon ◽  
Soon-Chul Ur
Keyword(s):  
Mechanical Properties ◽  
Intermetallic Compound ◽  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Single Phase ◽  
Aluminum Antimonide ◽  
Simple Method ◽  
Group Iii ◽  
Indirect Band Gap ◽  
First Time

Aluminum antimonide is a semiconductor of the Group III-V order. With a wide indirect band gap, AlSb is one of the least discovered of this family of semiconductors. Bulk synthesis of AlSb has been reported on numerous occasions, but obtaining a single phase has always proven to be extremely difficult. This work reports a simple method for the synthesis of single-phase AlSb. Subsequently, consolidation was done into a near single-phase highly dense semiconductor in a form usable for thermoelectric applications. Further, the thermoelectric properties of this system are accounted for the first time. In addition, the mechanical properties of the intermetallic compound are briefly discussed for a possibility of further use.

The Influence of Silicon Dopant and Processing on Thermoelectric Properties of B4C Ceramics

1998 ◽  
Vol 545 ◽  
Author(s):  
Ke-Feng Cai ◽  
Ce-Wen Nan ◽  
Xin-Min Min
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Figure Of Merit ◽  
Room Temperature ◽  
A Value ◽  
Si Doped

AbstractB4C ceramics doped with various content of Si (0 to 2.03 at%) are prepared via hot pressing. The composition and microstructure of the ceramics are characterized by means of XRD and EPMA. Their electrical conductivity and Seebeck coefficient of the samples are measured from room temperature up to 1500K. The electrical conductivity increases with temperature, and more rapidly after 1300K; the Seebeck coefficient of the ceramics also increases with temperature and rises to a value of about 320μVK−1. The value of the figure of merit of Si-doped B4C rises to about 4 × 10−4K−1 at 1500K.

Spark Plasma Sintering and Hot Pressing Sintering of Nanocrystalline WC-10CO-0.8VC

2007 ◽  
Vol 534-536 ◽  
pp. 1229-1232
Author(s):  
Li Hui Zhu ◽  
Guang Jie Shao ◽  
Yi Xiong Liu ◽  
Dave Siddle
Keyword(s):  
Relative Density ◽  
Spark Plasma Sintering ◽  
Hot Pressing ◽  
Nanocrystalline Powders ◽  
Microstructure And Properties ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Hot Pressing Sintering

WC-10Co-0.8VC nanocrystalline powders were sintered by spark plasma sintering (SPS) and hot pressing sintering (HPS), and the microstructure and properties were compared. Results show that, sintered at 1300°C, the sample prepared by SPS for only 3 minutes has higher density than that prepared by HPS for 60 minutes. SEM and SPM observation shows SPS at 1200°C has a more uniform and finer microstructure, and most of the WC grains are smaller than 100nm. It has a relative density of 95.1%, HV30 of 1887, and KIC of 11.5 MPam1/2. If a suitable sintering parameter is chosen, SPS is a promising consolidation technique to prepare nanocrystalline WC-10Co-0.8VC with improved properties.

Microwave activated hot pressing: A new opportunity to improve the thermoelectric properties of n⿿type Bi 2 Te 3⿿x Se x bulks

2016 ◽  
Vol 83 ◽  
pp. 122-127 ◽  
Author(s):  
Zhenzhou Rong ◽  
Xi⿿an Fan ◽  
Fan Yang ◽  
Xinzhi Cai ◽  
Xuewu Han ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Hot Pressing
Sign in / Sign up

Export Citation Format

Share Document