Photoluminescence Characterization of Heteroepitaxial ZnSe/GaAs and ZnSe/AlAs Grown By MBE

1987 ◽  
Vol 102 ◽  
Author(s):  
B. J. Skromme ◽  
M. C. Tamargo ◽  
J. L. De Miguel ◽  
R. E. Nahory
Keyword(s):  
Buffer Layer ◽  
Molecular Beam ◽  
Crystal Defects ◽  
Buffer Layers ◽  
Acceptor Pair ◽  
Strain Fields ◽  
Donor Acceptor ◽  
Tentative Explanation ◽  
Donor Acceptor Pair

ABSTRACTHeteroepitaxial ZnSe grown by molecular beam epitaxy (MBE) has been characterized using low temperature photoluminescence (PL) and reflectance. Excitonic PL linewidths of thick (relaxed) ZnSe layers are>1.4 meV, and depend little on the type of substrate or buffer layer used (e.g. GaAs or AlAs). In contrast, thin (pseudomorphic) ZnSe layers on AlAs buffer layers of moderate thickness are found to exhibit by far the sharpest (FWHM=0.22-0.37 meV) excitonic features ever observed for heteroepitaxial ZnSe grown by any technique. A tentative explanation for this result is that step-grading the lattice constant (by the AlAs buffer layer) has eliminated the crystal defects which produce localized strain fields that inhomogeneously broaden the peaks in ZnSe/GaAs. Acceptor-related PL peaks are discussed, and the first discrete donor-acceptor pair line spectrum in heteroepitaxial ZnSe is reported.

Photoluminescence Characterization of p-type GaN:Mg

1997 ◽  
Vol 482 ◽  
Author(s):  
Dorina Corlatan ◽  
Joachim Krüger ◽  
Christian Kisielowski ◽  
Ralf Klockenbrink ◽  
Yihwan Kim ◽  
...  
Keyword(s):  
Layer Structure ◽  
Growth Conditions ◽  
Buffer Layers ◽  
Near Band Edge ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Si Doped ◽  
P Type ◽  
Mg Doped

AbstractWe report on results of low-temperature photoluminescence measurements performed on GaN films, grown by molecular beam epitaxy (MBE) on sapphire substrates. The GaN films are either Mg doped (p-type) or consist of a Mg-doped layer on top of a Si doped GaN layer (n-type). In the p-doped samples, the sharpness of the donor-acceptor-pair transition is striking, three phonon replicas are clearly resolved. A transition band occurs around 3.4 eV, which becomes dominant for samples with an np-layer structure. The position and the composition of the near band edge transitions are influenced by the growth of the buffer layers. Depending on the growth conditions a transition at 3.51 eV can be observed.

Donor–acceptor pair luminescence of nitrogen doping p-type ZnO by plasma-assisted molecular beam epitaxy

2007 ◽  
Vol 122-123 ◽  
pp. 368-370 ◽  
Author(s):  
S.J. Jiao ◽  
Y.M. Lu ◽  
D.Z. Shen ◽  
Z.Z. Zhang ◽  
B.H. Li ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Nitrogen Doping ◽  
Molecular Beam ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
P Type

Spectroscopic Characterization of Ion-Implanted GaN

2002 ◽  
Vol 743 ◽  
Author(s):  
L. Chen ◽  
B. J. Skromme
Keyword(s):  
Low Temperature ◽  
High Purity ◽  
Spectroscopic Characterization ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Optical Activation ◽  
Donor Acceptor Pair ◽  
Low Temperature Photoluminescence ◽  
Do So

ABSTRACTWe investigate implantation of high purity HVPE GaN with Mg, Be, C, Zn, Cd, Ca, N, O, P, As, Ne, and Ar. After annealing at 1300 °C, the material is characterized using low temperature photoluminescence (PL). The Mg acceptors exhibit much better optical activation than Be, C, Zn, Cd, or Ca acceptors implanted and annealed under the same conditions. Acceptor-bound exciton peaks and well-resolved donor-acceptor pair bands are observed for both Mg and Zn. A broad peak centered near 2.78 eV is obtained for Cd, confirming that it is deeper than Zn. Isoelectronic As or P exhibit sharp no-phonon bound exciton lines at 2.952 and 3.200 eV, respectively. Defect-related bands centered at 2.2 and 2.35 eV are studied. Both Be and C strongly enhance the yellow (2.2 eV) PL band, but no other impurities do so, including O.

Thermal Activation of Beryllium in GaN Grown by RF-Plasma Molecular Beam Epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
B. L. VanMil ◽  
Kyoungnae Lee ◽  
Lijun Wang ◽  
N. C. Giles ◽  
T. H. Myers
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Activation ◽  
Molecular Beam ◽  
Rf Plasma ◽  
Acceptor Pair ◽  
Pure Nitrogen ◽  
Donor Acceptor ◽  
Hydrogen Mixtures ◽  
Donor Acceptor Pair ◽  
Polar Mechanism

ABSTRACTDifferences in the optical activity of Be in GaN epilayers grown on different surface polarities by rf-plasma molecular beam epitaxy are investigated. Nitrogen-polar GaN doped with Be exhibits a significantly higher intensity of donor-acceptor pair (DAP) photoluminescence (PL) than similarly doped Ga-polar GaN, indicating the Be is incorporating at microscopically different sites, or possibly is forming different compensating complexes. Highly Be-doped Ga-polar GaN apparently forms isolated polarity-inverted regions which then incorporate Be via the N-polar mechanism resulting in the DAP PL. High temperature annealing of the Ga-polar layers both under nitrogen/hydrogen mixtures and under pure nitrogen atmospheres activates the DAP PL.

scholarly journals Characterization of donor–acceptor-pair emission in fluorescent 6H-SiC

2012 ◽  
Vol T148 ◽  
pp. 014003 ◽  
Author(s):  
Yiyu Ou ◽  
Valdas Jokubavicius ◽  
Margareta Linnarsson ◽  
Rositza Yakimova ◽  
Mikael Syväjärvi ◽  
...  
Keyword(s):  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

High quantum efficiency of photoluminescence in GaN and ZnO

2005 ◽  
Vol 892 ◽  
Author(s):  
Michael A. Reshchikov ◽  
Xing Gu ◽  
Bill Nemeth ◽  
Jeff Nause ◽  
Hadis Morkoç
Keyword(s):  
Quantum Efficiency ◽  
Molecular Beam ◽  
Shallow Donor ◽  
Nonradiative Recombination ◽  
Acceptor Pair ◽  
High Quantum Efficiency ◽  
Donor Acceptor ◽  
Si Doped ◽  
Donor Acceptor Pair ◽  
Zno Crystal

AbstractThe quantum efficiency (QE) of photoluminescence (PL) has been estimated in GaN and ZnO samples. A Si-doped GaN layer grown by molecular beam epitaxy (MBE) exhibited the highest QE of about 90% at low temperatures. Recombination via the shallow donor-acceptor pair transitions dominated in this sample. In contrast, a bulk ZnO crystal with the QE of PL of about 85% contained almost no defect- or impurity-related PL signatures besides the emission attributed to free and bound excitons. The sources of radiative and nonradiative recombination in GaN and ZnO are discussed.

Structural and Optical Characterization of CuxGaySe2Thin Films under Excitation with Above and Below Band Gap Laser Light

2002 ◽  
Vol 730 ◽  
Author(s):  
C. Xue ◽  
D. Papadimitriou ◽  
Y.S. Raptis ◽  
T. Riedle ◽  
N. Esser ◽  
...  
Keyword(s):  
Band Gap ◽  
Raman Spectra ◽  
Laser Light ◽  
Film Surface ◽  
Shallow Donor ◽  
Acceptor Pair ◽  
Donor And Acceptor ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

AbstractCuxGaySe2MOCVD and PVD grown films were structurally and optically characterized by Raman, Micro-Raman and photoluminescence spectroscopy. Defect related photoluminescence excitation with wavelengths varying across the material band gap reveals: a) in Cu-rich CuGaSe2films, three band edge splitting due to the spin-orbit interaction and the crystal field, and donor-acceptor pair recombination between a shallow donor and two different acceptor levels, and b) in Ga-rich CuGaSe2films, donor-acceptor pair transitions between quasi-continua of donor and acceptor levels related to potential fluctuations. Raman spectra of CuxGaySe2films, excited by laser light near and below the material band gap, show intense modes at 197cm-1, 187cm-1, and 277cm-1, which can be used as indicators of crystallinity and Ga-content of the films. Polarization- and angular- dependent micro-Raman spectra of MOCVD CuGaSe2indicate that CuxSey-crystallites, dispersed on the surface of Cu-rich films, are grown oriented with their c-axis perpendicular to the film surface.

Characterization of the donor-acceptor-pair transition in Nitrogen-implanted zinc oxide

2008 ◽  
Vol 103 (8) ◽  
pp. 083513 ◽  
Author(s):  
D. Stichtenoth ◽  
J. Dürr ◽  
C. Ronning ◽  
L. Wischmeier ◽  
T. Voss
Keyword(s):  
Zinc Oxide ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair
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