Donor-acceptor-pair photoluminescence in Ga-doped ZnO thin films grown by plasma-assisted molecular beam epitaxy

2010 ◽  
Vol 28 (3) ◽  
pp. C3D6-C3D9 ◽  
Author(s):  
Z. Yang ◽  
J. L. Liu
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Thin Films ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Doped Zno ◽  
Donor Acceptor Pair

Donor–acceptor pair luminescence of nitrogen doping p-type ZnO by plasma-assisted molecular beam epitaxy

2007 ◽  
Vol 122-123 ◽  
pp. 368-370 ◽  
Author(s):  
S.J. Jiao ◽  
Y.M. Lu ◽  
D.Z. Shen ◽  
Z.Z. Zhang ◽  
B.H. Li ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Nitrogen Doping ◽  
Molecular Beam ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair ◽  
P Type

Donor–acceptor pair recombination in non-stoichiometric ZnO thin films

2010 ◽  
Vol 150 (7-8) ◽  
pp. 379-382 ◽  
Author(s):  
Christof P. Dietrich ◽  
Martin Lange ◽  
Gabriele Benndorf ◽  
Holger von Wenckstern ◽  
Marius Grundmann
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Thermal Activation of Beryllium in GaN Grown by RF-Plasma Molecular Beam Epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
B. L. VanMil ◽  
Kyoungnae Lee ◽  
Lijun Wang ◽  
N. C. Giles ◽  
T. H. Myers
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Activation ◽  
Molecular Beam ◽  
Rf Plasma ◽  
Acceptor Pair ◽  
Pure Nitrogen ◽  
Donor Acceptor ◽  
Hydrogen Mixtures ◽  
Donor Acceptor Pair ◽  
Polar Mechanism

ABSTRACTDifferences in the optical activity of Be in GaN epilayers grown on different surface polarities by rf-plasma molecular beam epitaxy are investigated. Nitrogen-polar GaN doped with Be exhibits a significantly higher intensity of donor-acceptor pair (DAP) photoluminescence (PL) than similarly doped Ga-polar GaN, indicating the Be is incorporating at microscopically different sites, or possibly is forming different compensating complexes. Highly Be-doped Ga-polar GaN apparently forms isolated polarity-inverted regions which then incorporate Be via the N-polar mechanism resulting in the DAP PL. High temperature annealing of the Ga-polar layers both under nitrogen/hydrogen mixtures and under pure nitrogen atmospheres activates the DAP PL.

Epitaxial Properties of Co-Doped ZnO Thin Films Grown by Plasma Assisted Molecular Beam Epitaxy

2007 ◽  
Vol 24 (10) ◽  
pp. 2951-2954 ◽  
Author(s):  
Cao Qiang ◽  
Deng Jiang-Xia ◽  
Liu Guo-Lei ◽  
Chen Yan-Xue ◽  
Yan Shi-Shen ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Co Doped

A study of the grain size and electric properties of Mn-doped ZnO thin films grown by plasma-assisted molecular beam epitaxy

2009 ◽  
Vol 6 (6) ◽  
pp. 1468-1471 ◽  
Author(s):  
Hung-Ji Lin ◽  
Der-Yuh Lin ◽  
Jia-Zheng Hong ◽  
Chu-Shou Yang ◽  
Chih-Ming Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electric Properties ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Mn Doped

Donor acceptor pair in molecular beam epitaxy grown GaN

1997 ◽  
Vol 43 (1-3) ◽  
pp. 242-245 ◽  
Author(s):  
G.B. Ren ◽  
D.J. Dewsnip ◽  
D.E. Lacklison ◽  
J.W. Orton ◽  
T.S. Cheng ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Acceptor Pair ◽  
Donor Acceptor ◽  
Donor Acceptor Pair
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