Structural, optical, and acoustic characterization of high-quality AlN thick films sputtered on Al2O3(0001) at low temperature for GHz-band electroacoustic devices applications

2004 ◽  
Vol 96 (5) ◽  
pp. 2610-2615 ◽  
Author(s):  
Cinzia Caliendo ◽  
Patrizia Imperatori
Keyword(s):  
Low Temperature ◽  
Thick Films ◽  
High Quality ◽  
Acoustic Characterization

Low temperature acoustic characterization of PMN single crystal

2017 ◽  
Vol 122 (8) ◽  
pp. 084103 ◽  
Author(s):  
E. Smirnova ◽  
A. Sotnikov ◽  
S. Ktitorov ◽  
H. Schmidt
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Acoustic Characterization

Construction and Characterization of a Portable Sound Booth for Onsite Voice Recording

2011 ◽  
Vol 26 (3) ◽  
pp. 140-145
Author(s):  
Christophe E Jackson ◽  
John T Tarvin ◽  
Paul A Richardson ◽  
Stephen A Watts ◽  
Paul F Castellanos
Keyword(s):  
Frequency Change ◽  
Negative Effects ◽  
High Quality ◽  
Professional Literature ◽  
Modified Method ◽  
Acoustic Characterization ◽  
Intensity Response ◽  
Anechoic Chambers ◽  
Voice Recording

The negative effects of environmental noise on sound recordings are recognized in the professional literature. Sound booths and anechoic chambers are examples of controlled acoustical environments widely used in research. However, both enclosures are expensive, require substantial space, and are not portable. Our research has been directed to measuring vocal endurance and voice characteristics of singers before and after sustained voice use. Our desire to acquire high-quality onsite recordings necessitated the development of a portable recording environment. In this article, we report the design, construction, and acoustic characterization of a prototype portable sound box (PSB) to acquire high-quality voice recordings in a controlled, portable acoustical measurement. Simulations were conducted to model the intended use of the PSB by voice users, using two acoustic characterization procedures. The first method showed higher intensity variations by region and depth as frequency changed. For the modified method, intensity response was more uniform and displayed less variation with frequency change. Both methods enabled us to (1) refine the onsite recording procedure, (2) provide insight into potential sources of analysis errors, and (3) develop detailed analysis of frequency intensity response affected by equipment variability. We found that it is possible to construct a PSB for onsite high-quality voice recording.

Characterization of high quality a-Si:H for solar cells at low energy and at low temperature by PDS

1994 ◽  
Vol 34 (1-4) ◽  
pp. 549-555 ◽  
Author(s):  
S. Nonomura ◽  
T. Nishiwaki ◽  
E. Nishimura ◽  
S. Hasegawa ◽  
T. Itoh ◽  
...  
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Low Energy ◽  
High Quality

Chemical Beam Epitaxial Growth and Capacitance-Voltage Characterization of Si δ-Doped GaAs

1987 ◽  
Vol 102 ◽  
Author(s):  
T. H. Chiu ◽  
E. F. Schubert ◽  
J. E. Cunningham ◽  
W. T. Tsang ◽  
B. Tell
Keyword(s):  
Low Temperature ◽  
Electron Concentration ◽  
Chemical Beam Epitaxy ◽  
High Quality ◽  
Acceptor Concentration ◽  
Capacitance Voltage ◽  
Doping Technique ◽  
Peak Widths ◽  
Undoped Gaas

ABSTRACTHigh quality GaAs layers have been grown by chemical beam epitaxy using triethylgallium and arsine. Undoped GaAs epilayer with net acceptor concentration NA - ND = 3}10 14cm-3 has been obtained at a low growth temperature of 500°C. Si dopant diffusion at such low temperature during growth is negligible. Using monolayer doping technique epilayers with Si impurities localized in a 2-dimensional plane were prepared. Capacitance-voltage profiling showed a high sheet electron concentration of lx1013cm-2 and peak widths of 22Å and 18Å at 300K and 77K, respectively, which are the narrowest ever reported. For samples grown or annealed at higher temperatures, significant impurity diffusion was observed.

Low temperature synthesis and characterization of substitutional Na-modified K2Ti6O13 nanobelts with improved photocatalytic activity under UV irradiation

RSC Advances ◽  
2015 ◽  
Vol 5 (81) ◽  
pp. 66086-66095 ◽  
Author(s):  
Qiang Wang ◽  
Qingjun Guo ◽  
Bing Li
Keyword(s):  
Photocatalytic Activity ◽  
Low Temperature ◽  
Uv Irradiation ◽  
Synthesis And Characterization ◽  
High Quality ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis

High-quality substitutional Na-modified K2Ti6O13 nanobelts with improved photocatalytic activity were synthesized efficiently from NaCl–KCl melts below 700 °C.

Preparation and characterization of high-quality TiN films at low temperature by filtered cathode arc plasma

2004 ◽  
Vol 22 (6) ◽  
pp. 2419-2423 ◽  
Author(s):  
Y. J. Zhang ◽  
P. X. Yan ◽  
Z. G. Wu ◽  
J. W. Xu ◽  
W. W. Zhang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Arc Plasma ◽  
High Quality ◽  
Tin Films ◽  
Cathode Arc

LARGE PIEZOELECTRIC EFFECT IN LOW-TEMPERATURE-SINTERED LEAD-FREE (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 THICK FILMS

2012 ◽  
Vol 05 (03) ◽  
pp. 1250029 ◽  
Author(s):  
ZUYONG FENG ◽  
DONGQI SHI ◽  
SHIXUE DOU ◽  
YIHUA HU ◽  
XINGUI TANG
Keyword(s):  
Low Temperature ◽  
Microelectromechanical Systems ◽  
Piezoelectric Effect ◽  
Sintering Temperature ◽  
Thick Films ◽  
Lead Free ◽  
High Quality ◽  
Sintering Aid ◽  
Promising Application ◽  
Low Sintering Temperature

High-quality piezoelectric ( Ba 0.85 Ca 0.15)( Zr 0.1 Ti 0.9) O 3 thick films with dense and homogenous microstructures were fabricated at a low sintering temperature (900°C) using a CuBi 2 O 4 sintering aid. The 10 μm thick film exhibited a high longitudinal piezoelectric constant d33, eff of 210 pC/N with estimated unconstrained d33 value of 560 pC/N very close to that in the corresponding bulks. Such excellent piezoelectric effect in the low-temperature sintered ( Ba 0.85 Ca 0.15)( Zr 0.1 Ti 0.9) O 3 thick films is comparable to the case of lead-based PZT thick films, and may be a promising application in lead-free microdevices such as piezoelectric microelectromechanical systems (MEMS).

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