II–VI / III–V Heterostructures

MRS Proceedings ◽

10.1557/proc-102-113 ◽

1987 ◽

Vol 102 ◽

Cited By ~ 2

Author(s):

L. A. Kolodziejski ◽

R. L. Gunshor ◽

N. Otsuka ◽

A. V. Nurmikko

Keyword(s):

Quantum Wells ◽

Optoelectronic Device ◽

Substrate Material ◽

Material System ◽

Lattice Match ◽

Molecular Beam Epitaxial ◽

Gaas Devices ◽

Recent Developments ◽

Device Applications ◽

Common Substrate

ABSTRACTThe integration of several optoelectronic device functions onto a common substrate material is an area which is currently being actively pursued. In an effort to achieve this objective, experiments are under way to examine the epitaxial growth and material properties of a variety of both II–VI and III–V compounds grown on a substrate where the II–VI/III–V heterostructure can be utilized. This paper describes some recent developments involving the molecular beam epitaxial (MBE) growth and characterization of two important II–VI/III–V heterostructures: ZnSe/GaAs and InSb/CdTe;. a comparison is made between epitaxial layer/substrate interfaces and epilayer/epilayer interfaces for both heterostructures. The ZnSe/GaAs heterointerface, having a 0.25% lattice constant mismatch, has potential for use in passivation of GaAs devices. The InSb/CdTe heterointerface possesses an even closer lattice match, ∼0.05% (comparable to the (Al,Ga)As/GaAs material system), and is motivated by possible device applications provided by InSb/CdTe quantum wells.

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Structural and optical properties of AlInAs/InP and GaPSb/InP type II interfaces

Canadian Journal of Physics ◽

10.1139/p96-032 ◽

1996 ◽

Vol 74 (5-6) ◽

pp. 202-208 ◽

Cited By ~ 5

Author(s):

M. Sacilotti ◽

P. Abraham ◽

M. Pitaval ◽

M. Ambri ◽

T. Benyattou ◽

...

Keyword(s):

Optical Properties ◽

Quantum Wells ◽

Optoelectronic Device ◽

Conduction Band Edge ◽

Type Ii ◽

Semiconducting Materials ◽

Band Bending ◽

Device Applications ◽

Pl Intensity ◽

Material Forming

We present a study of type II interfaces between semiconducting materials. In this type of interface the lineup of the two semiconductor band gaps has a staggered shape. The band bending at the interface depends on the doping type and concentration of the two semiconductors involved. In most cases two triangular quantum wells appear at the interface, one for the electrons in the semiconductor having the lowest conduction band edge and one in the other material for holes. In such a case, when charges are injected, the electrons and holes are separated at the interface, so that the electron/hole recombination occurs through the interface. The main characteristic of type II interfaces is that their photoluminescent (PL) intensity is very high compared with each material forming the heterojunction. This high PL intensity can be used advantageously in optoelectronic device applications. We present semiconductor pairs for which it is possible to have type II interfaces and their optical properties. We will emphasize particularly the cases of AlInAs/InP and GaPSb/InP whose low-temperature interface recombination energies are 1.2 and 0.90 eV, respectively.

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Masked growth of InGaAsP‐based quantum wells for optoelectronic device applications

Applied Physics Letters ◽

10.1063/1.108612 ◽

1993 ◽

Vol 62 (14) ◽

pp. 1641-1643 ◽

Cited By ~ 9

Author(s):

Y. Chen ◽

T. H. Chiu ◽

J. E. Zucker ◽

S. N. G. Chu

Keyword(s):

Quantum Wells ◽

Optoelectronic Device ◽

Device Applications

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Pseudomorphic InGaAs/GaAs and GaAs/A1GaAs asymmetric triangular quantum wells grown by MBE for optoelectronic device applications

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90693-q ◽

1993 ◽

Vol 127 (1-4) ◽

pp. 606-610 ◽

Cited By ~ 5

Author(s):

Ravi Droopad ◽

Don S. Gerber ◽

Calvin Choi ◽

George N. Maracas

Keyword(s):

Quantum Wells ◽

Optoelectronic Device ◽

Device Applications

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Cation Interdiffusion in GaInP/GaAs Single Quantum Wells

MRS Proceedings ◽

10.1557/proc-484-441 ◽

1997 ◽

Vol 484 ◽

Cited By ~ 1

Author(s):

Joseph Micallef ◽

Andrea Brincat ◽

Wai-Chee Shiu

Keyword(s):

Quantum Wells ◽

Large Strain ◽

Error Function ◽

Fundamental Absorption Edge ◽

Red Shift ◽

Material System ◽

Single Quantum ◽

Carrier Confinement ◽

Device Applications ◽

Cation Interdiffusion

AbstractThe effects of cation interdiffusion in Ga0.51In0.49P/GaAs single quantum wells are investigated using an error function distribution to model the compositional profile after interdiffusion. Two interdiffusion conditions are considered: cation only interdiffusion. and dominant cation interdiffusion. For both conditions the fundamental absorption edge exhibits a red shift with interdiffusion, with a large strain build up taking place in the early stages of interdiffusion. In the case of cation only interdiffusion, an abrupt carrier confinement profile is maintained even after significant interdiffusion, with a well width equal to that of the as-grown quantum well. When the interdiffusion takes place on two sublattices. but with the cation interdiffusion dominant, the red shift saturates and then decreases. The model results are consistent with reported experimental results. The effects of the interdiffusion-induced strain on the carrier confinement profile can be of interest for device applications in this material system.

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Al rich AlN/AlGaN Quantum Wells

MRS Proceedings ◽

10.1557/proc-0955-i02-04 ◽

2006 ◽

Vol 955 ◽

Author(s):

Talal Mohammed Ahmad Al tahtamouni ◽

Neeraj Nepal ◽

Jingyu Lin ◽

Hongxing Jiang

Keyword(s):

Quantum Wells ◽

Vapor Deposition ◽

Quantum Confinement ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Optoelectronic Device ◽

Peak Position ◽

Emission Efficiency ◽

Device Applications ◽

Deep Ultraviolet

ABSTRACTTwo sets of AlN/AlxGa1−xN quantum wells (QW) have been grown by metalorganic chemical vapor deposition (MOCVD). The first set consists of five samples of AlN/AlxGa1−xN QWs with (x ∼ 0.65) with well width, Lw, varying from 1 to 3 nm. The second set consists of four samples of AlN/AlxGa1−xN with (Lw = 1.5 nm) with Al composition, x, varying from 0.70 to 0.85. Low temperature photoluminescence (PL) spectroscopy has been employed to study the Lw dependence of the PL spectral peak position, emission efficiency, and line width. Our results have shown that these AlN/AlGaN QW structures exhibit polarization fields of ∼ 4 MV/cm. Due to effects of quantum confinement and polarization fields, AlN/AlGaN QWs with Lw between 2 and 2.5 nm exhibit the highest quantum efficiency. The dependence of the emission linewidth on Lw yielded a linear relationship. The implications of our results on deep ultraviolet (UV) optoelectronic device applications are also discussed.

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Strained InAs/InP quantum wells and quantum dots for optoelectronic device applications

10.1117/12.206337 ◽

1995 ◽

Cited By ~ 3

Author(s):

Remo A. Masut ◽

C. A. Tran ◽

Marc Beaudoin ◽

Richard Leonelli

Keyword(s):

Quantum Dots ◽

Quantum Wells ◽

Optoelectronic Device ◽

Device Applications

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TEM and cathodoluminescence of precipitates in II-VI semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100104509 ◽

1988 ◽

Vol 46 ◽

pp. 488-489

Author(s):

Joanna L. Batstone

Keyword(s):

Crystal Growth ◽

Band Gap ◽

Local Strain ◽

Wide Band ◽

Optoelectronic Device ◽

Wide Band Gap ◽

Bulk Crystal Growth ◽

Transmission Electron ◽

Device Applications ◽

Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

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Defects in β-SiC thin films grown on α-SiC substrates

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010010490x ◽

1988 ◽

Vol 46 ◽

pp. 568-569

Author(s):

Karren L. More

Keyword(s):

Thin Films ◽

Semiconductor Device ◽

Lattice Mismatch ◽

Chemical Vapor ◽

Substrate Material ◽

Growth Interface ◽

Si Substrates ◽

Thermal Expansion Coefficients ◽

Device Applications ◽

Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

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