Masked growth of InGaAsP‐based quantum wells for optoelectronic device applications

1993 ◽  
Vol 62 (14) ◽  
pp. 1641-1643 ◽  
Author(s):  
Y. Chen ◽  
T. H. Chiu ◽  
J. E. Zucker ◽  
S. N. G. Chu
Keyword(s):  
Quantum Wells ◽  
Optoelectronic Device ◽  
Device Applications

Structural and optical properties of AlInAs/InP and GaPSb/InP type II interfaces

1996 ◽  
Vol 74 (5-6) ◽  
pp. 202-208 ◽  
Author(s):  
M. Sacilotti ◽  
P. Abraham ◽  
M. Pitaval ◽  
M. Ambri ◽  
T. Benyattou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Optoelectronic Device ◽  
Conduction Band Edge ◽  
Type Ii ◽  
Semiconducting Materials ◽  
Band Bending ◽  
Device Applications ◽  
Pl Intensity ◽  
Material Forming

We present a study of type II interfaces between semiconducting materials. In this type of interface the lineup of the two semiconductor band gaps has a staggered shape. The band bending at the interface depends on the doping type and concentration of the two semiconductors involved. In most cases two triangular quantum wells appear at the interface, one for the electrons in the semiconductor having the lowest conduction band edge and one in the other material for holes. In such a case, when charges are injected, the electrons and holes are separated at the interface, so that the electron/hole recombination occurs through the interface. The main characteristic of type II interfaces is that their photoluminescent (PL) intensity is very high compared with each material forming the heterojunction. This high PL intensity can be used advantageously in optoelectronic device applications. We present semiconductor pairs for which it is possible to have type II interfaces and their optical properties. We will emphasize particularly the cases of AlInAs/InP and GaPSb/InP whose low-temperature interface recombination energies are 1.2 and 0.90 eV, respectively.

Al rich AlN/AlGaN Quantum Wells

2006 ◽  
Vol 955 ◽  
Author(s):  
Talal Mohammed Ahmad Al tahtamouni ◽  
Neeraj Nepal ◽  
Jingyu Lin ◽  
Hongxing Jiang
Keyword(s):  
Quantum Wells ◽  
Vapor Deposition ◽  
Quantum Confinement ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Optoelectronic Device ◽  
Peak Position ◽  
Emission Efficiency ◽  
Device Applications ◽  
Deep Ultraviolet

ABSTRACTTwo sets of AlN/AlxGa1−xN quantum wells (QW) have been grown by metalorganic chemical vapor deposition (MOCVD). The first set consists of five samples of AlN/AlxGa1−xN QWs with (x ∼ 0.65) with well width, Lw, varying from 1 to 3 nm. The second set consists of four samples of AlN/AlxGa1−xN with (Lw = 1.5 nm) with Al composition, x, varying from 0.70 to 0.85. Low temperature photoluminescence (PL) spectroscopy has been employed to study the Lw dependence of the PL spectral peak position, emission efficiency, and line width. Our results have shown that these AlN/AlGaN QW structures exhibit polarization fields of ∼ 4 MV/cm. Due to effects of quantum confinement and polarization fields, AlN/AlGaN QWs with Lw between 2 and 2.5 nm exhibit the highest quantum efficiency. The dependence of the emission linewidth on Lw yielded a linear relationship. The implications of our results on deep ultraviolet (UV) optoelectronic device applications are also discussed.

II–VI / III–V Heterostructures

1987 ◽  
Vol 102 ◽  
Author(s):  
L. A. Kolodziejski ◽  
R. L. Gunshor ◽  
N. Otsuka ◽  
A. V. Nurmikko
Keyword(s):  
Quantum Wells ◽  
Optoelectronic Device ◽  
Substrate Material ◽  
Material System ◽  
Lattice Match ◽  
Molecular Beam Epitaxial ◽  
Gaas Devices ◽  
Recent Developments ◽  
Device Applications ◽  
Common Substrate

ABSTRACTThe integration of several optoelectronic device functions onto a common substrate material is an area which is currently being actively pursued. In an effort to achieve this objective, experiments are under way to examine the epitaxial growth and material properties of a variety of both II–VI and III–V compounds grown on a substrate where the II–VI/III–V heterostructure can be utilized. This paper describes some recent developments involving the molecular beam epitaxial (MBE) growth and characterization of two important II–VI/III–V heterostructures: ZnSe/GaAs and InSb/CdTe;. a comparison is made between epitaxial layer/substrate interfaces and epilayer/epilayer interfaces for both heterostructures. The ZnSe/GaAs heterointerface, having a 0.25% lattice constant mismatch, has potential for use in passivation of GaAs devices. The InSb/CdTe heterointerface possesses an even closer lattice match, ∼0.05% (comparable to the (Al,Ga)As/GaAs material system), and is motivated by possible device applications provided by InSb/CdTe quantum wells.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

In(Ga)N Nanowire Heterostructures and Optoelectronic Device Applications

2011 ◽  
Vol 1 (2) ◽  
pp. 123-139
Author(s):  
Saeed Fathololoumi ◽  
Hieu P. T. Nguyen ◽  
Zetian Mi
Keyword(s):  
Optoelectronic Device ◽  
Nanowire Heterostructures ◽  
Device Applications

In(Ga)N Nanowire Heterostructures and Optoelectronic Device Applications

2011 ◽  
Vol 1 (2) ◽  
pp. 123-139 ◽  
Author(s):  
Saeed Fathololoumi ◽  
Hieu P. T. Nguyen ◽  
Zetian Mi
Keyword(s):  
Optoelectronic Device ◽  
Nanowire Heterostructures ◽  
Device Applications

ε-InSe single crystals grown by a horizontal gradient freeze method

CrystEngComm ◽  
2020 ◽  
Vol 22 (45) ◽  
pp. 7864-7869
Author(s):  
Maojun Sun ◽  
Wei Wang ◽  
Qinghua Zhao ◽  
Xuetao Gan ◽  
Yuanhui Sun ◽  
...  
Keyword(s):  
Single Crystals ◽  
Optoelectronic Device ◽  
Indium Selenide ◽  
Horizontal Gradient ◽  
Device Applications

Indium selenide (InSe) single crystals have been considered as promising candidates for future optical, electrical, and optoelectronic device applications.

Discotic columnar liquid-crystalline polymer semiconducting materials with high charge-carrier mobility via rational macromolecular engineering

2017 ◽  
Vol 8 (21) ◽  
pp. 3286-3293 ◽  
Author(s):  
Bin Mu ◽  
Xingtian Hao ◽  
Jian Chen ◽  
Qian Li ◽  
Chunxiu Zhang ◽  
...  
Keyword(s):  
Liquid Crystalline ◽  
Cost Effective ◽  
Crystalline Polymer ◽  
Charge Carrier Mobility ◽  
Optoelectronic Device ◽  
Side Chain ◽  
Liquid Crystal Polymers ◽  
Semiconducting Materials ◽  
Organic Semiconducting Materials ◽  
Device Applications

Well-prepared side-chain discotic liquid crystal polymers with shorter spacers in ordered columnar phases are fascinating and promising cost-effective, solution-processable organic semiconducting materials for various potential optoelectronic device applications.

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