Strained InAs/InP quantum wells and quantum dots for optoelectronic device applications

1995 ◽  
Author(s):  
Remo A. Masut ◽  
C. A. Tran ◽  
Marc Beaudoin ◽  
Richard Leonelli
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Optoelectronic Device ◽  
Device Applications

Structural and optical properties of AlInAs/InP and GaPSb/InP type II interfaces

1996 ◽  
Vol 74 (5-6) ◽  
pp. 202-208 ◽  
Author(s):  
M. Sacilotti ◽  
P. Abraham ◽  
M. Pitaval ◽  
M. Ambri ◽  
T. Benyattou ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Optoelectronic Device ◽  
Conduction Band Edge ◽  
Type Ii ◽  
Semiconducting Materials ◽  
Band Bending ◽  
Device Applications ◽  
Pl Intensity ◽  
Material Forming

We present a study of type II interfaces between semiconducting materials. In this type of interface the lineup of the two semiconductor band gaps has a staggered shape. The band bending at the interface depends on the doping type and concentration of the two semiconductors involved. In most cases two triangular quantum wells appear at the interface, one for the electrons in the semiconductor having the lowest conduction band edge and one in the other material for holes. In such a case, when charges are injected, the electrons and holes are separated at the interface, so that the electron/hole recombination occurs through the interface. The main characteristic of type II interfaces is that their photoluminescent (PL) intensity is very high compared with each material forming the heterojunction. This high PL intensity can be used advantageously in optoelectronic device applications. We present semiconductor pairs for which it is possible to have type II interfaces and their optical properties. We will emphasize particularly the cases of AlInAs/InP and GaPSb/InP whose low-temperature interface recombination energies are 1.2 and 0.90 eV, respectively.

Masked growth of InGaAsP‐based quantum wells for optoelectronic device applications

1993 ◽  
Vol 62 (14) ◽  
pp. 1641-1643 ◽  
Author(s):  
Y. Chen ◽  
T. H. Chiu ◽  
J. E. Zucker ◽  
S. N. G. Chu
Keyword(s):  
Quantum Wells ◽  
Optoelectronic Device ◽  
Device Applications

InAs Quantum Dots for Optoelectronic Device Applications

2004 ◽  
Vol 829 ◽  
Author(s):  
K. Stewart ◽  
S. Barik ◽  
M. Buda ◽  
H. H. Tan ◽  
C. Jagadish
Keyword(s):  
Quantum Dots ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Optoelectronic Device ◽  
Organic Chemical ◽  
Group V ◽  
Inas Quantum Dots ◽  
Group Iii ◽  
Device Applications ◽  
Metal Organic

ABSTRACTIn this paper we discuss the growth of self-assembled InAs quantum dots (QDs) on both GaAs and InP substrates by low pressure Metal Organic Chemical Vapor Deposition. The influence of various growth parameters, such as the deposition time, the QD overlayer growth temperature, the V/III ratio and the group III and/or group V interdiffusion on QD formation are discussed and compared for the two systems. Stacking issues and preliminary results for an InAs/GaAs QD laser are also presented.

Al rich AlN/AlGaN Quantum Wells

2006 ◽  
Vol 955 ◽  
Author(s):  
Talal Mohammed Ahmad Al tahtamouni ◽  
Neeraj Nepal ◽  
Jingyu Lin ◽  
Hongxing Jiang
Keyword(s):  
Quantum Wells ◽  
Vapor Deposition ◽  
Quantum Confinement ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Optoelectronic Device ◽  
Peak Position ◽  
Emission Efficiency ◽  
Device Applications ◽  
Deep Ultraviolet

ABSTRACTTwo sets of AlN/AlxGa1−xN quantum wells (QW) have been grown by metalorganic chemical vapor deposition (MOCVD). The first set consists of five samples of AlN/AlxGa1−xN QWs with (x ∼ 0.65) with well width, Lw, varying from 1 to 3 nm. The second set consists of four samples of AlN/AlxGa1−xN with (Lw = 1.5 nm) with Al composition, x, varying from 0.70 to 0.85. Low temperature photoluminescence (PL) spectroscopy has been employed to study the Lw dependence of the PL spectral peak position, emission efficiency, and line width. Our results have shown that these AlN/AlGaN QW structures exhibit polarization fields of ∼ 4 MV/cm. Due to effects of quantum confinement and polarization fields, AlN/AlGaN QWs with Lw between 2 and 2.5 nm exhibit the highest quantum efficiency. The dependence of the emission linewidth on Lw yielded a linear relationship. The implications of our results on deep ultraviolet (UV) optoelectronic device applications are also discussed.

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