Control of Solid-Excitation-Based Photochemical Dry Etching of Semiconductors by Ion-Bombardment-Induced Damage

1987 ◽  
Vol 101 ◽  
Author(s):  
C.I.H. Ashby ◽  
D. R. Myers
Keyword(s):  
Ion Implantation ◽  
Doping Concentration ◽  
Ion Bombardment ◽  
Dry Etching ◽  
Excitation Wavelength ◽  
Impurity Doping ◽  
Induced Defects

ABSTRACTCarrier-driven photochemcial dry etching of semiconductors can be selectively suppressed by ion-implantation-induced defects. The magnitude of this suppression depends on the semiconductor impurity doping concentration, the ion fluence, and the photo-excitation wavelength.

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

2002 ◽  
Vol 742 ◽  
Author(s):  
T. Kimoto ◽  
K. Hashimoto ◽  
K. Fujihira ◽  
K. Danno ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Schottky Barrier Diodes ◽  
Homoepitaxial Growth ◽  
Nitrogen Incorporation ◽  
Impurity Doping ◽  
Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

scholarly journals Micromachining of Si 3 N 4 by Ga + -Ion Implantation and Dry Etching

2016 ◽  
Vol 22 (S3) ◽  
pp. 170-171
Author(s):  
Margarita Baluktsian ◽  
Kahraman Keskinbora ◽  
Umut T. Sanli ◽  
Gisela Schütz
Keyword(s):  
Ion Implantation ◽  
Dry Etching

Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices

1989 ◽  
Vol 147 ◽  
Author(s):  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Braunstein ◽  
G. Rajeswaran ◽  
P. Fellinger
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Position ◽  
Compound Semiconductor ◽  
Subsequent Annealing ◽  
Semiconductor Superlattices ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Induced Defects

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

Selective Ion Bombardment for the Control of Laser‐Induced Photochemical Dry Etching of Semiconductors

1989 ◽  
Vol 136 (3) ◽  
pp. 782-785 ◽  
Author(s):  
C. I. H. Ashby ◽  
D. R. Myers ◽  
F. L. Vook
Keyword(s):  
Ion Bombardment ◽  
Dry Etching

Model for the dry etching of heavily dopedn‐type silicon by atomic fluorine in the absence of ion bombardment

1994 ◽  
Vol 75 (11) ◽  
pp. 7507-7513 ◽  
Author(s):  
Masahiko Kojima ◽  
Hisao Kato ◽  
Mitsuru Gatto
Keyword(s):  
Ion Bombardment ◽  
Dry Etching ◽  
Type Silicon ◽  
Atomic Fluorine

Interrogating the effects of ion-implantation-induced defects on the energy storage properties of bulk molybdenum disulphide

2018 ◽  
Vol 20 (44) ◽  
pp. 28232-28240 ◽  
Author(s):  
Patrick V. Mwonga ◽  
Rasmita Barik ◽  
Shunmugam R. Naidoo ◽  
Alex Quandt ◽  
Kenneth I. Ozoemena
Keyword(s):  
Energy Storage ◽  
Ion Implantation ◽  
Molybdenum Disulphide ◽  
Experimental Conditions ◽  
Energy Storage Properties ◽  
Induced Defects ◽  
Storage Properties ◽  
Ion Implanted

Under similar experimental conditions, W-ion-implanted MoS2 exhibits enhanced electrochemistry compared to the Mo-ion-implanted MoS2 counterpart.

The 1200 nm‐Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

2020 ◽  
Vol 217 (10) ◽  
pp. 1900851
Author(s):  
Yu Hiraishi ◽  
Tomohiro Shirai ◽  
Jinkwan Kwoen ◽  
Taisei Ito ◽  
Yuichi Matsushima ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Ion Implantation ◽  
Dry Etching ◽  
Gaas Quantum Dot
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