Selective Ion Bombardment for the Control of Laser‐Induced Photochemical Dry Etching of Semiconductors

1989 ◽  
Vol 136 (3) ◽  
pp. 782-785 ◽  
Author(s):  
C. I. H. Ashby ◽  
D. R. Myers ◽  
F. L. Vook
Keyword(s):  
Ion Bombardment ◽  
Dry Etching

Model for the dry etching of heavily dopedn‐type silicon by atomic fluorine in the absence of ion bombardment

1994 ◽  
Vol 75 (11) ◽  
pp. 7507-7513 ◽  
Author(s):  
Masahiko Kojima ◽  
Hisao Kato ◽  
Mitsuru Gatto
Keyword(s):  
Ion Bombardment ◽  
Dry Etching ◽  
Type Silicon ◽  
Atomic Fluorine

Formation of Individual Holes in Amorphous SiO2by Swift Heavy-Ion Bombardment Followed by Wet and Dry Etching

2000 ◽  
Vol 39 (Part 1, No. 12B) ◽  
pp. 7058-7059 ◽  
Author(s):  
Koichi Awazu ◽  
Satoshi Ishii ◽  
Kunihiro Shima
Keyword(s):  
Ion Bombardment ◽  
Dry Etching ◽  
Heavy Ion ◽  
Swift Heavy Ion

Reduced Time for Uniform Etching of Cu Power Planes during FIB Editing

2003 ◽  
Vol 766 ◽  
Author(s):  
V.V. Makarov ◽  
W.B. Thompson ◽  
T.R. Lundquist
Keyword(s):  
Etch Rate ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Dry Etching ◽  
Reduced Time

AbstractDry etching of Cu challenges the Focused Ion Beam (FIB) removal of metallizations. Cu metallizations are comprised of numerous, randomly orientated crystallites. Each orientation shows a different etch rate under ion bombardment, leading to unacceptable damage to underlying dielectric. An improved methodology for uniform Cu etching over dielectric consists of three steps: 1) Exposure, 2) Initial off-normal bombardment and 3) Chemistry assisted ion bombardment. Comparison is made with and without preliminary off-normal bombardment. It is shown that Cu etching preceded by off-normal bombardment was completed ∼50% sooner with decreased dielectric over-etch.

Control of Solid-Excitation-Based Photochemical Dry Etching of Semiconductors by Ion-Bombardment-Induced Damage

1987 ◽  
Vol 101 ◽  
Author(s):  
C.I.H. Ashby ◽  
D. R. Myers
Keyword(s):  
Ion Implantation ◽  
Doping Concentration ◽  
Ion Bombardment ◽  
Dry Etching ◽  
Excitation Wavelength ◽  
Impurity Doping ◽  
Induced Defects

ABSTRACTCarrier-driven photochemcial dry etching of semiconductors can be selectively suppressed by ion-implantation-induced defects. The magnitude of this suppression depends on the semiconductor impurity doping concentration, the ion fluence, and the photo-excitation wavelength.

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

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