Model for the dry etching of heavily dopedn‐type silicon by atomic fluorine in the absence of ion bombardment

1994 ◽  
Vol 75 (11) ◽  
pp. 7507-7513 ◽  
Author(s):  
Masahiko Kojima ◽  
Hisao Kato ◽  
Mitsuru Gatto
Keyword(s):  
Ion Bombardment ◽  
Dry Etching ◽  
Type Silicon ◽  
Atomic Fluorine

Selective Ion Bombardment for the Control of Laser‐Induced Photochemical Dry Etching of Semiconductors

1989 ◽  
Vol 136 (3) ◽  
pp. 782-785 ◽  
Author(s):  
C. I. H. Ashby ◽  
D. R. Myers ◽  
F. L. Vook
Keyword(s):  
Ion Bombardment ◽  
Dry Etching

Formation of Individual Holes in Amorphous SiO2by Swift Heavy-Ion Bombardment Followed by Wet and Dry Etching

2000 ◽  
Vol 39 (Part 1, No. 12B) ◽  
pp. 7058-7059 ◽  
Author(s):  
Koichi Awazu ◽  
Satoshi Ishii ◽  
Kunihiro Shima
Keyword(s):  
Ion Bombardment ◽  
Dry Etching ◽  
Heavy Ion ◽  
Swift Heavy Ion

Reduced Time for Uniform Etching of Cu Power Planes during FIB Editing

2003 ◽  
Vol 766 ◽  
Author(s):  
V.V. Makarov ◽  
W.B. Thompson ◽  
T.R. Lundquist
Keyword(s):  
Etch Rate ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Dry Etching ◽  
Reduced Time

AbstractDry etching of Cu challenges the Focused Ion Beam (FIB) removal of metallizations. Cu metallizations are comprised of numerous, randomly orientated crystallites. Each orientation shows a different etch rate under ion bombardment, leading to unacceptable damage to underlying dielectric. An improved methodology for uniform Cu etching over dielectric consists of three steps: 1) Exposure, 2) Initial off-normal bombardment and 3) Chemistry assisted ion bombardment. Comparison is made with and without preliminary off-normal bombardment. It is shown that Cu etching preceded by off-normal bombardment was completed ∼50% sooner with decreased dielectric over-etch.

Deep centers introduced by argon ion bombardment in n-type silicon

1981 ◽  
Vol 24 (12) ◽  
pp. 1121-1126 ◽  
Author(s):  
J. Garrido ◽  
E. Calleja ◽  
J. Piqueras
Keyword(s):  
Ion Bombardment ◽  
Deep Centers ◽  
Type Silicon ◽  
Argon Ion Bombardment ◽  
Argon Ion

Control of Solid-Excitation-Based Photochemical Dry Etching of Semiconductors by Ion-Bombardment-Induced Damage

1987 ◽  
Vol 101 ◽  
Author(s):  
C.I.H. Ashby ◽  
D. R. Myers
Keyword(s):  
Ion Implantation ◽  
Doping Concentration ◽  
Ion Bombardment ◽  
Dry Etching ◽  
Excitation Wavelength ◽  
Impurity Doping ◽  
Induced Defects

ABSTRACTCarrier-driven photochemcial dry etching of semiconductors can be selectively suppressed by ion-implantation-induced defects. The magnitude of this suppression depends on the semiconductor impurity doping concentration, the ion fluence, and the photo-excitation wavelength.

Sign in / Sign up

Export Citation Format

Share Document