Deposition of Amorphous Carbon Films by Laser Induced CVD

1987 ◽  
Vol 101 ◽  
Author(s):  
H. Tachibana ◽  
A. Nakaue ◽  
Y. Kavate
Keyword(s):  
Partial Pressure ◽  
Deposition Rate ◽  
Amorphous Carbon ◽  
Cross Sections ◽  
Low Temperatures ◽  
Room Temperature ◽  
Carbon Films ◽  
Auger Analysis ◽  
Amorphous Carbon Films ◽  
Arf Excimer Laser

ABSTRACTAmorphous carbon (a-C) films were prepared by photodissociation of C2H3Cl or CCl4 gas using a pulsed ArF excimer laser (193nm). An increase in the substrate teiperature decreased the deposition rate. For C2H3Cl4 the maximum deposition rate of 10Å/min was attained at a partial pressure of 0.1 Torr and room temperature. In contrast, for CCl4, the maximum deposition rate of 10Å/Min was obtained at a partial pressure of 3 Torr and room temperature. This difference may be attributed to the different absorption cross sections for the two gases. The structural and mechanical properties were leasured. An Auger analysis showed the chlorine content in the a-C film deposited at room temperature to be 1% for C2H3Cl and 8% for CCl4. The Mohs hardnesses of the a-C filis deposited at room teiperature were 7 and 2 for C2H3Cl and CCl4, respectively. It was concluded that both sp2 and sp3 bonds existed between neighboring C atoms at low temperatures, whereas SP2 bond was predominant at temperatures higher than 300°C.

OPTICAL PROPERTIES OF TRIMETHYLBORON AND NITROGEN CODOPED AMORPHOUS CARBON FILMS

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1096-1100 ◽  
Author(s):  
Y. HAYASHI ◽  
S. ISHIKAWA ◽  
T. SOGA ◽  
T. JIMBO ◽  
M. ADACHI ◽  
...  
Keyword(s):  
Optical Properties ◽  
Amorphous Carbon ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Rf Plasma ◽  
Amorphous Carbon Films ◽  
Fabry Perot ◽  
Pl Emission ◽  
Hydrogenated Amorphous

We report on the efficient photoluminescence (PL) and optical properties of hydrogenated amorphous carbon thin films codoped with nitrogen and trimethylboron (TMB) grown by rf plasma-enhanced chemical vapor deposition at room temperature. The study clearly shows the observation of discrete PL emission peaks. The PL intensity of the film deposited with 20 sccm TMB is more than 103 times than that of the film deposited without TMB. The change of optical bandgap and PL emission energy with TMB flow rate are discussed based on sp3 and sp2 C networks. Angular dependence of the PL spectra revealed that the origin of multiple sharp peaks is due to Fabry-Perot cavity interference effect.

Preparation And Properties Of Fluorinated Amorphous Carbon Thin Films By Plasma Enhanced Chemical Vapor Deposition

1995 ◽  
Vol 381 ◽  
Author(s):  
Kazuhiko Endo ◽  
Toru Tatsumi
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Parallel Plate ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Source Power ◽  
Amorphous Carbon Films

AbstractFluorinated amorphous carbon films are proposed as low dielectric constant interlayer dielectrics for ULSI circuits. The films are deposited by plasma enhanced chemical vapor deposition with CH4, CF4 and C2F6 in a parallel-plate rf (13.56 MHz) reactor and a helicon wave reactor. In a parallel-plate reactor, the dielectric constant of the amorphous carbon films deposited with CH4 increases with increase in rf power. Addition of CF4 to CH4 reduces the dielectric constant to 2.1 and raises the deposition rate. However etching reaction occurs with high CF4/CH4 ratios. No film grows with only CF4. XPS measurement reveals that the F atoms are introduced into the amorphous carbon films. Helicon reactor has higher plasma density and is expected to achieve higher deposition rate for productive use. In this reactor, fluorinated amorphous carbon films without hydrogen content can be obtained with only CF4 and C2F6 gases. The growth rate of the films reaches 0.3 μ/min with C2F6 and 0.15 μ/min with CF4 at a source power of 2 kW and a gas flow rate of 100 sccm. With heating up to 300°C in a vacuum for 1 hour, the thickness of the films deposited with C2F6 does not shrink while that of films with CF4 shrinks.

HYDROGENATED AMORPHOUS CARBON FILMS PREPARED BY XeCl EXCIMER PULSED LASER DEPOSITION USING COMPOSITIONAL GRAPHITE AND CAMPHOR TARGET FOR SOLAR CELL APPLICATIONS

2005 ◽  
Vol 19 (11) ◽  
pp. 489-501 ◽  
Author(s):  
M. RUSOP ◽  
X. M. TIAN ◽  
T. SOGA ◽  
T. JIMBO ◽  
M. UMENO
Keyword(s):  
Energy Conversion ◽  
Conversion Efficiency ◽  
Amorphous Carbon ◽  
Room Temperature ◽  
Short Circuit ◽  
Energy Conversion Efficiency ◽  
Carbon Films ◽  
Amorphous Carbon Films ◽  
Hydrogenated Amorphous Carbon ◽  
Hydrogenated Amorphous

Hydrogenated amorphous carbon films ( a - C : H ) were deposited on p -type silicon ( a - C : H / p - Si ) and quartz substrates by excimer laser at room temperature using mixture ratios 1 to 9 and 3 to 7 of camphor to graphite by weight percentages. The presence of hydrogen in the a-C:H films has been confirmed by Fourier transform infrared spectroscopy (FTIR) measurements. The structure and optical properties of a - C : H films were respectively investigated by Raman scattering and UV-visible spectroscopy. The increase of sp 3 sites in the a - C : H films has also been confirmed by the Raman spectra spectroscopy analysis. The increase of the optical band gap with higher camphor percentage in the target was believed to be due to the increase of the sp 3 hybrid forms of carbon arising from camphor incorporation. The formation of a heterojunction between the a - C : H film and Si substrate was confirmed by current–voltage (I–V) measurement. The structure of a - C : H / p - Si cells deposited using mixture ratios 1 to 9 of camphor to graphite by weight percentages showed better photovoltaic characteristics with an open-circuit voltage of 400 mV and short-circuit current density of about 15 mA/cm2 under AM 1.5 (100 mW/cm2 at room temperature) illumination. The energy conversion efficiency and fill factor were found to be approximately 2.1% and 0.38, respectively. The carbon layer contributed to the energy conversion efficiency in the lower wavelength region has been proved by the quantum efficiency measurement.

Photoluminescence in Hydrogenated Amorphous Carbon Films Prepared at Room Temperature

1991 ◽  
Vol 30 (Part 2, No. 9A) ◽  
pp. L1539-L1541 ◽  
Author(s):  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
Toshiro Futagi ◽  
Yasumitsu Ohta ◽  
Hidenori Mimura ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Room Temperature ◽  
Carbon Films ◽  
Amorphous Carbon Films ◽  
Hydrogenated Amorphous Carbon ◽  
Hydrogenated Amorphous

Characterization of Plasma-Deposited Amorphous Carbon Films

1987 ◽  
Vol 98 ◽  
Author(s):  
Wen. L. Hsu ◽  
G. W. Foltz ◽  
F. A. Greulich ◽  
K. F. Mccarty ◽  
G. J. Thomas ◽  
...  
Keyword(s):  
Power Density ◽  
Deposition Rate ◽  
Amorphous Carbon ◽  
Carbon Films ◽  
Average Density ◽  
Rf Discharge ◽  
Amorphous Carbon Films ◽  
Hydrogen Molecules ◽  
Thin Carbon

ABSTRACTThin carbon films of ˜ 600 Å have been deposited on Si <111> wafers by striking an RF discharge in gas mixtures of hydrogen and methane. The deposition rate increased with increasing methane fraction. The peak rate was ˜ 1 Å/sec at an applied power density of 0.4 W cm−2. The films, with an average density of 2.54 gm cm−3, are amorphous in nature but exhibit broad diffraction maxima corresponding to interatcidc spacings of 2.05Å and 1. 15Å. Measurements of hydrogen concentration in the films showed that the hydrogen at. % [H/(H+C)] increased from 30 to 40% as the hydrogen fraction in the feed gas increased. By using a D2-CH4, we were also able to deduce that hydrogen molecules can be a large source of hydrogen trapped in the films.

Sign in / Sign up

Export Citation Format

Share Document