Characterization of Plasma-Deposited Amorphous Carbon Films

1987 ◽  
Vol 98 ◽  
Author(s):  
Wen. L. Hsu ◽  
G. W. Foltz ◽  
F. A. Greulich ◽  
K. F. Mccarty ◽  
G. J. Thomas ◽  
...  

ABSTRACTThin carbon films of ˜ 600 Å have been deposited on Si <111> wafers by striking an RF discharge in gas mixtures of hydrogen and methane. The deposition rate increased with increasing methane fraction. The peak rate was ˜ 1 Å/sec at an applied power density of 0.4 W cm−2. The films, with an average density of 2.54 gm cm−3, are amorphous in nature but exhibit broad diffraction maxima corresponding to interatcidc spacings of 2.05Å and 1. 15Å. Measurements of hydrogen concentration in the films showed that the hydrogen at. % [H/(H+C)] increased from 30 to 40% as the hydrogen fraction in the feed gas increased. By using a D2-CH4, we were also able to deduce that hydrogen molecules can be a large source of hydrogen trapped in the films.

1995 ◽  
Vol 381 ◽  
Author(s):  
Kazuhiko Endo ◽  
Toru Tatsumi

AbstractFluorinated amorphous carbon films are proposed as low dielectric constant interlayer dielectrics for ULSI circuits. The films are deposited by plasma enhanced chemical vapor deposition with CH4, CF4 and C2F6 in a parallel-plate rf (13.56 MHz) reactor and a helicon wave reactor. In a parallel-plate reactor, the dielectric constant of the amorphous carbon films deposited with CH4 increases with increase in rf power. Addition of CF4 to CH4 reduces the dielectric constant to 2.1 and raises the deposition rate. However etching reaction occurs with high CF4/CH4 ratios. No film grows with only CF4. XPS measurement reveals that the F atoms are introduced into the amorphous carbon films. Helicon reactor has higher plasma density and is expected to achieve higher deposition rate for productive use. In this reactor, fluorinated amorphous carbon films without hydrogen content can be obtained with only CF4 and C2F6 gases. The growth rate of the films reaches 0.3 μ/min with C2F6 and 0.15 μ/min with CF4 at a source power of 2 kW and a gas flow rate of 100 sccm. With heating up to 300°C in a vacuum for 1 hour, the thickness of the films deposited with C2F6 does not shrink while that of films with CF4 shrinks.


2008 ◽  
Vol 43 (2) ◽  
pp. 453-462 ◽  
Author(s):  
Manlin Tan ◽  
Jiaqi Zhu ◽  
Jiecai Han ◽  
Wei Gao ◽  
Aiping Liu ◽  
...  

2009 ◽  
Vol 48 (6) ◽  
pp. 065501 ◽  
Author(s):  
Omvir Singh Panwar ◽  
Mohd. Alim Khan ◽  
Mahesh Kumar ◽  
Sonnada Math Shivaprasad ◽  
Bukinakere Subbakrihniah Satyanarayana ◽  
...  

2006 ◽  
Vol 45 (10A) ◽  
pp. 7854-7859 ◽  
Author(s):  
Nobuto Yasui ◽  
Hiroshi Inaba ◽  
Hiromu Chiba ◽  
Xudong Yang ◽  
Shu Ping Lau

1998 ◽  
Author(s):  
M.P. Siegal ◽  
D.R. Tallant ◽  
J.C. Barbour ◽  
P.N. Provencio ◽  
L.J. Martinez-Miranda ◽  
...  

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