XPS Surface Composition Analysis During UV Laser Photodeposition of Al From Tiba on Si (100) Substrates: Direct Observation of the Prenucleation Regime

1987 ◽  
Vol 101 ◽  
Author(s):  
David A. Mantell ◽  
T.E. Orlowski
Keyword(s):  
Laser Processing ◽  
Film Growth ◽  
Surface Composition ◽  
Pulsed Laser ◽  
Composition Analysis ◽  
Uv Laser ◽  
Island Growth ◽  
Photochemical Decomposition ◽  
Xps Study

ABSTRACTAn in situ XPS study is made of the AI film growth from TIBA using an ArF pulsed laser on Si (100) substrates. It is found that the film is formed by the photochemical decomposition of the organometaliic on the surface. A metallic film is formed by island growth. These islands are covered with an organometaliic fragment layer of partially decomposed TIBA. The consequences of these observations toward understanding how laser processing can create prenucleation regions that catalyze film growth at temperatures below standard CVD temperatures are discussed.

XPS study of the surface composition modification of nc-TiC/C nanocomposite films under in situ argon ion bombardment

2011 ◽  
Vol 519 (12) ◽  
pp. 3982-3985 ◽  
Author(s):  
A.A. El Mel ◽  
B. Angleraud ◽  
E. Gautron ◽  
A. Granier ◽  
P.Y. Tessier
Keyword(s):  
Surface Composition ◽  
Ion Bombardment ◽  
Nanocomposite Films ◽  
Composition Modification ◽  
Argon Ion Bombardment ◽  
Xps Study ◽  
Argon Ion

scholarly journals Interface Combinatorial Pulsed Laser Deposition to Enhance Heterostructures Functional Properties

2020 ◽  
Author(s):  
Jérôme Wolfman ◽  
Beatrice Negulescu ◽  
Antoine Ruyter ◽  
Ndioba Niang ◽  
Nazir Jaber
Keyword(s):  
Pulsed Laser Deposition ◽  
Functional Properties ◽  
Film Growth ◽  
Pulsed Laser ◽  
Complex Oxide ◽  
Laser Deposition ◽  
Layer By Layer ◽  
Interface Magnetism ◽  
Tunable Capacitors

In this chapter we will describe a new development of combinatorial pulsed laser deposition (CPLD) which targets the exploration of interface libraries. The idea is to modulate continuously the composition of interfaces on a few atomic layers in order to alter their functional properties. This unique combinatorial synthesis of interfaces is possible due to very specific PLD characteristics. The first one is its well-known ability for complex oxide stoichiometry transfer from the target to the film. The second one is the layer by layer control of thin film growth at the atomic level using in-situ RHEED characterization. The third one relates to the directionality of the ablated plume which allows for selective area deposition on the substrate using a mobile shadow-mask. However PLD also has some limitations and important PLD aspects to be considered for reliable CPLD are reviewed. Multiple examples regarding the control of interface magnetism in magnetic tunnel junctions and energy band and Schottky barrier height tuning in ferroelectric tunable capacitors are presented.

Laser Processing in Silicon Molecular Beam Epitaxy

1981 ◽  
Vol 4 ◽  
Author(s):  
T. De Jong ◽  
L. Smit ◽  
V.V. Korablev ◽  
F.W. Saris
Keyword(s):  
Molecular Beam Epitaxy ◽  
Laser Processing ◽  
Room Temperature ◽  
Molecular Beam ◽  
Pulsed Laser ◽  
Epitaxial Layers ◽  
Epitaxial Silicon ◽  
Temperature Deposition ◽  
Substrate Surfaces

ABSTRACTWe have grown epitaxial silicon films on silicon (100), (110) and (111) oriented substrates, using pulsed ruby laser irradiation as a means to obtain clean, ordered substrate surfaces. On these surfaces epitaxial layers were grown in two ways: I. Rȯom temperature deposition and pulsed laser induced epitaxy of 100–300 nm films was carried out repeatedly, yielding ∼1 μm thick epitaxial layers. II. Low temperature molecular beam epitaxy (M.B.E.), even at 250°C on Si(100),of layers up to 1 μm.Applying the second technique to implanted substrates, we annealed and cleaned arsenic implanted silicon (100) samples in situ, and produced epitaxial overlayers of 100–1000 nm, thus creating a buried n-type channel in silicon.

GaAs Surface Composition Investigation during Al Thin Film Growth Using the CBE Method

2010 ◽  
Vol 307 ◽  
pp. 75-83 ◽  
Author(s):  
Dmitri V. Lioubtchenko ◽  
Tatiana A. Briantseva ◽  
Z.M. Lebedeva ◽  
Tim J. Bullough
Keyword(s):  
Laser Power ◽  
Film Growth ◽  
Surface Composition ◽  
Film Formation ◽  
Film Deposition ◽  
Thin Film Growth ◽  
Gaas Surface ◽  
Al Thin Film ◽  
Composition Changes

GaAs surface composition changes occurring during Al film growth using the CBE method with laser assistance were investigated in situ by means of laser reflectivity. The results were compared with data on precise chemical analyses and X-ray microanalyses carried out after film deposition. It was found that the peculiarity of film formation depended upon the laser power. Physicochemical interactions of the Ga atoms from the GaAs surface, with atoms and molecules from the surrounding media, are determinative reactions at a laser power of 2W. At a power of 0.02W, the laser reflectivity changes were mainly due to reactions with Al. The appearance of “free” Ga and As in the region outside of the laser spot indicated the destruction of GaAs islands weakly connected with the GaAs surface.

In-Situ Optical Diagnostics During Pulsed-Laser Deposition of Magnetoresistive La-Ca-Mn-O Films on Silicon Substrates

1996 ◽  
Vol 441 ◽  
Author(s):  
P.-J. Kung ◽  
J. E. Cosgrove ◽  
K. Kinsella ◽  
D. G. Hamblen
Keyword(s):  
Film Thickness ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Target Surface ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Ft Ir

AbstractDuring pulsed-laser deposition of La0.67Ca0.33MnO3 films on silicon substrates, a system that consists of visible optical-emission spectroscopy (OES) and Fourier transform infrared (FT-IR) spectroscopy is employed to perform in-situ diagnosis of the laser-induced plume and to monitor the substrate temperature and the film thickness. The effects of oxygen pressure, laser fluence, and distance from the target surface on emission spectra were studied. In FT-IR measurements, the slopes of the reflectance versus wavenumber curves were observed to increase with film thickness and hence with time, which provides end-point detection during the film growth. La0.67Ca0.33MnO3 films with (100), (110), and mixed orientations, depending on the substrate temperature, were deposited on yttria-stabilized zirconia (YSZ) buffered Si(100) and Si(111) substrates. In a magnetic field of 5 T, the maximum magnetoresistance (MR) values of 250% at 195 K and 164% at 140 K were observed in the as-deposited (110) and (100) films, respectively.

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