Picosecond Laser Induced Melting: The Dielectric Function of Molten Silicon and Superheating in the Liquid Phase
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ABSTRACTThe complex dielectric function of molten silicon produced after picosecond illumination is found to be well described by a Drude model from 1.1 eV to 3.5 eV. Close to the melting temperature, we obtain ωp = 2.50 1016rad/s and τ = 212 10−18s. Transiently, the liquid temperature can exceed the melting temperature or even the boiling temperature Tb. We observe this transient heating and model it with a relatively simple computer code which includes superheating of the liquid above Tb. These measurements are possible thanks to a novel pump and probe technique.
1986 ◽
Vol 59
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pp. 307-311
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1988 ◽
Vol 23
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pp. 1841-1850
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2017 ◽
Vol 723
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pp. 1026-1031
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2011 ◽
Vol 402
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pp. 249-252
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2005 ◽