scholarly journals Rutherford backscattering spectrometry analysis of InGaAs nanostructures

2019 ◽  
Vol 37 (2) ◽  
pp. 020601 ◽  
Author(s):  
Grazia Laricchiuta ◽  
Wilfried Vandervorst ◽  
Ian Vickridge ◽  
Matej Mayer ◽  
Johan Meersschaut
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Spectrometry Analysis

In Situ Rutherford Backscattering Spectrometry Analysis of Films by Combination with Sputter Etching

1999 ◽  
Vol 16 (10) ◽  
pp. 770-772 ◽  
Author(s):  
Lei Jiang ◽  
Bo Liu ◽  
Zhu-ying Zhou ◽  
Mian-hong He ◽  
Guo-qing Zhao ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Spectrometry Analysis ◽  
Sputter Etching

Rutherford Backscattering Spectrometry Analysis of Shallow Sb-Implanted Si

1988 ◽  
Vol 100 ◽  
Author(s):  
Mark C. Ridgway ◽  
J. L. Whitton ◽  
P. J. Scanlon ◽  
A. A. Naem
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Substrate Surface ◽  
Nitrogen Atmosphere ◽  
Rutherford Backscattering ◽  
Spectrometry Analysis ◽  
Projected Range ◽  
Implantation Damage ◽  
Glancing Angle ◽  
Secondary Ion

ABSTRACTRapid thermal annealing (RTA) of shallow Sb-implanted Si has been studied with Rutherford Backscattering Spectrometry (RBS). Single crystal Si wafers were implanted with Sb at energies of 16, 32 and 48 keV and doses of 5×1014 and 1×1015/cm2. RTA and reference furnace anneals in a nitrogen atmosphere were done to activate the dopant and remove implantation damage. Glancing-angle RBS measurements were used to determine the Sb depth distributions. Dopant profiles obtained with RBS analysis were compared with Secondary Ion Mass Spectrometry results and TRIM code calculations. RBS measurements of the projected range and range straggle did not differ significantly from TRIM code calculations. Following annealing, significant Sb diffusion from the as-implanted peak was apparent. Sb accumulation at the substrate surface was pronounced, especially for furnace-annealed samples.

Glancing Angle X-Ray Analysis of Titanium Copper Compound Formations

1984 ◽  
Vol 40 ◽  
Author(s):  
P. A. Psaras ◽  
D. Gupta
Keyword(s):  
Heat Treatment ◽  
Heat Treatment Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Treatment Temperature ◽  
Rutherford Backscattering ◽  
Copper Compound ◽  
X Ray ◽  
Spectrometry Analysis ◽  
Glancing Angle ◽  
Ideal Stoichiometry

AbstractTitanium copper compound formations have been studied via Seeman Bohlin x-ray diffractometry and Rutherford backscattering spectrometry. The heat treatment temperature range was 350°C to 475°C and th heat treatment times ranged from 0 to 240 minutes. Tetragonal gamma TiCu formed first at ˜350°C and was sequentially followed by orthorhombic TiCu3 at ˜400°C. From Rutherford backscattering spectrometry analysis it was concluded that the second TiCu3 compound deviated from ideal stoichiometry to a nonstoichiometric Ti0.88Cu3.12 composition

scholarly journals Rutherford Backscattering Spectrometry Analysis and Structural Properties of ZnxPb1-xS Thin Films Deposited by Chemical Spray Pyrolysis

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Abiodun E. Adeoye ◽  
Emmanuel Ajenifuja ◽  
Bidini A. Taleatu ◽  
A. Y. Fasasi
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Soda Lime Glass ◽  
Chemical Spray Pyrolysis ◽  
Lead Sulphide ◽  
X Ray ◽  
Spectrometry Analysis ◽  
Chemical Spray

Zinc lead sulphide ternary thin films were prepared by chemical spray pyrolysis on soda lime glass substrates using zinc acetate, lead acetate, and thiourea sources precursor. The films were characterized using Rutherford backscattering (RBS) spectrometry, energy dispersive X-ray (EDX) spectroscopy, scanning electron microscopy (SEM), and X-ray diffractometry (XRD). RBS studies revealed variation in thickness and stoichiometry of the films with respect to compositional substitution between Zn and Pb, thereby giving effective composition ZnxPb1-xS, where x=0, 0.035, 0.069, 0.109, 0.176, and 0.217. Film thickness obtained by length conversion ranged from 81.02 nm to 90.03 nm. Microstructural analyses also indicated that the growth and particle distribution of the films were uniform across substrate’s surface. Diffraction studies showed that the films possess FCC crystalline structure. Crystallite size reduced from 14.28 to 9.8 nm with increase in Zn2+ in the ZnxPb1-xS samples.

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