A study of the initial growth kinetics of the copper‐aluminum thin‐film interface reaction by in situ x‐ray diffraction and Rutherford backscattering analysis

1984 ◽  
Vol 56 (2) ◽  
pp. 293-299 ◽  
Author(s):  
R. A. Hamm ◽  
J. M. Vandenberg
1983 ◽  
Vol 25 ◽  
Author(s):  
R. A. Hamm ◽  
J. M. Vandenberg

X-ray diffraction (XRD) and Rutherford backscattering analysis (RBS) have been used independently to study the interface reaction of copperaluminum thin film couples during in-situ annealing in the temperature range 157°–220°C. For the X-ray studies a high vacuum annealing system was constructed on a Huber-Guinier thin film goniometer base1. This system enabled us to monitor the thin film interface reaction via changes of integrated X-ray intensities during the annealing treatment. RBS analysis was carried out with an existing in-situ heating stage. Using both techniques isothermal annealing experiments were carried out for four different temperatures. For this study 900Å Cu/1600Å Al and 1800Å Cu/3200Å Al thin film couples were prepared by sequential evaporation onto water cooled oxidized <111> silicon and MgO substrates.


1985 ◽  
Vol 54 ◽  
Author(s):  
J. M. Vandenberg

ABSTRACTInterfacial reactions in bimetallic thin films have been studied by in-situ glancing angle X-ray diffraction which enables us to monitor all stages of the interface reaction in the temperature range 35 °-950° C Results are presented on new phase formation in evaporated Ag-Al and Cu-Al thin film couples, sputtered bimetallic Nb-Sn and Nb-Pb films and magnetic alloy films. New phases as well as phase transitions which are not known to exist in the bulk phase diagrams, were observed. These results provided evidence that phases other than those predicted by the first nucleation rule, grow during the initial metal-metal thin film interface reaction.


1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.


2020 ◽  
Vol 53 (4) ◽  
pp. 1163-1166
Author(s):  
Karsten Mesecke ◽  
Winfried Malorny ◽  
Laurence N. Warr

This note describes an autoclave chamber developed and constructed by Anton Paar and its application for in situ experiments under hydrothermal conditions. Reactions of crystalline phases can be studied by successive in situ measurements on a conventional laboratory X-ray diffractometer with Bragg–Brentano geometry at temperatures <483 K and saturated vapour pressure <2 MPa. Variations in the intensity of X-ray diffraction reflections of both reactants and products provide quantitative information for studying the reaction kinetics of both dissolution and crystal growth. Feasibility is demonstrated by studying a cementitious mixture used for autoclaved aerated concrete production. During a period of 5.7 h at 466 K and 1.35 MPa, the crystallization of torbermorite and the partial consumption of quartz were monitored.


2020 ◽  
Vol 13 (5) ◽  
pp. 055501 ◽  
Author(s):  
Hidetoshi Suzuki ◽  
Fumitaro Ishikawa ◽  
Takuo Sasaki ◽  
Masamitu Takahasi

2016 ◽  
Vol 88 (11) ◽  
pp. 1684-1692 ◽  
Author(s):  
Lukas C. Buelens ◽  
Vladimir V. Galvita ◽  
Hilde Poelman ◽  
Christophe Detavernier ◽  
Guy B. Marin

1981 ◽  
Vol 10 ◽  
Author(s):  
J. M. Vandenberg ◽  
F. J. A. Den Broeder ◽  
R. A. Hamm

An in situ annealing X-ray study was applied to Cu-Al thin film couples over a wide range of copper-to-aluminum film ratios. This new technique, which has been previously described for a study on the Au-Al thin film system, enables us to make a temperature-dependent photographic X-ray analysis. The present study indicated that only a limited number of the wide variety of bulk phases form in the Cu-Al thin film interface, while some of these phases in the interface are transient. In the transient stages of the interface reaction, the f.c.c.-ordered phase β-Cu3A1 grows over the entire range of copper-to-aluminum film ratios after the first nucleation of CuA12, indicating a two-step nucleation reaction. On the aluminum-rich side, this phase transforms to a new ordered hexagonal phase β′. It could be interpreted as a superlattice of the metastable hexagonal ω phase occurring in zirconium-based alloys. The end phases are CuA1 and CuAl2.


2014 ◽  
Vol 1645 ◽  
Author(s):  
Romain VAUCHY ◽  
Renaud.C. BELIN ◽  
Anne-Charlotte ROBISSON ◽  
Fiqiri HODAJ

ABSTRACTUranium-plutonium mixed oxides incorporating high amounts of plutonium are considered for future nuclear reactors. For plutonium content higher than 20%, a phase separation occurs, depending on the temperature and on the oxygen stoichiometry. This phase separation phenomenon is still not precisely described, especially at high plutonium content. Here, using an original in situ fast X-ray diffraction device dedicated to radioactive materials, we evidenced a phase separation occurring during rapid cooling from 1773 K to room temperature at the rate of 0.05 and 2 K per second for a (U0.55Pu0.45)O2-x compound under a reducing atmosphere. The results show that the cooling rate does not impact the lattice parameters of the obtained phases at room temperature but their fraction. In addition to their obvious fundamental interest, these results are of utmost importance in the prospect of using uranium-plutonium mixed oxides with high plutonium content as nuclear fuels.


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