Non-contact Corona-Kelvin based Metrology for High-k Dielectric Characterization with an Extension to Micro-Scale Measurement

2006 ◽  
Vol 917 ◽  
Author(s):  
Marshall Wilson ◽  
Dmitriy Marinskiy ◽  
Carlos Almeida ◽  
Joseph N. Kochey ◽  
Anton Byelyayev ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Semiconductor Industry ◽  
Total Charge ◽  
Kelvin Probe ◽  
Processing Application ◽  
Dielectric Characterization ◽  
Micro Scale ◽  
High K ◽  
Corona Charging ◽  
Important Extension

AbstractIn-line monitoring of the electrical properties of high-k dielectrics in logic or memory fab-lines has become increasingly important in the semiconductor industry. Non-contact corona-Kelvin based metrology can be used to affectively monitor in-line key dielectric properties. Furthermore, we present an important extension of this metrology to the micro-scale that allows measurement of dielectric properties on test sites as small as 40μm × 70μm. This is achieved through miniaturization of the corona charging apparatus and of the Kelvin probe without a sacrifice in precision or repeatability. Corona-Kelvin micro-metrology allows for the monitoring of the critical dielectric properties directly on product wafers that can then be returned to the fab-line for continued processing. Application examples are given for dielectric capacitance of advanced dielectrics and for the properties of an oxide-nitride-oxide (ONO) memory structure. In the latter case we demonstrate programming and erasing of the ONO structure realized by corona charging. We also use the measured flatband voltage and total charge to identify the location of the programmed charge at the first SiO2/Si3N4 interface in the ONO structure.

Pioneering Application of Corona Charge-Kelvin Probe Metrology to Noncontact Characterization of In0.53 Ga0.47 As/Al2O3/HfO2 Stack

2014 ◽  
Vol 1691 ◽  
Author(s):  
Alexandre Savtchouk ◽  
John D’Amico ◽  
Marshall Wilson ◽  
Jacek Lagowski ◽  
Wei-E Wang ◽  
...  
Keyword(s):  
High Mobility ◽  
Dielectric Surface ◽  
Differential Capacitance ◽  
Voltage Response ◽  
Induced Voltage ◽  
Kelvin Probe ◽  
Dielectric Characterization ◽  
High K ◽  
Corona Charge

ABSTRACTWe report the first successful application of corona charging noncontact C-V and I-V metrology to interface and dielectric characterization of high-k/III-V structures. The metrology, which has been commonly used in Si IC manufacturing, uses incremental corona charge dosing, ΔQC, on the dielectric surface, and the measurement of surface voltage response, ΔVS, using a Kelvin-probe. Its application to In0.53Ga0.47As with a high-k stack required modifications related to the effects of dielectric trap induced voltage transients. The developed Corona Charge-Kelvin Probe Metrology adopted strictly differential measurements using ΔQC and ΔV, and corresponding differential capacitance rather than measurements based on total global charge, Q, and voltage, V, values.Electrical characterization data including interface trap density, electrical oxide thickness, and dielectric leakage are presented for a sample containing an In0.53 Ga0.47 As channel overlaid with a bilayer (2nm Al2O3/5nm HfO2) dielectric stack that is considered to be very promising for application in performance NFETs with high-mobility channels.

Influence of Ru Dopant on the Dielectric Properties of Zr-doped HfO2 High-k Thin Film

2019 ◽  
Vol 6 (1) ◽  
pp. 121-127 ◽  
Author(s):  
Chen-Han Lin ◽  
Yue Kuo ◽  
Jiang Lu
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
High K

scholarly journals Dielectric characterization of Plasmodium falciparum -infected red blood cells using microfluidic impedance cytometry

2018 ◽  
Vol 15 (147) ◽  
pp. 20180416 ◽  
Author(s):  
C. Honrado ◽  
L. Ciuffreda ◽  
D. Spencer ◽  
L. Ranford-Cartwright ◽  
H. Morgan
Keyword(s):  
Plasmodium Falciparum ◽  
Dielectric Properties ◽  
Red Blood Cells ◽  
Blood Cells ◽  
Time Course ◽  
Fluorescent Protein ◽  
Clear Understanding ◽  
Infection Cycle ◽  
Dielectric Characterization ◽  
Impedance Cytometry

Although malaria is the world's most life-threatening parasitic disease, there is no clear understanding of how certain biophysical properties of infected cells change during the malaria infection cycle. In this article, we use microfluidic impedance cytometry to measure the dielectric properties of Plasmodium falciparum -infected red blood cells ( i- RBCs) at specific time points during the infection cycle. Individual parasites were identified within i- RBCs using green fluorescent protein (GFP) emission. The dielectric properties of cell sub-populations were determined using the multi-shell model. Analysis showed that the membrane capacitance and cytoplasmic conductivity of i- RBCs increased along the infection time course, due to membrane alterations caused by parasite infection. The volume ratio occupied by the parasite was estimated to vary from less than 10% at earlier stages, to approximately 90% at later stages. This knowledge could be used to develop new label-free cell sorting techniques for sample pre-enrichment, improving diagnosis.

scholarly journals Piezoelectric and Dielectric Characterization of MWCNT-Based Nanocomposite Flexible Films

2018 ◽  
Vol 2018 ◽  
pp. 1-15 ◽  
Author(s):  
S. Banerjee ◽  
W. Du ◽  
U. Sundar ◽  
K. A. Cook-Chennault
Keyword(s):  
Dielectric Properties ◽  
Parallel Plate ◽  
Volume Fraction ◽  
Sol Gel ◽  
Deposition Process ◽  
Contact Method ◽  
Dielectric Polarization ◽  
Multiwalled Carbon ◽  
Dielectric Characterization ◽  
Piezoelectric Strain

PZT-epoxy-multiwalled carbon nanotube (MWCNT) flexible thick film actuators were fabricated using a sol-gel and spin coat and deposition process. Films were characterized in terms of their piezoelectric and dielectric properties as a function of MWCNT volume fraction and polarization process. Correlations between surface treatment of the MWCNTs and composite performance were made. The surface morphology and filler distribution were observed with the aid of SEM and TEM images. The volume fraction of PZT was held constant at 30%, and the volume fraction of MWCNTs varied from 1% to 10%. Two forms of dielectric polarization were compared. Corona discharge polarization induced enhanced piezoelectric and dielectric properties by a factor of 10 in comparison to the parallel-plate contact method (piezoelectric strain coefficient and dielectric constant were 0.59 pC/N and 61.81, respectively, for the parallel-plate contact method and 9.22 pC/N and 103.59 for the corona polarization method, respectively). The percolation threshold range was observed to occur at a MWCNT volume fraction range between 5% and 6%.

Dielectric Properties of High-K LTCC Materials

2012 ◽  
pp. 207-214
Author(s):  
Jean-Pierre Ganne ◽  
Michel Pate ◽  
Olivier Durand ◽  
Claude Grattepain
Keyword(s):  
Dielectric Properties ◽  
High K

New Perovskite Nanomaterials and Their Integrations into High-k Dielectrics

2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000072-000077
Author(s):  
Minoru Osada ◽  
Takayoshi Sasaki
Keyword(s):  
Dielectric Properties ◽  
Room Temperature ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Layered Perovskite ◽  
Layer By Layer ◽  
High K ◽  
High K Dielectric ◽  
High Dielectric

We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb2O7) derived from a layered perovskite by exfoliation. Solution-based layer-by-layer assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO3 bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k > 50) for thickness down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielectric properties of perovskite nanosheets with different compositions (LaNb2O7, La0.95Eu0.05Nb2O7, and Eu0.56Ta2O7) in order to study the influence of A- and B-site modifications on dielectric properties.

Broadband Dielectric Characterization of Aluminum Oxide (Al2O3)

2008 ◽  
Vol 5 (1) ◽  
pp. 2-7 ◽  
Author(s):  
Khalid Z. Rajab ◽  
Mira Naftaly ◽  
Edmund H. Linfield ◽  
Juan C. Nino ◽  
Daniel Arenas ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Aluminum Oxide ◽  
Time Domain ◽  
Measurement Techniques ◽  
Thz Spectroscopy ◽  
Dielectric Characterization ◽  
Dielectric Constant And Loss ◽  
Ir Frequencies ◽  
Cofired Ceramics

Applications for low-temperature cofired ceramics (LTCC) and high-temperature cofired ceramics (HTCC) are advancing to higher frequencies. In order to design ceramic microsystems and electronic packages, the electrical properties of materials must be well characterized over a broad frequency range. In this study, the dielectric properties of commercial aluminum oxide (Al2O3) with different glass loadings are characterized using three different measurement techniques: the split-post cavity, terahertz (THz) time-domain spectroscopy, and Fourier transform IR spectroscopy (FTIR). Specifically, the dielectric properties will be characterized from 10 GHz to IR frequencies. A split-post cavity was employed for determination of dielectric properties in the 10 GHz range. A broadband THz spectroscopy technique was used to characterize the specimens using measured time-domain transmission data. The dielectric constant and loss were extracted from the sample's frequency-domain transmission characteristics, providing data between 100 GHz and 2 THz. Additionally, FTIR was used to characterize the samples from ~33 to 3300 cm−1 (~1–100 THz). The measurements from the three techniques are compared, and dielectric constant and loss data will be presented for commercial and experimental ceramic systems from 10 GHz to IR frequencies.

Sign in / Sign up

Export Citation Format

Share Document