Pioneering Application of Corona Charge-Kelvin Probe Metrology to Noncontact Characterization of In0.53 Ga0.47 As/Al2O3/HfO2 Stack

2014 ◽  
Vol 1691 ◽  
Author(s):  
Alexandre Savtchouk ◽  
John D’Amico ◽  
Marshall Wilson ◽  
Jacek Lagowski ◽  
Wei-E Wang ◽  
...  
Keyword(s):  
High Mobility ◽  
Dielectric Surface ◽  
Differential Capacitance ◽  
Voltage Response ◽  
Induced Voltage ◽  
Kelvin Probe ◽  
Dielectric Characterization ◽  
High K ◽  
Corona Charge

ABSTRACTWe report the first successful application of corona charging noncontact C-V and I-V metrology to interface and dielectric characterization of high-k/III-V structures. The metrology, which has been commonly used in Si IC manufacturing, uses incremental corona charge dosing, ΔQC, on the dielectric surface, and the measurement of surface voltage response, ΔVS, using a Kelvin-probe. Its application to In0.53Ga0.47As with a high-k stack required modifications related to the effects of dielectric trap induced voltage transients. The developed Corona Charge-Kelvin Probe Metrology adopted strictly differential measurements using ΔQC and ΔV, and corresponding differential capacitance rather than measurements based on total global charge, Q, and voltage, V, values.Electrical characterization data including interface trap density, electrical oxide thickness, and dielectric leakage are presented for a sample containing an In0.53 Ga0.47 As channel overlaid with a bilayer (2nm Al2O3/5nm HfO2) dielectric stack that is considered to be very promising for application in performance NFETs with high-mobility channels.

Model-Based Corona Charge - Kelvin Probe Characterization of Patterned Structures

2018 ◽  
Vol 85 (6) ◽  
pp. 97-104
Author(s):  
Dmitriy Marinskiy ◽  
Jacek Lagowski
Keyword(s):  
Kelvin Probe ◽  
Model Based ◽  
Patterned Structures ◽  
Corona Charge

Non-contact Corona-Kelvin based Metrology for High-k Dielectric Characterization with an Extension to Micro-Scale Measurement

2006 ◽  
Vol 917 ◽  
Author(s):  
Marshall Wilson ◽  
Dmitriy Marinskiy ◽  
Carlos Almeida ◽  
Joseph N. Kochey ◽  
Anton Byelyayev ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Semiconductor Industry ◽  
Total Charge ◽  
Kelvin Probe ◽  
Processing Application ◽  
Dielectric Characterization ◽  
Micro Scale ◽  
High K ◽  
Corona Charging ◽  
Important Extension

AbstractIn-line monitoring of the electrical properties of high-k dielectrics in logic or memory fab-lines has become increasingly important in the semiconductor industry. Non-contact corona-Kelvin based metrology can be used to affectively monitor in-line key dielectric properties. Furthermore, we present an important extension of this metrology to the micro-scale that allows measurement of dielectric properties on test sites as small as 40μm × 70μm. This is achieved through miniaturization of the corona charging apparatus and of the Kelvin probe without a sacrifice in precision or repeatability. Corona-Kelvin micro-metrology allows for the monitoring of the critical dielectric properties directly on product wafers that can then be returned to the fab-line for continued processing. Application examples are given for dielectric capacitance of advanced dielectrics and for the properties of an oxide-nitride-oxide (ONO) memory structure. In the latter case we demonstrate programming and erasing of the ONO structure realized by corona charging. We also use the measured flatband voltage and total charge to identify the location of the programmed charge at the first SiO2/Si3N4 interface in the ONO structure.

Semiconductor Dopant Profile and Dielectric Characterization with Scanning Capacitance Microscopy

2004 ◽  
Vol 838 ◽  
Author(s):  
J. J. Kopanski
Keyword(s):  
Integrated Circuits ◽  
Optical Pumping ◽  
Differential Capacitance ◽  
Oxide Semiconductor ◽  
Capacitance Measurement ◽  
Dielectric Thin Film ◽  
Scanning Capacitance Microscopy ◽  
Dielectric Characterization ◽  
Bandgap Semiconductors

ABSTRACTScanning capacitance microscopy (SCM) has been commonly used to image dopant gradients in silicon and other semiconductors. As a mobile, high-resolution (to 10 nm) metal-oxide-semiconductor (MOS) probe, SCM also is a non-destructive, contactless tool with which to examine local variations in dielectric thin film quality and local variations in semiconductor substrate properties. Virtually any measurement that can be made with fabricated metal electrodes can also be made with SCM. Two particular applications being pursued are characterization of high-κ dielectric films on silicon for next generation integrated circuits and characterization of native and deposited insulators on wide bandgap semiconductors.Local differential capacitance (ΔC) versus tip bias (Vdc) measurements can be made with SCM using an ac voltage to generate the differential capacitance signal. These measurements differ from conventional C-V measurements due to the 3-D nature of the scanning capacitance microscope tip and the method used to generate the differential capacitance signal. Theoretical predictions and experimental measurements are made of SCM differential capacitance versus dc bias voltage (ΔC-V) curves for MOS capacitors with various levels of fixed and interface traps. The goal of this work is to determine if quantitative interface trap distributions can be made using SCM and if variations in interface density can be observed near defects or device structures. The response of the SCM MOS capacitance measurement to a local electric field stress and optical pumping from the atomic force microscope (AFM) laser will also be discussed.

Microwave dielectric characterization of bulk ferroelectrics

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-113-Pr9-116 ◽  
Author(s):  
C. M. Weil ◽  
R. G. Geyer ◽  
L. Sengupta
Keyword(s):  
Dielectric Characterization ◽  
Microwave Dielectric

scholarly journals Harnessing a Transient Gene Expression System in Nicotiana benthamiana to Explore Plant Agrochemical Transporters

Plants ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 524
Author(s):  
Bingqi Wu ◽  
Zhiting Chen ◽  
Xiaohui Xu ◽  
Ronghua Chen ◽  
Siwei Wang ◽  
...  
Keyword(s):  
Gene Expression ◽  
Transient Expression ◽  
Nicotiana Benthamiana ◽  
Heterologous Gene Expression ◽  
Expression System ◽  
Functional Characterization ◽  
Transient Gene Expression ◽  
High Mobility ◽  
Gene Expression System

Functional characterization of plant agrichemical transporters provided an opportunity to discover molecules that have a high mobility in plants and have the potential to increase the amount of pesticides reaching damage sites. Agrobacterium-mediated transient expression in tobacco is simple and fast, and its protein expression efficiency is high; this system is generally used to mediate heterologous gene expression. In this article, transient expression of tobacco nicotine uptake permease (NtNUP1) and rice polyamine uptake transporter 1 (OsPUT1) in Nicotiana benthamiana was performed to investigate whether this system is useful as a platform for studying the interactions between plant transporters and pesticides. The results showed that NtNUP1 increases nicotine uptake in N. benthamiana foliar discs and protoplasts, indicating that this transient gene expression system is feasible for studying gene function. Moreover, yeast expression of OsPUT1 apparently increases methomyl uptake. Overall, this method of constructing a transient gene expression system is useful for improving the efficiency of analyzing the functions of plant heterologous transporter-encoding genes and revealed that this system can be further used to study the functions of transporters and pesticides, especially their interactions.

scholarly journals Characterization of high mobility group protein levels during spermatogenesis in the rat.

1984 ◽  
Vol 259 (14) ◽  
pp. 8840-8846
Author(s):  
L R Bucci ◽  
W A Brock ◽  
I L Goldknopf ◽  
M L Meistrich
Keyword(s):  
High Mobility ◽  
High Mobility Group ◽  
High Mobility Group Protein ◽  
Protein Levels ◽  
Group Protein
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